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Datasheet> All Categories > storage> storage> P4C188L-25LM
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P4C188L-25LM

Description
Standard SRAM, 16KX4, 25ns, CMOS, CQCC22, 0.290 X 0.490 INCH, CERAMIC, LCC-22
Categorystorage    storage   
File Size75KB，8 Pages
ManufacturerPyramid Semiconductor Corporation
Websitehttp://www.pyramidsemiconductor.com/
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P4C188L-25LM Overview

Standard SRAM, 16KX4, 25ns, CMOS, CQCC22, 0.290 X 0.490 INCH, CERAMIC, LCC-22

P4C188L-25LM Parametric

Parameter NameAttribute value
Is it lead-free?Contains lead
Is it Rohs certified?incompatible
MakerPyramid Semiconductor Corporation
Parts packaging codeLCC
package instruction0.290 X 0.490 INCH, CERAMIC, LCC-22
Contacts22
Reach Compliance Codecompliant
ECCN code3A001.A.2.C
Maximum access time25 ns
I/O typeCOMMON
JESD-30 codeR-CQCC-N22
JESD-609 codee0
length12.446 mm
memory density65536 bit
Memory IC TypeSTANDARD SRAM
memory width4
Number of functions1
Number of terminals22
word count16384 words
character code16000
Operating modeASYNCHRONOUS
Maximum operating temperature125 °C
Minimum operating temperature-55 °C
organize16KX4
Output characteristics3-STATE
Package body materialCERAMIC, METAL-SEALED COFIRED
encapsulated codeQCCN
Encapsulate equivalent codeLCC22,.3X.5
Package shapeRECTANGULAR
Package formCHIP CARRIER
Parallel/SerialPARALLEL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
power supply5 V
Certification statusNot Qualified
Maximum seat height2.032 mm
Maximum standby current0.0006 A
Minimum standby current2 V
Maximum slew rate0.155 mA
Maximum supply voltage (Vsup)5.5 V
Minimum supply voltage (Vsup)4.5 V
Nominal supply voltage (Vsup)5 V
surface mountYES
technologyCMOS
Temperature levelMILITARY
Terminal surfaceTIN LEAD
Terminal formNO LEAD
Terminal pitch1.27 mm
Terminal locationQUAD
Maximum time at peak reflow temperatureNOT SPECIFIED
width7.366 mm

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P4C188/188L
P4C188/P4C188L
ULTRA HIGH SPEED 16K x 4
STATIC CMOS RAMS
FEATURES
Full CMOS, 6T Cell
High Speed (Equal Access and Cycle Times)
– 10/12/15/20/25 ns (Commercial)
– 12/15/20/25/35 (Industrial)
– 15/20/25/35/45 ns (Military)
Low Power (Commercial/Military)
– 715 mW Active – 12/15
– 550/660 mW Active – 20/25/35/45
– 193/220 mW Standby (TTL Input)
– 83/110 mW Standby (CMOS Input) P4C188
– 15 mW Standby (CMOS Input)
(P4C188L Military)
Single 5V
±
10% Power Supply
Data Retention with 2.0V Supply
(P4C188L Military)
Three-State Outputs
TTL/CMOS Compatible Outputs
Fully TTL Compatible Inputs
Standard Pinout (JEDEC Approved)
– 22-Pin 300 mil DIP
– 24-Pin 300 mil SOJ
– 22-Pin 290 x 490 mil LCC
DESCRIPTION
The P4C188 and P4C188L are 65,536-bit ultra high speed
static RAMs organized as 16K x 4. The CMOS memories
require no clocks or refreshing and have equal access and
cycle times. Inputs and outputs are fully TTL-compatible.
The RAMs operate from a single 5V±10% tolerance power
supply. With battery backup, data integrity is maintained for
supply voltages down to 2.0V. Current drain is typically 10
µA
from a 2.0V supply.
Access times as fast as 12 nanoseconds are available,
permitting greatly enhanced system speeds. CMOS is
utilized to reduce power consumption to a low 715mW
active, 193mW standby and only 5mW in the P4C188L
version.
The P4C188 and P4C188L are available in 22-pin 300 mil
DIP, 24-pin 300 mil SOJ and 22-pin LCC packages provid-
ing excellent board level densities.
FUNCTIONAL BLOCK DIAGRAM
A
(8)
A
I/O
1
I/O
2
I/O
3
I/O
4
ROW
SELECT
65,536-BIT
MEMORY
ARRAY
PIN CONFIGURATIONS
V
CC
22
1
A
0
A
1
A
2
A
3
A
4
A
5
1
2
3
4
5
6
7
8
9
10
11
22
21
20
19
18
17
16
15
14
13
12
V
CC
A
13
A
12
A
11
A
10
A
9
I/O
4
I/O
3
I/O
2
I/O
1
WE
A
2
A
3
A
4
A
5
A
6
A
7
A
8
2
3
4
5
6
7
8
9
10
11 12
A
13
21
20
19
18
17
16
15
14
13
A
1
A
0
A
12
A
11
A
10
A
9
I/O
4
I/O
3
I/O
2
INPUT
DATA
CONTROL
COLUMN I/O
A
6
A
7
A
8
CE
GND
GND
WE
COLUMN
SELECT
CE
A
(6)
WE
A
DIP (P3, D3)
TOP VIEW
LCC (L3)
TOP VIEW
For SOJ pin configuration, please see Selection Guide Page.
Means Quality, Service and Speed
1Q97
63
I/O
1
CE

