FMMT491-TP-HF datasheet, PDF - EEWORLD Datasheet

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FMMT491-TP-HF: DescriptionSmall Signal Bipolar Transistor, 1A I(C), NPN,; CategoryDiscrete semiconductor The transistor; File Size267KB，3 Pages; ManufacturerMicro Commercial Components (MCC); Environmental Compliance

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FMMT491-TP-HF Overview

Small Signal Bipolar Transistor, 1A I(C), NPN,

FMMT491-TP-HF Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	Micro Commercial Components (MCC)
Reach Compliance Code	compliant
ECCN code	EAR99
Maximum collector current (IC)	1 A
Collector-emitter maximum voltage	60 V
Configuration	SINGLE
Minimum DC current gain (hFE)	100
JESD-30 code	R-PDSO-G3
Humidity sensitivity level	1
Number of components	1
Number of terminals	3
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260
Polarity/channel type	NPN
Maximum power dissipation(Abs)	0.5 W
surface mount	YES
Terminal form	GULL WING
Terminal location	DUAL
Maximum time at peak reflow temperature	10
Transistor component materials	SILICON
Nominal transition frequency (fT)	150 MHz

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MCC

Micro Commercial Components

omponents

20736 Marilla

Street Chatsworth

!"#

$ % !"#

FMMT491

Features

•

Maximum Ratings*

Symbol

CEO

CBO

EBO

tot

STG

Halogen

free available upon request by adding suffix "-HF"

Lead Free Finish/RoHS Compliant ("P" Suffix designates

RoHS Compliant. See ordering information)

Power dissipation: P

=0.5W(T

amb

=25 )

Collector current: I

=1A

Epoxy meets UL 94 V-0 flammability rating

Moisure Sensitivity Level 1

Marking:491

Rating

Collector-Emitter Voltage

Collector-Base Voltage

Emitter-Base Voltage

Collector Current,

Power Dissipation at Tamb=25

Operating Junction Temperature

Storage Temperature

Rating

5.0

1.0

500

-55 to +150

Unit

NPN Silicon Planar

High Performance

Transistor

SOT-23

Electrical Characteristics @ 25

C Unless Otherwise Specified

Symbol

Parameter

Collector-Emitter Breakdown Voltage*

=10mAdc, I

=0)

Collector-Base Breakdown Voltage

=100µAdc, I

=0)

Emitter-Base Breakdown Voltage

=100µAdc, I

=0)

Collector Cutoff Current

=60Vdc, I

=0Vdc)

Emitter Cutoff Current

=4.0Vdc, I

=0)

Collector-Emitter Saturation Voltage*

=500mAdc, I

=50mAdc)

=1Adc, I

=100mAdc)

Base-Emitter Saturation Voltage*

=1Adc, I

=100mAdc)

Base-Emitter Voltage*

=5Vdc, I

=1Adc)

DC Current Gain

=5Vdc, I

=1mAdc)

=5Vdc, I

=500mAdc)*

=5Vdc, I

=1Adc)*

=5Vdc, I

=2Adc)*

Transition Frequency

=50mAdc, V

=10Vdc, f=100MHz)

Output Capacitance

=10Vdc, f=1.0MHz)

Min

Max

Units

OFF CHARACTERISTICS

(BR)CEO

(BR)CBO

(BR)EBO

CBO

EBO

CE(sat)

5.0

---

100

150

---

0.1

0.25

0.5

1.1

---

300

---

Vdc

uAdc

Vdc

DIMENSIONS

INCHES

MIN

MAX

.110

.120

.083

.104

.047

.055

.035

.041

.070

.081

.018

.024

.0005

.0039

.035

.044

.003

.007

.015

.020

MIN

2.80

2.10

1.20

.89

1.78

.45

.013

.89

.085

.37

MAX

3.04

2.64

1.40

1.03

2.05

.60

.100

1.12

.180

.51

NOTE

BE(sat)

Vdc

DIM

Suggested Solder

Pad Layout

.031

.800

.035

.900

---

MHz

.079

2.000

inches

* Measured under pulsed conditions. Pulse width=300us. Duty cycle 2%

.037

.950

.037

.950

Revision:

www.mccsemi.com

of 3

2013/01/01

FMMT491-TP-HF Related Products

	FMMT491-TP-HF	FMMT491-TP
Description	Small Signal Bipolar Transistor, 1A I(C), NPN,	Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, ROHS COMPLIANT, PLASTIC, PACKAGE-3
Is it Rohs certified?	conform to	conform to
Maker	Micro Commercial Components (MCC)	Micro Commercial Components (MCC)
Reach Compliance Code	compliant	compliant
ECCN code	EAR99	EAR99
Maximum collector current (IC)	1 A	1 A
Collector-emitter maximum voltage	60 V	60 V
Configuration	SINGLE	SINGLE
Minimum DC current gain (hFE)	100	100
JESD-30 code	R-PDSO-G3	R-PDSO-G3
Humidity sensitivity level	1	1
Number of components	1	1
Number of terminals	3	3
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	SMALL OUTLINE
Peak Reflow Temperature (Celsius)	260	260
Polarity/channel type	NPN	NPN
Maximum power dissipation(Abs)	0.5 W	0.5 W
surface mount	YES	YES
Terminal form	GULL WING	GULL WING
Terminal location	DUAL	DUAL
Maximum time at peak reflow temperature	10	10
Transistor component materials	SILICON	SILICON
Nominal transition frequency (fT)	150 MHz	150 MHz

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