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APT1002R4BNR

Description
6.5A, 1000V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
CategoryDiscrete semiconductor    The transistor   
File Size82KB,2 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
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APT1002R4BNR Overview

6.5A, 1000V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD

APT1002R4BNR Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerMicrosemi
package instructionFLANGE MOUNT, R-PSFM-T3
Reach Compliance Codeunknown
Avalanche Energy Efficiency Rating (Eas)800 mJ
Shell connectionDRAIN
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage1000 V
Maximum drain current (Abs) (ID)6.5 A
Maximum drain current (ID)6.5 A
Maximum drain-source on-resistance2.4 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JEDEC-95 codeTO-247AD
JESD-30 codeR-PSFM-T3
JESD-609 codee0
Number of components1
Number of terminals3
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Polarity/channel typeN-CHANNEL
Maximum power consumption environment240 W
Maximum power dissipation(Abs)240 W
Maximum pulsed drain current (IDM)26 A
Certification statusNot Qualified
surface mountNO
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Transistor component materialsSILICON

APT1002R4BNR Related Products

APT1002R4BNR APT1002RBNR
Description 6.5A, 1000V, 2.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD 7A, 1000V, 2ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AD
Is it Rohs certified? incompatible incompatible
Maker Microsemi Microsemi
package instruction FLANGE MOUNT, R-PSFM-T3 FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code unknown unknown
Avalanche Energy Efficiency Rating (Eas) 800 mJ 800 mJ
Shell connection DRAIN DRAIN
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 1000 V 1000 V
Maximum drain current (Abs) (ID) 6.5 A 7 A
Maximum drain current (ID) 6.5 A 7 A
Maximum drain-source on-resistance 2.4 Ω 2 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JEDEC-95 code TO-247AD TO-247AD
JESD-30 code R-PSFM-T3 R-PSFM-T3
JESD-609 code e0 e0
Number of components 1 1
Number of terminals 3 3
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR
Package form FLANGE MOUNT FLANGE MOUNT
Polarity/channel type N-CHANNEL N-CHANNEL
Maximum power consumption environment 240 W 240 W
Maximum power dissipation(Abs) 240 W 240 W
Maximum pulsed drain current (IDM) 26 A 28 A
Certification status Not Qualified Not Qualified
surface mount NO NO
Terminal surface Tin/Lead (Sn/Pb) Tin/Lead (Sn/Pb)
Terminal form THROUGH-HOLE THROUGH-HOLE
Terminal location SINGLE SINGLE
Transistor component materials SILICON SILICON
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