1650V, SILICON, RECTIFIER DIODE
| Parameter Name | Attribute value |
| Maker | NXP |
| package instruction | O-LADB-W2 |
| Reach Compliance Code | unknown |
| ECCN code | EAR99 |
| application | GENERAL PURPOSE |
| Shell connection | ISOLATED |
| Configuration | SINGLE |
| Diode component materials | SILICON |
| Diode type | RECTIFIER DIODE |
| JESD-30 code | O-LADB-W2 |
| Maximum non-repetitive peak forward current | 50 A |
| Number of components | 1 |
| Phase | 1 |
| Number of terminals | 2 |
| Package body material | GLASS |
| Package shape | ROUND |
| Package form | DISK BUTTON |
| Certification status | Not Qualified |
| Maximum repetitive peak reverse voltage | 1650 V |
| Maximum reverse recovery time | 1 µs |
| surface mount | NO |
| Terminal form | WIRE |
| Terminal location | AXIAL |
| BY228/50 | BY228/41 | BY228/40 | BY228/21 | BY228/31 | BY228/33 | BY228/20 | BY228/30 | |
|---|---|---|---|---|---|---|---|---|
| Description | 1650V, SILICON, RECTIFIER DIODE | DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode | DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode |
| package instruction | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 |
| Reach Compliance Code | unknown | unknown | unknown | unknown | unknown | unknown | unknown | unknown |
| ECCN code | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 | EAR99 |
| application | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE | GENERAL PURPOSE |
| Shell connection | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED | ISOLATED |
| Configuration | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE | SINGLE |
| Diode component materials | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON | SILICON |
| Diode type | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE | RECTIFIER DIODE |
| JESD-30 code | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 | O-LADB-W2 |
| Maximum non-repetitive peak forward current | 50 A | 50 A | 50 A | 50 A | 50 A | 50 A | 50 A | 50 A |
| Number of components | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Phase | 1 | 1 | 1 | 1 | 1 | 1 | 1 | 1 |
| Number of terminals | 2 | 2 | 2 | 2 | 2 | 2 | 2 | 2 |
| Package body material | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS | GLASS |
| Package shape | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND | ROUND |
| Package form | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON | DISK BUTTON |
| Certification status | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified | Not Qualified |
| Maximum repetitive peak reverse voltage | 1650 V | 1650 V | 1650 V | 1650 V | 1650 V | 1650 V | 1650 V | 1650 V |
| Maximum reverse recovery time | 1 µs | 1 µs | 1 µs | 1 µs | 1 µs | 1 µs | 1 µs | 1 µs |
| surface mount | NO | NO | NO | NO | NO | NO | NO | NO |
| Terminal form | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE | WIRE |
| Terminal location | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL | AXIAL |
| Maker | NXP | NXP | NXP | - | NXP | NXP | NXP | NXP |