PD - 95193A
Ignition IGBT
Features
Most Rugged in Industry
Logic-Level Gate Drive
> 6KV ESD Gate Protection
Low Saturation Voltage
High Self-clamped Inductive Switching Energy
Lead-Free
Description
The advanced IGBT process family includes a
MOS gated, N-channel logic level device which
is intended for coil-on-plug automotive ignition
applications and small-engine ignition circuits.
Unique features include on-chip active voltage
clamps between the Gate-Emitter and
Gate-Collector which provide over voltage
protection capability in ignition circuits.
Absolute Maximum Ratings
Parameter
Max
Clamped
20
14
1
10
Clamped
125
54
- 40 to 175
- 40 to 175
6
11.5
IGBT with on-chip Gate-Emitter and Gate-Collector clamps
TERMINAL DIAGRAM
Collector
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
BV
CES =
370V min, 430V max
Gate
R
1
R
2
I
C
@ T
C
= 110°C = 14A
V
CE(on)
typ= 1.2V @7A @25°C
I
L(min)
=11.5A @25°C,L=4.7mH
Emitter
JEDEC TO-263AB
JEDEC TO-262AA
JEDEC TO-220AB
IRGS14C40L
IRGSL14C40L
IRGB14C40L
NOTE: IRGS14C40L is available in tape and reel. Add a suffix of
TRR or TRL to the part number to determine the orientation of the
device in the pocket, i.e, IRGS14C40LTRR or IRGS14C40LTRL.
Unit
V
A
A
mA
Condition
R
G
= 1K
ohm
V
GE
= 5V
V
GE
= 5V
V
CES
I
C
@ T
C
= 25°C
I
C
@ T
C
= 110°C
I
G
I
Gp
V
GE
P
D
@ T
C
= 25°C
T
J
T
STG
V
ESD
I
L
Collector-to-Emitter Voltage
Continuous Collector Current
Continuous Collector Current
Continuous Gate Current
Peak Gate Current
Gate-to-Emitter Voltage
Maximum Power Dissipation
mA t
PK
= 1ms, f = 100Hz
V
W
W
°C
°C
KV C = 100pF, R = 1.5K
ohm
A
L = 4.7mH, T = 25°C
P
D
@ T = 110°C
Maximum Power Dissipation
Operating Junction and
Storage Temperature Range
Electrostatic Voltage
Self-clamped Inductive Switching Current
Thermal Resistance
Parameter
Min
Typ
Max
1.2
40
°C/W
Unit
R
θ
JC
R
θ
JA
Z
θ
JC
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Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
(PCB Mounted, Steady State)
Transient Thermal Impedance, Juction-to-Case (Fig.11)
Page 1
11/19/04
Ignition IGBT
Parameter
BV
CES
Collector-to-Emitter Breakdown Voltage
BV
GES
Gate-to-Emitter Breakdown Voltage
I
CES
Collector-to-Emitter Leakage Current
24
10
28
75
20
30
Min Typ Max
370 400
10
12
15
100
BV
CER
Emitter-to-Collector Breakdown Voltage
R
1
R
2
Gate Series Resistance
Gate-to-Emitter Resistance
430
Unit
V
V
µA
µA
V
ohm
K ohm
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Conditions
R
G
= 1K ohm, I
C
=7A, V
GE
= 0V
I
G
=2m A
R
G
=1K ohm, V
CE
= 250V
R
G
=1K ohm, V
CE
= 250V, T
J
=150°C
I
C
= -10m A
Fig
Off-State Electrical Charasteristics @ T
J
= 25°C
(unless otherwise specified)
On-State Electrical Charasteristics @ T
J
= 25°C
(unless otherwise specified)
Parameter
V
CE(on)
Collector-to-Emitter Saturation
Voltage
Min Typ Max
1.2
1.40
V
1.35 1.55
1.35 1.55
1.5
1.6
V
GE(th)
Gate Threshold Voltage
g
fs
I
C
Transconductance
Collector Current
1.3
0.75
10
20
15
1.8
1.7
1.8
2.2
1.8
19
S
A
V
1.55 1.75
Unit
Conditions
I
C
= 7A, V
GE
= 4.5V
I
C
= 10A, V
GE
= 4.5V
I
C
= 10A, V
GE
= 4.5V, T
C
= -40 C
I
C
= 14A, V
GE
= 5.0V, T
C
= -40 C
I
C
= 14A, V
GE
= 5.0V
o
I
C
= 14A, V
GE
= 5.0V, T
C
=150 C
V
CE
= V
GE
, I
C
= 1 m A, T
C
=25 C
o
V
CE
= V
GE
, I
C
= 1 m A, T
C
=150 C
V
CE
= 25V, I
C
= 10A, T
C
=25 C
V
CE
= 10V, V
GE
= 4.5V
o
o
o
o
Fig
1
2
4
3, 5
8
Switching Characteristics @ T
J
= 25°C
(unless otherwise specified)
Parameter
Q
g
Q
ge
Q
gc
Total Gate charge
Gate - Emitter Charge
Gate - Collector Charge
0.6
1.6
3.7
Min Typ Max
27
2.5
10
0.9
2.8
6
550
100
12
25
I
L
Self-Clamped
Inductive Switching Current
15.5
11.5
16.5
7.5
6
t
SC
Short Circuit Withstand Time
120
µs
A
1.35
4
8.3
825
150
18
pF
µs
nC
Unit
Conditions
I
C
= 10A, V
CE
=12V, V
GE
=5V
I
C
= 10A, V
CE
=12V, V
GE
=5V
I
C
= 10A, V
CE
=12V, V
GE
=5V
V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=14V
V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=14V
V
GE
=5V, R
G
=1K ohm, L=1mH, V
CE
=300V
V
GE
=0V, V
CE
=25V, f=1M H z
V
GE
=0V, V
CE
=25V, f=1M H z
V
GE
=0V, V
CE
=25V, f=1M H z
L=0.7m H, T
C
=25°C
L=2.2m H, T
C
=25°C
L=4.7m H, T
C
=25°C
L=1.5m H, T
C
=150°C
L=4.7m H, T
C
=150°C
L=8.7m H, T
C
=150°C
T
J
=150 C,
V
CC
= 16V, L = 10µH
R
G
= 1K ohm, V
GE
= 5V
14
o
Fig
7
15
12
14
t
d
(on) Turn - on delay time
Rise time
t
r
t
d
(off) Turn - off delay time
C
ies
C
oes
C
res
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
6
9
10
13
14
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Page 2
11/19/04
Ignition IGBT
Fig.9 - Self-clamp Avalance Current vs
Inductance @ 25°C
40
Open-secondary Current (A)
IRGS14C40LPbF
IRGSL14C40LPbF
IRGB14C40LPbF
Fig.10 - Self-clamp Avalance Current
vs Inductance @ 150°C
20
35
Open -seco ndary Cu rren t (A)
18
16
14
12
10
8
6
4
Minimum
Typical
30
25
Typical
20
15
Minimum
10
0
1
2
3
4
5
Inductance (mH)
0
2
4
6
8
Inductance (mH)
10
Fig.11 - Transient Thermal Impedance, Junction-to-Case
10
Thermal Response(Z
thJC
)
1
D = 0.50
0.20
0.10
0.1
0.05
0.02
0.01
P
DM
t
1
t
2
SINGLE PULSE
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t
1
/ t
2
2. Peak T
J
= P
DM
x Z
thJC
+ T
C
0.001
0.01
0.1
1
0.01
0.00001
0.0001
t
1
, Rectangular Pulse Duration (sec)
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11/19/04
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