D ts e t
aa h e
R c e t r lc r nc
o h se Ee to is
Ma u a t r dCo o e t
n fc u e
mp n n s
R c e tr b a d d c mp n ns ae
o h se rn e
o oet r
ma ua trd u ig ete dewaes
n fcue sn i r i/ fr
h
p rh s d f m te oiia s p l r
uc a e r
o h r n l u pi s
g
e
o R c e tr waes rce td f m
r o h se
fr e rae r
o
te oiia I. Al rce t n ae
h
r nl P
g
l e rai s r
o
d n wi tea p o a o teOC
o e t h p rv l f h
h
M.
P r aetse u igoiia fcoy
at r e td sn r n la tr
s
g
ts p o rmso R c e tr e eo e
e t rga
r o h se d v lp d
ts s lt n t g aa te p o u t
e t oui s o u rne
o
rd c
me t o e c e teOC d t s e t
es r x e d h
M aa h e.
Qu l yOv riw
ai
t
e ve
• IO- 0 1
S 90
•A 92 cr ct n
S 1 0 et ai
i
o
• Qu l e Ma ua trr Ls (
ai d
n fcues it QML MI- R -
) LP F
385
53
•C a sQ Mitr
ls
lay
i
•C a sVS a eL v l
ls
p c ee
• Qu l e S p l r Ls o D sr uos( L )
ai d u pi s it f it b tr QS D
e
i
•R c e trsacic l u pir oD A a d
o h se i
r ia s p l t L n
t
e
me t aln u t a dD A sa d r s
es lid sr n L tn ad .
y
R c e tr lcrnc , L i c mmi e t
o h se Ee t is L C s o
o
tdo
t
s p ligp o u t ta s t f c so r x e t-
u pyn rd cs h t ai y u tme e p ca
s
t n fr u lya daee u loto eoiial
i s o q ai n r q a t h s r n l
o
t
g
y
s p l db id sr ma ua trr.
u pi
e yn ut
y n fcues
T eoiia ma ua trr d ts e t c o a yn ti d c me t e e t tep r r n e
h r n l n fcue’ aa h e a c mp n ig hs o u n r cs h ef ma c
g
s
o
a ds e ic t n o teR c e tr n fcue v rino ti d vc . o h se Ee t n
n p c ai s f h o h se ma ua trd eso f hs e ie R c e tr lcr -
o
o
isg aa te tep r r n eo i s mio d co p o u t t teoiia OE s e ic -
c u rne s h ef ma c ft e c n u tr rd cs o h r n l M p c a
o
s
g
t n .T pc lv le aefr eee c p r o e o l. eti mii m o ma i m rt g
i s ‘y ia’ au s r o rfrn e up s s ny C r n nmu
o
a
r xmu ai s
n
ma b b s do p o u t h rceiain d sg , i lt n o s mpetsig
y e a e n rd c c aa tr t , e in smuai , r a l e t .
z o
o
n
© 2 1 R cetr l t n s LC Al i t R sre 0 1 2 1
0 3 ohs E cr i , L . lRg s eevd 7 1 0 3
e e oc
h
T l r m r, l s v iw wrcl . m
o e n oe p ae it w . e c o
a
e
s
o ec
MCR25D, MCR25M, MCR25N
Preferred Device
Silicon Controlled Rectifiers
Reverse Blocking Thyristors
Designed primarily for half−wave ac control applications, such as
motor controls, heating controls, and power supplies; or wherever
half−wave, silicon gate−controlled devices are needed.
