MG150J2YS1 datasheet, PDF - EEWORLD Datasheet

MG150J2YS1: DescriptionTRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor; CategoryDiscrete semiconductor The transistor; File Size48KB，1 Pages; ManufacturerToshiba Semiconductor; Websitehttp://toshiba-semicon-storage.com/

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MG150J2YS1 Overview

TRANSISTOR 150 A, 600 V, N-CHANNEL IGBT, 2-96A4A, 7 PIN, Insulated Gate BIP Transistor

Parameter Name	Attribute value
Maker	Toshiba Semiconductor
package instruction	FLANGE MOUNT, R-PUFM-X7
Contacts	7
Reach Compliance Code	unknown
Shell connection	ISOLATED
Maximum collector current (IC)	150 A
Collector-emitter maximum voltage	600 V
Configuration	SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
JESD-30 code	R-PUFM-X7
Number of components	2
Number of terminals	7
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Certification status	Not Qualified
surface mount	NO
Terminal form	UNSPECIFIED
Terminal location	UPPER
transistor applications	MOTOR CONTROL
Transistor component materials	SILICON
Nominal off time (toff)	500 ns
Nominal on time (ton)	400 ns

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