EEWORLDEEWORLDEEWORLD

Part Number

Search

JANSR2N7481U3

Description
RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)
CategoryDiscrete semiconductor    The transistor   
File Size177KB,8 Pages
ManufacturerInternational Rectifier ( Infineon )
Websitehttp://www.irf.com/
Download Datasheet Parametric View All

JANSR2N7481U3 Overview

RADIATION HARDENED POWER MOSFET SURFACE MOUNT (SMD-0.5)

JANSR2N7481U3 Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerInternational Rectifier ( Infineon )
package instructionCHIP CARRIER, R-CBCC-N3
Contacts3
Reach Compliance Codecompli
ECCN codeEAR99
Avalanche Energy Efficiency Rating (Eas)70 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage100 V
Maximum drain current (Abs) (ID)22 A
Maximum drain current (ID)22 A
Maximum drain-source on-resistance0.06 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-CBCC-N3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialCERAMIC, METAL-SEALED COFIRED
Package shapeRECTANGULAR
Package formCHIP CARRIER
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeN-CHANNEL
Maximum power dissipation(Abs)1 W
Maximum pulsed drain current (IDM)88 A
Certification statusNot Qualified
GuidelineMIL-19500/703
surface mountYES
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formNO LEAD
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
transistor applicationsSWITCHING
Transistor component materialsSILICON
PD-93754G
RADIATION HARDENED
POWER MOSFET
SURFACE MOUNT (SMD-0.5)
Product Summary
Part Number Radiation Level
IRHNJ57130
100K Rads (Si)
IRHNJ53130
300K Rads (Si)
IRHNJ54130
500K Rads (Si)
IRHNJ58130
1000K Rads(Si)
R
DS(on)
0.06Ω
0.06Ω
0.06Ω
0.075Ω
I
D
22A*
22A*
22A*
22A*
IRHNJ57130
JANSR2N7481U3
100V, N-CHANNEL
REF: MIL-PRF-19500/703
5

TECHNOLOGY
™
QPL Part Number
JANSR2N7481U3
JANSF2N7481U3
JANSG2N7481U3
JANSH2N7481U3
SMD-0.5
International Rectifier’s R5
TM
technology provides
high performance power MOSFETs for space
applications.These devices have been characterized
for Single Event Effects (SEE) with useful performance
up to an LET of 80 (MeV/(mg/cm
2
)). The combination
of low R
DS(on)
and low gate charge reduces the
power losses in switching applications such as DC
to DC converters and motor control. These devices
retain all of the well established advantages of
MOSFETs such as voltage control, fast switching,
ease of paralleling and temperature stability of
electrical parameters.
Features:
n
n
n
n
n
n
n
n
n
Single Event Effect (SEE) Hardened
Ultra Low R
DS(on)
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Surface Mount
Ceramic Package
Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 12V, TC = 25°C
ID @ VGS = 12V, TC = 100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current
À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Á
Avalanche Current
À
Repetitive Avalanche Energy
À
Peak Diode Recovery dv/dt
Â
Operating Junction
Storage Temperature Range
Pckg. Mounting Surface Temp.
Weight
* Current is limited by package
For footnotes refer to the last page
300 (for 5s)
1.0 (Typical)
22*
16
88
75
0.6
±20
70
22
7.5
1.4
-55 to 150
Pre-Irradiation
Units
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
g
www.irf.com
1
10/27/11
Introduction to Multithreaded Programming in Embedded Systems
Dr. Piotr Romaniuk explains multithreaded programming....
SensorYoung Programming Basics
Regarding the output time of 149
#include "msp430x14x.h" void main(void) { unsigned int i; WDTCTL=WDTPW+WDTHOLD; P5DIR|=0x10; P5SEL=0x10; BCSCTL1&=~XT2OFF; do { IFG1&=~OFIFG; for(i=0xFF;i>0;i--); } while((IFG1&OFIFG)!=0); BCSCTL2|=SE...
wangfei890912 Microcontroller MCU
After burning the kernel and booting up, an error code appears. Please help analyze it.
WinCE NAND Boot v1.00 (nboot1st) Jun 29 2007 16:33:48 In loadboot WinCE NAND Boot v1.00 (nboot2nd) Jun 29 2007 16:36:41 Total Sectors:0x0000e800 Sector addr on NAND: 0x000004a0 TotalSector: 0x0000e800...
liaoyi518 Embedded System
VMI VM1448 0217
I want to ask if there is any information about such a film. I have been looking for it for a whole day but I can't find it. I don't even know what it is used for! I want to use MAX1448 instead, but I...
zyandll123 Embedded System
Design of greenhouse data acquisition system based on MSP430 and CC2530
[p=25, null, left][color=rgb(0, 0, 0)][font=宋体, arial][size=14px]The greenhouse data acquisition system is designed based on MSP430F149 microcontroller as the main control unit and CC2530 as the data ...
fish001 Microcontroller MCU
A 700-line Jpeg image decompression source code
A 700-line source code for decompressing a JPEG image------------------------------------ jpeg2code.exe Prints print.jpg in the current directory to print.txt jpeg2code.cpp Source code of jpeg2code.ex...
ap9805411 MCU

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2374  1003  1482  2530  2295  48  21  30  51  47 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号