Features
http://onsemi.com
•
•
•
•
•
•
Blocking Voltage to 800 Volts
On-State Current Rating of 25 Amperes RMS
High Surge Current Capability − 300 Amperes
Rugged, Economical TO−220AB Package
Glass Passivated Junctions for Reliability and Uniformity
Minimum and Maximum Values of I
GT
, V
GT
, and I
H
Specified for
Ease of Design
•
High Immunity to dv/dt − 100 V/msec Minimum @ 125°C
•
Pb−Free Packages are Available*
MAXIMUM RATINGS
(T
J
= 25°C unless otherwise noted)
Rating
Peak Repetitive Off−State Voltage (Note 1)
(T
J
= −40 to 125°C, Sine Wave,
50 to 60 Hz, Gate Open)
MCR25D
MCR25M
MCR25N
On-State RMS Current
(180° Conduction Angles; T
C
= 80°C)
Peak Non-repetitive Surge Current
(1/2 Cycle, Sine Wave 60 Hz, T
J
= 125°C)
Circuit Fusing Consideration (t = 8.3 ms)
Forward Peak Gate Power
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Forward Average Gate Power
(t = 8.3 ms, T
C
= 80°C)
Forward Peak Gate Current
(Pulse Width
≤
1.0
ms,
T
C
= 80°C)
Operating Junction Temperature Range
Storage Temperature Range
Symbol
V
DRM,
V
RRM
400
600
800
I
T(RMS)
I
TSM
I
2
t
P
GM
P
G(AV)
I
GM
T
J
T
stg
25
300
373
20.0
0.5
2.0
−40 to +125
−40 to +150
A
A
A
2
sec
W
1
W
A
°C
°C
2
3
4
Value
Unit
V
1
2
3
SCRs
25 AMPERES RMS
400 thru 800 VOLTS
G
A
K
MARKING
DIAGRAM
AY WW
MCR25xG
AKA
TO−220AB
CASE 221A−09
STYLE 3
A
Y
WW
x
G
AKA
= Assembly Location
= Year
= Work Week
= D, M, or N
= Pb−Free Package
= Diode Polarity
PIN ASSIGNMENT
Cathode
Anode
Gate
Anode
ORDERING INFORMATION
Device
MCR25D
MCR25DG
MCR25M
MCR25MG
MCR25N
MCR25NG
Package
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
TO−220AB
TO−220AB
(Pb−Free)
Shipping
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
50 Units / Rail
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Ratings
apply for zero or negative gate voltage; positive gate voltage shall not be
applied concurrent with negative potential on the anode. Blocking voltages
shall not be tested with a constant current source such that the voltage ratings
of the devices are exceeded.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
©
Semiconductor Components Industries, LLC, 2005
Preferred
devices are recommended choices for future use
and best overall value.
1
December, 2005 − Rev. 5
Publication Order Number:
MCR25/D
MCR25D, MCR25M, MCR25N
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance,
Junction−to−Case
Junction−to−Ambient
Symbol
R
qJC
R
qJA
T
L
Value
1.5
62.5
260
Unit
°C/W
°C
Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 10 Seconds
ELECTRICAL CHARACTERISTICS
(T
J
= 25°C unless otherwise noted)
Characteristic
OFF CHARACTERISTICS
Peak Repetitive Forward or Reverse Blocking Current
(V
AK
= Rated V
DRM
or V
RRM
, Gate Open)
ON CHARACTERISTICS
Peak Forward On-State Voltage (Note 2)
(I
TM
= 50 A)
Gate Trigger Current (Continuous dc)
(V
D
= 12 V, R
L
= 100
W)
Gate Trigger Voltage (Continuous dc)
(V
D
= 12 V, R
L
= 100
W)
Holding Current
(V
D
=12 Vdc, Initiating Current = 200 mA, Gate Open)
Latching Current
(V
D
= 12 V, I
G
= 30 mA)
DYNAMIC CHARACTERISTICS
Critical Rate of Rise of Off−State Voltage
(V
D
= 67% of Rated V
DRM
, Exponential Waveform, Gate Open, T
J
= 125°C)
Critical Rate of Rise of On−State Current
(I
PK
= 50 A, Pw = 30
msec,
diG/dt = 1 A/msec, Igt = 50 mA)
2. Indicates Pulse Test: Pulse Width
≤
2.0 ms, Duty Cycle
≤
2%.
