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Datasheet> All Categories > Discrete semiconductor> The transistor> FDG327N_NL
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FDG327N_NL

Description
Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size75KB，5 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Environmental Compliance
Download Datasheet Parametric View All

FDG327N_NL Overview

Small Signal Field-Effect Transistor, 1.5A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

FDG327N_NL Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerFairchild
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (Abs) (ID)1.5 A
Maximum drain current (ID)1.5 A
Maximum drain-source on-resistance0.09 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)0.38 W
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON

FDG327N_NL Preview

FDG327N
October 2001
FDG327N
20V N-Channel PowerTrench
®
MOSFET
General Description
This N-Channel MOSFET has been designed
specifically to improve the overall efficiency of DC/DC
converters using either synchronous or conventional
switching PWM controllers. It has been optimized use
in small switching regulators, providing an extremely
low R
DS(ON)
and gate charge (Q
G
) in a small package.
Features
•
1.5 A, 20 V.
R
DS(ON)
= 90 mΩ @ V
GS
= 4.5 V.
R
DS(ON)
= 100 mΩ @ V
GS
= 2.5 V
R
DS(ON)
= 140 mΩ @ V
GS
= 1.8 V
•
Fast switching speed
•
Low gate charge (4.5 nC typical)
•
High performance trench technology for extremely
low R
DS(ON)
•
High power and current handling capability.
Applications
•
DC/DC converter
•
Power management
•
Load switch
S
D
D
G
Pin 1
1
2
D
D
6
5
4
SC70-6
3
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
T
J
, T
STG
Drain-Source Voltage
Gate-Source Voltage
Drain Current
– Continuous
– Pulsed
T
A
=25 C unless otherwise noted
o
Parameter
Ratings
20
±
8
(Note 1a)
Units
V
V
A
W
°C
1.5
6
0.42
0.38
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
Operating and Storage Junction Temperature Range
Thermal Characteristics
R
θJA
R
θJA
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Ambient
(Note 1a)
(Note 1b)
300
333
°C/W
°C/W
Package Marking and Ordering Information
Device Marking
.27
Device
FDG327N
Reel Size
7’’
Tape width
8mm
Quantity
3000 units
©2001
Fairchild Semiconductor Corporation
FDG327N Rev C (W)
FDG327N
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage, Forward
Gate–Body Leakage, Reverse
(Note 2)
Test Conditions
V
GS
= 0 V,
I
D
= 250
µA
Min
20
Typ
Max Units
V
Off Characteristics
I
D
= 250
µA,Referenced
to 25°C
V
DS
= 16 V,
V
GS
= 8 V,
V
GS
= –8 V,
V
GS
= 0 V
V
DS
= 0 V
V
DS
= 0 V
I
D
= 250
µA
12
1
100
–100
mV/°C
µA
nA
nA
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
I
D(on)
g
FS
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
V
DS
= V
GS
,
0.4
0.7
–3
57
66
82
72
1.5
V
mV/°C
I
D
= 250
µA,Referenced
to 25°C
V
GS
= 4.5 V,
V
GS
= 2.5 V,
V
GS
= 1.8 V,
V
GS
= 4.5 V,
V
GS
= 4.5V,
I
D
= 1.5 A
I
D
= 1.4 A
I
D
= 1.2 A
I
D
= 1.5 A, T
J
=125°C
V
DS
= 5 V
90
100
140
115
mΩ
6
9
A
S
V
DS
= 10 V, I
D
= 1.5 A
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V,
f = 1.0 MHz
V
GS
= 0 V
423
87
48
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
6
6.5
14
2
12
13
29
4
6.3
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 1.5 A,
V
GS
= 4.5 V
4.5
0.89
0.95
Drain–Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
V
GS
= 0 V, I
S
= 0.32 A
Voltage
0.32
(Note 2)
A
V
0.75
1.2
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
the drain pins. R
θJC
is guaranteed by design while R
θCA
is determined by the user's board design.
a)
300°C/W when
2
mounted on a 1in pad
of 2 oz copper.
b)
333°C/W when mounted
on a minimum pad of 2 oz
copper.
2.
Pulse Test: Pulse Width < 300µs, Duty Cycle < 2.0%
FDG327N Rev C (W)
FDG327N
Typical Characteristics
16
2
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
