APT1002RBNR datasheet, PDF - EEWORLD Datasheet

APT1002RBNR: Description7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD; CategoryDiscrete semiconductor The transistor; File Size82KB，2 Pages; ManufacturerMicrosemi; Websitehttps://www.microsemi.com

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APT1002RBNR Overview

7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Microsemi
package instruction	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown
Avalanche Energy Efficiency Rating (Eas)	800 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V
Maximum drain current (Abs) (ID)	7 A
Maximum drain current (ID)	7 A
Maximum drain-source on-resistance	2 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247AD
JESD-30 code	R-PSFM-T3
JESD-609 code	e0
Number of components	1
Number of terminals	3
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	FLANGE MOUNT
Polarity/channel type	N-CHANNEL
Maximum power consumption environment	240 W
Maximum power dissipation(Abs)	240 W
Maximum pulsed drain current (IDM)	28 A
Certification status	Not Qualified
surface mount	NO
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal location	SINGLE
Transistor component materials	SILICON

	APT1002RBNR	APT1002R4BNR
Description	7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD	6.5A, 1000V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Is it Rohs certified?	incompatible	incompatible
Maker	Microsemi	Microsemi
package instruction	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown
Avalanche Energy Efficiency Rating (Eas)	800 mJ	800 mJ
Shell connection	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	1000 V	1000 V
Maximum drain current (Abs) (ID)	7 A	6.5 A
Maximum drain current (ID)	7 A	6.5 A
Maximum drain-source on-resistance	2 Ω	2.4 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code	TO-247AD	TO-247AD
JESD-30 code	R-PSFM-T3	R-PSFM-T3
JESD-609 code	e0	e0
Number of components	1	1
Number of terminals	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR
Package form	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL
Maximum power consumption environment	240 W	240 W
Maximum power dissipation(Abs)	240 W	240 W
Maximum pulsed drain current (IDM)	28 A	26 A
Certification status	Not Qualified	Not Qualified
surface mount	NO	NO
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE
Transistor component materials	SILICON	SILICON

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