dv/dt
di/dt
100
−
250
−
−
50
V/ms
A/ms
V
TM
I
GT
V
GT
I
H
I
L
−
4.0
0.5
5.0
−
−
12
0.67
13
35
1.8
30
1.0
40
80
V
mA
V
mA
mA
T
J
= 25°C
T
J
= 125°C
I
DRM
I
RRM
mA
−
−
−
−
0.01
2.0
Symbol
Min
Typ
Max
Unit
Voltage Current Characteristic of SCR
+ Current
Anode +
V
TM
Symbol
V
DRM
I
DRM
V
RRM
I
RRM
V
TM
I
H
Parameter
Peak Repetitive Off State Forward Voltage
Peak Forward Blocking Current
Peak Repetitive Off State Reverse Voltage
Peak Reverse Blocking Current
Peak On State Voltage
Holding Current
Reverse Blocking Region
(off state)
Reverse Avalanche Region
Anode −
I
RRM
at V
RRM
on state
I
H
+ Voltage
I
DRM
at V
DRM
Forward Blocking Region
(off state)
http://onsemi.com
2
MCR25D, MCR25M, MCR25N
40
I GT, GATE TRIGGER CURRENT (mA)
VGT, GATE TRIGGER VOLTAGE (V)
35
30
25
20
15
10
5
0
−40 −25 −10
5
20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
−40 −25 −10
5
20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
Figure 1. Typical Gate Trigger Current versus
Junction Temperature
Figure 2. Typical Gate Trigger Voltage versus
Junction Temperature
I T , INSTANTANEOUS ON−STATE CURRENT (A)
Typical @ 25°C
Maximum @ 125°C
10
Maximum @ 25°C
R(t) TRANSIENT THERMAL R (NORMALIZED)
100
1
Z
0.1
qJC(t)
+
R
qJC
@
R(t)
1
0.1
0.5
0.9
1.3
1.7
2.1
2.5
2.9
0.01
0.1
1
10
V
T
, INSTANTANEOUS ON−STATE VOLTAGE (VOLTS)
Figure 3. Typical On−State Characteristics
100
t, TIME (ms)
1000
1@10 4
Figure 4. Transient Thermal Response
100
100
IL , LATCHING CURRENT (mA)
I H , HOLDING CURRENT (mA)
10
10
1
−40 −25 −10 5
20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
1
−40 −25 −10
5 20 35 50 65 80 95 110 125
T
J
, JUNCTION TEMPERATURE (°C)
Figure 5. Typical Holding Current versus
Junction Temperature
Figure 6. Typical Latching Current versus
Junction Temperature
http://onsemi.com
3
MCR25D, MCR25M, MCR25N
P(AV), AVERAGE POWER DISSIPATION (WATTS)
130
32
28
24
a
60°
90°
180°
dc
TC , CASE TEMPERATURE (
°
C)
120
a
110
a
= Conduction
Angle
20
a
= Conduction
Angle
16
12
8
4
0
0
a
= 30°
100
dc
a
= 30°
0
60°
90°
180°
20
90
80
2
4
6
8
10 12 14 16
18
I
T(RMS)
, RMS ON−STATE CURRENT (AMPS)
4
6
8
10 12 14 16 18
I
T(AV)
, AVERAGE ON−STATE CURRENT (AMPS)
2
20
Figure 7. Typical RMS Current Derating
Figure 8. On State Power Dissipation
1200
Gate−Cathode Open,
(dv/dt does not depend on RGK)
STATIC dv/dt (V/us)
2500
Gate Cathode Open,
(dv/dt does not depend on RGK)
2000
1000
STATIC dv/dt (V/us)
800
85°C
600
110°C
400
T
J
= 125°C
100°C
1500
V
PK
= 275
1000
V
PK
= 400
V
PK
= 600
500
V
PK
= 800
0
200
0
200
300
400
500
600
700
800
80
85
90
V
PK
, Peak Voltage (Volts)
95
100
105
110
T
J
, Junction Temperature (°C )
115
120
125
Figure 9. Typical Exponential Static dv/dt
Versus Peak Voltage
300
280
260
240
220
200
TJ=125° C f=60 Hz
180
160
1
2
3
4
1 CYCLE
Figure 10. Typical Exponential Static dv/dt
Versus Junction Temperature
I TSM, SURGE CURRENT (AMPS)
5
6
7
NUMBER OF CYCLES
8
9
10
Figure 11. Maximum Non−Repetitive Surge Current
http://onsemi.com
4
京公网安备 11010802033920号
EEWORLD