V
GS
= 4.5V
3.0V
2.5V
2.0V
1.8
1.6
2.0V
1.4
2.5V
1.2
1
0.8
0
0.5
1
1.5
2
2.5
3
3.5
V
GS
= 1.8V
I
D
, DRAIN CURRENT (A)
12
1.8V
8
3.0V
3.5V
4.5V
4
0
V
DS
, DRAIN-SOURCE VOLTAGE (V)
0
4
8
I
D
, DRAIN CURRENT (A)
12
16
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation with
Drain Current and Gate Voltage.
0.18
R
DS(ON)
, ON-RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 1.5 A
V
GS
= 4.5V
1.4
I
D
= 0.8A
0.14
1.2
0.1
T
A
= 125
o
C
0.06
T
A
= 25 C
0.02
o
1
0.8
0.6
-50
-25
0
25
50
75
100
o
125
150
1
2
3
4
5
T
J
, JUNCTION TEMPERATURE ( C)
V
GS
, GATE TO SOURCE VOLTAGE (V)
Figure 3. On-Resistance Variation
withTemperature.
12
Figure 4. On-Resistance Variation with
Gate-to-Source Voltage.
100
I
S
, REVERSE DRAIN CURRENT (A)
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
9
T
A
=-55 C
o
25 C
125
o
C
o
V
GS
= 0V
10
T
A
= 125
o
C
1
25
o
C
0.1
-55 C
0.01
o
6
3
0.001
0
0.5
1
1.5
2
2.5
V
GS
, GATE TO SOURCE VOLTAGE (V)
0.0001
0
0.2
0.4
0.6
0.8
1
1.2
1.4
V
SD
, BODY DIODE FORWARD VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage Variation
with Source Current and Temperature.
FDG327N Rev C (W)
FDG327N
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
600
I
D
= 1.5A
V
DS
= 5V
10V
500
CAPACITANCE (pF)
15V
C
ISS
400
300
200
C
OSS
100
C
RSS
0
0
2
4
6
f = 1MHz
V
GS
= 0 V
4
3
2
1
0
Q
g
, GATE CHARGE (nC)
0
4
8
12
16
20
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
100
P(pk), PEAK TRANSIENT POWER (W)
10
Figure 8. Capacitance Characteristics.
I
D
, DRAIN CURRENT (A)
10
R
DS(ON)
LIMIT
1ms
10ms
100µs
8
SINGLE PULSE
R
θJA
= 333°C/W
T
A
= 25°C
6
1
V
GS
= 4.5V
SINGLE PULSE
R
θJA
= 333
o
C/W
T
A
= 25 C
0.01
0.1
1
o
100ms
1s
DC
4
0.1
2
10
100
0
0.0000 0.0001
1
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
t
1
, TIME (sec)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
r(t), NORMALIZED EFFECTIVE
TRANSIENT THERMAL RESISTANCE
1
D = 0.5
0.2
R
θJA
(t) = r(t) + R
θJA
R
θJA
= 333°C/W
0.1
0.1
0.05
0.02
0.01
SINGLE PULSE
P(pk
)
t
1
t
2
T
J
- T
A
= P * R
θJA
(t)
Duty Cycle, D = t
1
/ t
2
0.01
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
100
1000
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1b.
Transient thermal response will change depending on the circuit board design.
FDG327N Rev C (W)
TRADEMARKS
The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
ACEx™
Bottomless™
CoolFET™
CROSSVOLT™
DenseTrench™
DOME™
EcoSPARK™
E
2
CMOS
TM
EnSigna
TM
FACT™
FACT Quiet Series™
DISCLAIMER
FAST
®
FASTr™
FRFET™
GlobalOptoisolator™
GTO™
HiSeC™
ISOPLANAR™
LittleFET™
MicroFET™
MicroPak™
MICROWIRE™
OPTOLOGIC™
OPTOPLANAR™
PACMAN™
POP™
Power247™
PowerTrench
®
QFET™
QS™
QT Optoelectronics™
Quiet Series™
SILENT SWITCHER
®
SMART START™
STAR*POWER™
Stealth™
SuperSOT™-3
SuperSOT™-6
SuperSOT™-8
SyncFET™
TinyLogic™
TruTranslation™
UHC™
UltraFET
®
VCX™
STAR*POWER is used under license
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
2. A critical component is any component of a life
systems which, (a) are intended for surgical implant into
support device or system whose failure to perform can
the body, or (b) support or sustain life, or (c) whose
be reasonably expected to cause the failure of the life
failure to perform when properly used in accordance
support device or system, or to affect its safety or
with instructions for use provided in the labeling, can be
effectiveness.
reasonably expected to result in significant injury to the
user.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification
Advance Information
Product Status
Formative or
In Design
Definition
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
Preliminary
First Production
No Identification Needed
Full Production
Obsolete
Not In Production
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
Rev. H4
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