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Datasheet> All Categories > Discrete semiconductor> The transistor> FFB3904D87Z
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FFB3904D87Z

Description
Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, SC-70, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size514KB，16 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
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FFB3904D87Z Overview

Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, SC-70, 6 PIN

FFB3904D87Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSC-70
package instructionSMALL OUTLINE, R-PDSO-G6
Contacts6
Reach Compliance Codeunknown
ECCN codeEAR99
Maximum collector current (IC)0.2 A
Collector-emitter maximum voltage40 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)30
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON
Nominal transition frequency (fT)250 MHz

FFB3904D87Z Preview

FFB3904 / FMB3904 / MMPQ3904
FFB3904
E2
B2
C1
FMB3904
C2
E1
C1
E1
MMPQ3904
E2
B2
E3
B3
E4
B4
B1
SC70-6
Mark: .1A
pin #1
C2
B1
E1
pin #1
B1
B2
E2
C2
C1
C3
C2
C4
C4
C3
NOTE: The pinouts are symmetrical; pin 1 and pin
4 are interchangeable. Units inside the carrier can
be of either orientation and will not affect the
functionality of the device.
SuperSOT
-6
Mark: .1A
Dot denotes pin #1
SOIC-16
Mark: MMPQ3904
pin #1
C1
NPN Multi-Chip General Purpose Amplifier
This device is designed as a general purpose amplifier and switch.
The useful dynamic range extends to 100 mA as a switch and to
100 MHz as an amplifier. Sourced from Process 23.
Absolute Maximum Ratings*
Symbol
V
CEO
V
CBO
V
EBO
I
C
T
J
, T
stg
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
T
A
= 25°C unless otherwise noted
Parameter
Value
40
60
6.0
200
-55 to +150
Units
V
V
V
mA
°C
4
Operating and Storage Junction Temperature Range
*
These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
NOTES:
1)
These ratings are based on a maximum junction temperature of 150 degrees C.
2)
These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.
3)
All voltages (V) and currents (A) are negative polarity for PNP transistors.
Thermal Characteristics
Symbol
P
D
R
θJA
T
A
= 25°C unless otherwise noted
Characteristic
Total Device Dissipation
Derate above 25°C
Thermal Resistance, Junction to Ambient
Effective 4 Die
Each Die
FFB3904
300
2.4
415
Max
FMB3904
700
5.6
180
MMPQ3904
1,000
8.0
125
240
Units
mW
mW/°C
°C/W
°C/W
°C/W
1998 Fairchild Semiconductor Corporation
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
Electrical Characteristics
Symbol
Parameter
T
A
= 25°C unless otherwise noted
Test Conditions
Min
Typ
Max Units
OFF CHARACTERISTICS
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
BL
I
CEX
Collector-Emitter Breakdown Voltage
Collector-Base Breakdown Voltage
Emitter-Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
I
C
= 1.0 mA, I
B
= 0
I
C
= 10
µA,
I
E
= 0
I
E
= 10
µA,
I
C
= 0
V
CE
= 30 V, V
EB
= 0
V
CE
= 30 V, V
EB
= 0
40
60
6.0
50
50
V
V
V
nA
nA
ON CHARACTERISTICS*
h
FE
DC Current Gain
I
C
= 0.1 mA, V
CE
= 1.0 V
MMPQ3904
I
C
= 1.0 mA, V
CE
= 1.0 V
MMPQ3904
I
C
= 10 mA, V
CE
= 1.0 V
MMPQ3904
I
C
= 50 mA, V
CE
= 1.0 V
I
C
= 100 mA, V
CE
= 1.0 V
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
I
C
= 10 mA, I
B
= 1.0 mA
I
C
= 50 mA, I
B
= 5.0 mA
40
30
70
50
100
75
60
30
300
V
CE(sat)
V
BE(sat)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
0.65
0.2
0.3
0.85
0.95
V
V
V
V
SMALL SIGNAL CHARACTERISTICS
f
T
C
obo
C
ibo
Current Gain - Bandwidth Product
Output Capacitance
Input Capacitance
(MMPQ3904 only)
I
C
= 10 mA, V
CE
= 20 V,
f = 100 MHz
V
CB
= 5.0 V, I
E
= 0,
f = 140 kHz
V
EB
= 0.5 V, I
C
= 0,
f = 140 kHz
250
4.0
8.0
MHz
pF
pF
*
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
NOTE:
All voltages (V) and currents (A) are negative polarity for PNP transistors.
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
500
400
125 °C
V
CE
= 5V
V
CESAT
- COLLECTOR-EMITTER VOLTAGE (V)
h
FE
- TYP ICAL PULSED CURRE NT GAIN
Typical Pulsed Current Gain
vs Collector Current
Collector-Emitter Saturation
Voltage vs Collector Current