P4C188L-25LM Related Products

P4C188L-25LM P4C188L-20DM P4C188L-35DM P4C188L-20LM P4C188L-15LM P4C188L-45DM P4C188L-15DM P4C188L-25DM P4C188L-45LM P4C188L-35LM
Description Standard SRAM, 16KX4, 25ns, CMOS, CQCC22, 0.290 X 0.490 INCH, CERAMIC, LCC-22 Standard SRAM, 16KX4, 20ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 Standard SRAM, 16KX4, 35ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 Standard SRAM, 16KX4, 20ns, CMOS, CQCC22, 0.290 X 0.490 INCH, CERAMIC, LCC-22 Standard SRAM, 16KX4, 15ns, CMOS, CQCC22, 0.290 X 0.490 INCH, CERAMIC, LCC-22 Standard SRAM, 16KX4, 45ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 Standard SRAM, 16KX4, 15ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 Standard SRAM, 16KX4, 25ns, CMOS, CDIP22, 0.300 INCH, CERDIP-22 Standard SRAM, 16KX4, 45ns, CMOS, CQCC22, 0.290 X 0.490 INCH, CERAMIC, LCC-22 Standard SRAM, 16KX4, 35ns, CMOS, CQCC22, 0.290 X 0.490 INCH, CERAMIC, LCC-22
Is it lead-free? Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead Contains lead
Is it Rohs certified? incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible incompatible
Parts packaging code LCC DIP DIP LCC LCC DIP DIP DIP LCC LCC
package instruction 0.290 X 0.490 INCH, CERAMIC, LCC-22 DIP, DIP22,.3 DIP, DIP22,.3 QCCN, LCC22,.3X.5 QCCN, LCC22,.3X.5 DIP, DIP22,.3 0.300 INCH, CERDIP-22 0.300 INCH, CERDIP-22 0.290 X 0.490 INCH, CERAMIC, LCC-22 0.290 X 0.490 INCH, CERAMIC, LCC-22
Contacts 22 22 22 22 22 22 22 22 22 22
Reach Compliance Code compliant compliant compliant compliant compliant compliant compliant compliant compliant compli
ECCN code 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C 3A001.A.2.C
Maximum access time 25 ns 20 ns 35 ns 20 ns 15 ns 45 ns 15 ns 25 ns 45 ns 35 ns
I/O type COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON COMMON
JESD-30 code R-CQCC-N22 R-GDIP-T22 R-GDIP-T22 R-CQCC-N22 R-CQCC-N22 R-GDIP-T22 R-GDIP-T22 R-GDIP-T22 R-CQCC-N22 R-CQCC-N22
JESD-609 code e0 e0 e0 e0 e0 e0 e0 e0 e0 e0
length 12.446 mm 27.559 mm 27.559 mm 12.446 mm 12.446 mm 27.559 mm 27.559 mm 27.559 mm 12.446 mm 12.446 mm
memory density 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bit 65536 bi
Memory IC Type STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM STANDARD SRAM
memory width 4 4 4 4 4 4 4 4 4 4
Number of functions 1 1 1 1 1 1 1 1 1 1
Number of terminals 22 22 22 22 22 22 22 22 22 22
word count 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words 16384 words
character code 16000 16000 16000 16000 16000 16000 16000 16000 16000 16000
Operating mode ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS ASYNCHRONOUS
Maximum operating temperature 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C 125 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
organize 16KX4 16KX4 16KX4 16KX4 16KX4 16KX4 16KX4 16KX4 16KX4 16KX4
Output characteristics 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE 3-STATE
Package body material CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, GLASS-SEALED CERAMIC, METAL-SEALED COFIRED CERAMIC, METAL-SEALED COFIRED
encapsulated code QCCN DIP DIP QCCN QCCN DIP DIP DIP QCCN QCCN
Encapsulate equivalent code LCC22,.3X.5 DIP22,.3 DIP22,.3 LCC22,.3X.5 LCC22,.3X.5 DIP22,.3 DIP22,.3 DIP22,.3 LCC22,.3X.5 LCC22,.3X.5
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form CHIP CARRIER IN-LINE IN-LINE CHIP CARRIER CHIP CARRIER IN-LINE IN-LINE IN-LINE CHIP CARRIER CHIP CARRIER
Parallel/Serial PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL PARALLEL
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
power supply 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
Certification status Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified Not Qualified
Maximum seat height 2.032 mm 5.715 mm 5.715 mm 2.032 mm 2.032 mm 5.715 mm 5.715 mm 5.715 mm 2.032 mm 2.032 mm
Maximum standby current 0.0006 A 0.0006 A 0.0006 A 0.0006 A 0.0006 A 0.0006 A 0.0006 A 0.0006 A 0.0006 A 0.0006 A
Minimum standby current 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V 2 V
Maximum slew rate 0.155 mA 0.16 mA 0.15 mA 0.16 mA 0.17 mA 0.145 mA 0.17 mA 0.155 mA 0.145 mA 0.15 mA
Maximum supply voltage (Vsup) 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V 5.5 V
Minimum supply voltage (Vsup) 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V 4.5 V
Nominal supply voltage (Vsup) 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V 5 V
surface mount YES NO NO YES YES NO NO NO YES YES
technology CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS CMOS
Temperature level MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY MILITARY
Terminal surface TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD TIN LEAD
Terminal form NO LEAD THROUGH-HOLE THROUGH-HOLE NO LEAD NO LEAD THROUGH-HOLE THROUGH-HOLE THROUGH-HOLE NO LEAD NO LEAD
Terminal pitch 1.27 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm 2.54 mm 2.54 mm 2.54 mm 1.27 mm 1.27 mm
Terminal location QUAD DUAL DUAL QUAD QUAD DUAL DUAL DUAL QUAD QUAD
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
width 7.366 mm 7.62 mm 7.62 mm 7.366 mm 7.366 mm 7.62 mm 7.62 mm 7.62 mm 7.366 mm 7.366 mm
Maker Pyramid Semiconductor Corporation - - - Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation Pyramid Semiconductor Corporation

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