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SMBJ64-W

Description
Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size36KB,5 Pages
ManufacturerRectron Semiconductor
Websitehttp://www.rectron.com/
Environmental Compliance  
Download Datasheet Parametric View All

SMBJ64-W Overview

Trans Voltage Suppressor Diode, 600W, Unidirectional, 1 Element, Silicon, DO-214AA, PLASTIC PACKAGE-2

SMBJ64-W Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRectron Semiconductor
Parts packaging codeDO-214AA
package instructionPLASTIC PACKAGE-2
Contacts2
Reach Compliance Codenot_compliant
ECCN codeEAR99
Maximum breakdown voltage86.9 V
Minimum breakdown voltage71.1 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AA
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Maximum non-repetitive peak reverse power dissipation600 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)265
polarityUNIDIRECTIONAL
Maximum power dissipation5 W
Certification statusNot Qualified
surface mountYES
technologyAVALANCHE
Terminal surfaceMatte Tin (Sn)
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED
RECTRON
SEMICONDUCTOR
TECHNICAL SPECIFICATION
TVS
TFMBJ
SERIES
SURFACE MOUNT GPP
GPP TRANSIENT VOLTAGE SUPPRESSOR
600 WATT PEAK POWER 5.0 WATTS STEADY STATE
FEATURES
*
*
*
*
*
*
Plastic package has underwriters laboratory
Glass passivated chip construction
600 watt surage capability at 1ms
Excellent clamping capability
Low zener impedance
Fast response time
DO-214AA
0.083 (2.11)
0.077 (1.96)
0.180 (4.57)
0.160 (4.06)
0.155 (3.94)
0.130 (3.30)
Ratings at 25 C ambient temperature unless otherwise specified.
o
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
o
0.096 (2.44)
0.084 (2.13)
0.060 (1.52)
0.030 (0.76)
0.220 (5.59)
0.205 (5.21)
0.012 (0.305)
0.006 (0.152)
0.008 (0.203)
0.004 (0.102)
Dimensions in inches and (millimeters)
DEVICES FOR BIPOLAR APPLICATIONS
For Bidirectional use C or CA suffix for types TFMBJ5.0 thru TFMBJ170
Electrical characteristics apply in both direction
MAXIMUM RATINGS
(At T
A
= 25 C unless otherwise noted)
RATINGS
Peak Power Dissipation with a 10/1000uS (Note 1,2, Fig.1)
Peak Pulse Current with a 10/1000uS waveform ( Note 1, Fig.3 )
Steady State Power Dissipation at T
L
= 75 C (Note 2)
Peak Forward Surge Current 8.3mS single half sine-wave
superimposed on rated load (JEDEC method) (Note 2,3)
unidirectional only
Maximum Instantaneous Forward Voltage at 50A for unidirectional
only (Note 3,4)
Operating and Storage Temperature Range
o
o
SYMBOL
P
PPM
I
PPM
P
M
(AV)
I
FSM
VALUE
Minimum 600
SEE TABLE 1
5.0
100
UNITS
Watts
Amps
Watts
Amps
V
F
T
J
, T
STG
SEE NOTE 4
-55 to + 150
Volts
0
C
2002-12
NOTES : 1. Non-repetitive current pulse, per Fig.3 and derated above T
A
= 25
o
C per Fig.2.
2. Mounted on 0.2 X 0.2”( 5.0 X 5.0mm ) copper pad to each terminal.
3. Lead temperature at T
L
= 25
o
C
4. Measured on 8.3mS single half sine-wave duty cycle = 4 pules per minute maximum.
5. V
F
= 3.5V on TFMBJ-5.0 thru TFMBJ-90 devices and V
F
= 5.0V on TFMBJ-100 thru TFMBJ-170 devices.
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