7164L25DG datasheet, PDF - EEWORLD Datasheet

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7164L25DG: DescriptionStandard SRAM, 8KX8, 25ns, CMOS, CDIP28, 0.600 INCH, GREEN, CERAMIC, DIP-28; Categorystorage storage; File Size105KB，10 Pages; ManufacturerIDT (Integrated Device Technology); Environmental Compliance

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7164L25DG Overview

Standard SRAM, 8KX8, 25ns, CMOS, CDIP28, 0.600 INCH, GREEN, CERAMIC, DIP-28

7164L25DG Parametric

Parameter Name	Attribute value
Is it lead-free?	Lead free
Is it Rohs certified?	conform to
Maker	IDT (Integrated Device Technology)
Parts packaging code	DIP
package instruction	DIP,
Contacts	28
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum access time	25 ns
JESD-30 code	R-CDIP-T28
JESD-609 code	e3
length	37.211 mm
memory density	65536 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	8192 words
character code	8000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	8KX8
Package body material	CERAMIC, METAL-SEALED COFIRED
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Peak Reflow Temperature (Celsius)	260
Maximum seat height	5.08 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal surface	Matte Tin (Sn)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
Maximum time at peak reflow temperature	30
width	15.24 mm

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CMOS Static RAM

64K (8K x 8-Bit)

Features

Description

IDT7164S

IDT7164L

◆

High-speed address/chip select access time

– Military: 20/25/35/45/55/70/85/100ns (max.)

– Industrial: 20/25ns (max.)

– Commercial: 20/25ns (max.)

Low power consumption

Battery backup operation – 2V data retention voltage

(L Version only)

Produced with advanced CMOS high-performance

technology

Inputs and outputs directly TTL-compatible

Three-state outputs

Available in 28-pin DIP, CERDIP and SOJ

Military product compliant to MIL-STD-883, Class B

The IDT7164 is a 65,536 bit high-speed static RAM organized as 8K

x 8. It is fabricated using high-performance, high-reliability CMOS tech-

nology.

Address access times as fast as 20ns are available and the circuit offers

a reduced power standby mode. When

goes HIGH or CS

goes

LOW, the circuit will automatically go to, and remain in, a low-power stand-

by mode. The low-power (L) version also offers a battery backup data

retention capability at power supply levels as low as 2V.

All inputs and outputs of the IDT7164 are TTL-compatible and

operation is from a single 5V supply, simplifying system designs. Fully

static asynchronous circuitry is used, requiring no clocks or refreshing

for operation.

The IDT7164 is packaged in a 28-pin 300 mil DIP and SOJ and a 28-

pin 600 mil CERDIP.

Military grade product is manufactured in compliance with MIL-STD-

883, Class B, making it ideally suited to military temperature applications

demanding the highest level of performance and reliability.

Functional Block Diagram

ADDRESS

DECODER

65,536 BIT

MEMORY ARRAY

GND

I/O

I/O CONTROL

I/O

CONTROL

LOGIC

2967 drw 01

OCTOBER 2013

DSC-2967/16

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