0.15
β
= 10
125 °C
300
25 °C
0.1
25 °C
200
100
0
0.1
- 40 °C
0.05
- 40 °C
1
10
I
C
- COLLECTOR CURRENT (mA)
100
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
100
V
-
BE(ON)
BASE-EMITTER ON VOLTAGE (V)
V
BESAT
- BASE-EMITTER VOLTAGE (V)
Base-Emitter Saturation
Voltage vs Collector Current
1
β
= 10
Base-Emitter ON Voltage vs
Collector Current
1
V
CE
= 5V
0.8
- 40 °C
25 °C
0.8
- 40 °C
25 °C
0.6
125 °C
0.6
125 °C
0.4
4
100
0.4
0.1
I
C
1
10
- COLLECTOR CURRENT (mA)
100
0.2
0.1
1
10
I
C
- COLLECTOR CURRENT (mA)
Collector-Cutoff Current
vs Ambient Temperature
I
CBO
- COLLECTOR CURRENT (nA)
500
CAPACITANCE (pF)
10
Capacitance vs
Reverse Bias Voltage
f = 1.0 MHz
100
10
1
0.1
V
CB
= 30V
5
4
3
2
C obo
C ibo
25
50
75
100
125
T
A
- AMBIENT TEMPERATURE (
°
C)
150
1
0.1
1
10
REVERSE BIAS VOLTAGE (V)
100
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Noise Figure vs Frequency
12
NF - NOISE FIGURE (dB)
10
8
6
4
2
0
0.1
I C = 100
µA,
R S = 500
Ω
Noise Figure vs Source Resistance
12
NF - NOISE FIGURE (dB)
I C = 1.0 mA
I C = 1.0 mA
R S = 200Ω
I C = 50
µA
R S = 1.0 kΩ
I C = 0.5 mA
R S = 200Ω
V
CE
= 5.0V
10
I C = 5.0 mA
8
6
4
2
0
0.1
I C = 50
µA
I C = 100
µA
1
10
f - FREQUENCY (kHz)
100
1
10
R
S
- SOURCE RESISTANCE ( kΩ )
100
Current Gain and Phase Angle
vs Frequency
50
45
40
35
30
25
20
15
10
5
0
P
D
- POWE R DIS SIPATION (W)
h
fe
Power Dissipation vs
Ambient Temperature
0
20
40
60
80
100
120
140
160
180
1000
1
- CURRENT GAIN (dB)
SOIC-16
0.75
SOT-6
θ
- DEGREES
θ
0.5
SC70 -6
0.25
h
V
CE
= 40V
I
C
= 10 mA
1
10
100
f - FREQUENCY (MHz)
fe
0
0
25
50
75
100
TE MPE RATURE (
°
C)
125
150
Turn-On Time vs Collector Current
500
I
B1
= I
B2
=
40V
TIME (nS)
100
15V
t
r @
V
CC
= 3.0V
2.0V
10
t
d @
V
CB
= 0V
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
I
c
10
Rise Time vs Collector Current
500
V
CC
= 40V
t
r
- RISE TIME (ns)
I
B1
= I
B2
=
I
c
10
100
T
J
= 125°C
T
J
= 25°C
10
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
FFB3904 / FMB3904 / MMPQ3904
NPN Multi-Chip General Purpose Amplifier
(continued)
Typical Characteristics
(continued)
Storage Time vs Collector Current
500
t
S
- STORAGE TIME (ns)
T
J
= 25°C
Fall Time vs Collector Current
500
I
B1
= I
B2
=
t
f
- FALL TIME (ns)
T
J
= 125°C
I
c
10
I
B1
= I
B2
=
I
c
10
V
CC
= 40V
100
T
J
= 125°C
100
T
J
= 25°C
10
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
10
5
1
10
I
C
- COLLECTOR CURRENT (mA)
100
Current Gain
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
h
oe
- OUTPUT ADMITTANCE (
µ
mhos)
500
100
Output Admittance
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
h
fe
- CURRENT GAIN
100
10
4
1
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
10
0.1
1
I
C
- COLLECTOR CURRENT (mA)
10
100
h
ie
- INPUT IMPEDANCE (k
Ω
)
h
re
- VOLTAGE FE EDBACK RATIO (x10
4
)
Input Impedance
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
Voltage Feedback Ratio
10
7
5
4
3
2
V
CE
= 10 V
f = 1.0 kHz
T
A
= 25
o
C
10
1
0.1
0.1
_
1
I
C
- COLLECTOR CURRENT (mA)
10
1
0.1
1
I
C
- COLLE CTOR CURRENT (mA)
10
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FFB3904D87Z Related Products

FFB3904D87Z FMB3904D87Z
Description Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, SC-70, 6 PIN Small Signal Bipolar Transistor, 0.2A I(C), 40V V(BR)CEO, 2-Element, NPN, Silicon, SUPERSOT-6
Maker Fairchild Fairchild
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Contacts 6 6
Reach Compliance Code unknown unknown
ECCN code EAR99 EAR99
Maximum collector current (IC) 0.2 A 0.2 A
Collector-emitter maximum voltage 40 V 40 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 30 30
JESD-30 code R-PDSO-G6 R-PDSO-G6
Number of components 2 2
Number of terminals 6 6
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE
Polarity/channel type NPN NPN
Certification status Not Qualified Not Qualified
surface mount YES YES
Terminal form GULL WING GULL WING
Terminal location DUAL DUAL
transistor applications SWITCHING SWITCHING
Transistor component materials SILICON SILICON
Nominal transition frequency (fT) 250 MHz 250 MHz

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