BY228/21 datasheet, PDF - EEWORLD Datasheet

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BY228/21: DescriptionDIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode; CategoryDiscrete semiconductor diode; File Size113KB，5 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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BY228/21 Overview

DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode

BY228/21 Parametric

Parameter Name	Attribute value
package instruction	O-LADB-W2
Reach Compliance Code	unknown
ECCN code	EAR99
Other features	LOW LEAKAGE CURRENT
application	GENERAL PURPOSE
Shell connection	ISOLATED
Configuration	SINGLE
Diode component materials	SILICON
Diode type	RECTIFIER DIODE
JESD-30 code	O-LADB-W2
Maximum non-repetitive peak forward current	50 A
Number of components	1
Phase	1
Number of terminals	2
Package body material	GLASS
Package shape	ROUND
Package form	DISK BUTTON
Certification status	Not Qualified
Maximum repetitive peak reverse voltage	1650 V
Maximum reverse recovery time	1 µs
surface mount	NO
Terminal form	WIRE
Terminal location	AXIAL
Base Number Matches	1

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BY228/21 Related Products

	BY228/21	BY228/41	BY228/40	BY228/31	BY228/33	BY228/20	BY228/30	BY228/50
Description	DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode	DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode	DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode	DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode	DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode	DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode	DIODE 1650 V, SILICON, RECTIFIER DIODE, Rectifier Diode	1650V, SILICON, RECTIFIER DIODE
package instruction	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2
Reach Compliance Code	unknown	unknown	unknown	unknown	unknown	unknown	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
application	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE	GENERAL PURPOSE
Shell connection	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED	ISOLATED
Configuration	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE	SINGLE
Diode component materials	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON	SILICON
Diode type	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE	RECTIFIER DIODE
JESD-30 code	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2	O-LADB-W2
Maximum non-repetitive peak forward current	50 A	50 A	50 A	50 A	50 A	50 A	50 A	50 A
Number of components	1	1	1	1	1	1	1	1
Phase	1	1	1	1	1	1	1	1
Number of terminals	2	2	2	2	2	2	2	2
Package body material	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS	GLASS
Package shape	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND	ROUND
Package form	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON	DISK BUTTON
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum repetitive peak reverse voltage	1650 V	1650 V	1650 V	1650 V	1650 V	1650 V	1650 V	1650 V
Maximum reverse recovery time	1 µs	1 µs	1 µs	1 µs	1 µs	1 µs	1 µs	1 µs
surface mount	NO	NO	NO	NO	NO	NO	NO	NO
Terminal form	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE	WIRE
Terminal location	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL	AXIAL
Maker	-	NXP	NXP	NXP	NXP	NXP	NXP	NXP

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