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1SMA4755E3

Description
Zener Diode
CategoryDiscrete semiconductor    diode   
File Size283KB,6 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Download Datasheet Parametric View All

1SMA4755E3 Overview

Zener Diode

1SMA4755E3 Parametric

Parameter NameAttribute value
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
CREAT BY ART
1.0 Watt Surface Mount Silicon Zener Diodes
DO-214AC(SMA)
Features
For surface mounted applications in order to
optimize board space
Low profile package
Built-in strain relief
Glass passivated junction
Low inductance
Typical I
R
less than 1uA above 11V
High temperature soldering guaranteed:
260℃ / 10 seconds at terminals
Meet MSL level 1, per J-STD-020,
LF maximum peak of 260℃
Plastic package has Underwriters
Laboratory Flammability Classification 94V-0
Green compound with suffix "G" on packing
code & prefix "G" on datecode
1SMA4737 - 1SMA200Z
Mechanical Data
Case: Molded plastic over passivated junction
Terminals: Pure tin plated lead free,
solderable per MIL-STD-750, Method 2025
Polarity: Color Band denotes positive end (cathode)
Standard packaging: 12mm tape (EIA-481)
Weight: 0.064 gram
Ordering Information (example)
Part No.
1SMA4737
Package
SMA
Packing
1.8K / 7" REEL
Packing code
R3
Packing code
(Green)
R3G
Maximum Ratings and Electrical Characteristics
Rating at 25
ambient temperature unless otherwise specified.
Parameter
Power Dissipation, R
THJA
<30K/W, T
A
=60℃
Power Dissipation, R
THJA
<100K/W, T
A
=25℃
Non Repetitive Peak Power Dissipation(Note 1)
Non Repetitive Peak Forward Surge Current, 8.3ms
Single Half Sine-wave Superimposed on Rated Load
(JEDEC method)
Operating and Storage Temperature Range
Symbol
P
D
P
D
P
ZSM
I
FSM
T
J
, T
STG
Value
3
1.25
60
10
-55 to +150
Unit
Watts
Watts
Watts
Amps
Note 1: Non Repetitive Peak surge PD Test Condition: tp=100uS sq. pulse, TA=25℃ prior to surge
Version:J13

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