CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208K3
Issued Date : 2012.06.28
Revised Date : 2012.10.02
Page No. : 1/6
BTN5551K3
Features
•
High breakdown voltage, BV
CEO
≥
160V
•
Pb-free lead plating package
Symbol
BTN5551K3
Outline
TO-92L
B：Base
C：Collector
E：Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : Pulse test, pulse width≤300μs, duty cycle≤2%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
R
θJA
Tj ; Tstg
Limits
180
160
6
600
2
(Note)
200
900
139
-55~+150
Unit
V
V
V
mA
A
mA
mW
°C/W
°C
BTN5551K3
CYStek Product Specification
CYStech Electronics Corp.
Characteristics
(Ta=25°C)
Symbol
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
*V
CE(sat)
1
*V
CE(sat)
2
*V
BE(sat)
1
*V
BE(sat)
2
*h
FE
1
*h
FE
2
*h
FE
3
*h
FE
4
f
T
Cob
Min.
180
160
6
-
-
-
-
-
-
100
100
50
120
100
-
Typ.
-
-
-
-
-
0.1
-
-
-
-
-
-
-
-
-
Max.
-
-
-
50
50
0.15
0.2
1
1
-
-
-
270
-
6
Unit
V
V
V
nA
nA
V
V
V
V
-
-
-
-
MHz
pF
Spec. No. : C208K3
Issued Date : 2012.06.28
Revised Date : 2012.10.02
Page No. : 2/6
Test Conditions
I
C
=100μA
I
C
=1mA
I
E
=10μA
V
CB
=120V
V
EB
=6V
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
I
C
=10mA, I
B
=1mA
I
C
=50mA, I
B
=5mA
V
CE
=5V, I
C
=1mA
V
CE
=5V, I
C
=10mA
V
CE
=5V, I
C
=50mA
V
CE
=6V, I
C
=2mA
V
CE
=20V, I
C
=10mA, f=100MHz
V
CB
=20V, I
E
=0A,f=1MHz
*Pulse Test: Pulse Width
≤300μs,
Duty Cycle≤2%
Ordering Information
Device
BTN5551K3-0-BK-G
BTN5551K3-0-TB-G
Package
TO-92L
(Pb-free lead plating and halogen-free package)
TO-92L
(Pb-free lead plating and halogen-free package)
Shipping
500 pcs / bag, 10 bags/box,
10 boxes/carton
2000 pcs / Tape & Box
BTN5551K3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics
Emitter Grounded Output Characteristics
0.08
0.07
Collector Current---IC(A)
Collector Current---IC(A)
1mA
Spec. No. : C208K3
Issued Date : 2012.06.28
Revised Date : 2012.10.02
Page No. : 3/6
Emitter Grounded Output Characteristics
0.18
0.16
5mA
0.06
0.05
0.04
0.03
0.02
0.01
0
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
500uA
400uA
300uA
200uA
IB=100uA
0.14
0.12
0.1
0.08
0.06
0.04
0.02
0
2.5mA
2mA
1.5mA
1mA
IB=500uA
6
0
1
2
3
4
5
Collector-to-Emitter Voltage---VCE(V)
6
Current Gain vs Collector Current
1000
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
Saturation Voltage vs Collector Current
1000
VCESAT=10IB
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
100
Saturation Voltage---(mV)
Current Gain---HFE
100
VCE=5V
10
0.1
1
10
Collector Current---IC(mA)
100
10
1
10
Collector Current---IC(mA)
100
Saturation Voltage vs Collector Current
10000
VCESAT=50IB
Saturation Voltage---(mV)
Ta=125°C
Ta=75°C
Ta=25°C
Ta=0°C
Ta=-40°C
On Voltage vs Collector Current
10000
VBEON@VCE=6V
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
1000
On Voltage---(mV)
1000
100
10
0.1
1
10
Collector Current---IC(mA)
100
100
1
10
Collector Current---IC(mA)
100
BTN5551K3
CYStek Product Specification
CYStech Electronics Corp.
Typical Characteristics(Cont.)
Saturation Voltage vs Collector Current
10000
VBESAT@IC=10IB
Spec. No. : C208K3
Issued Date : 2012.06.28
Revised Date : 2012.10.02
Page No. : 4/6
Current Gain vs Collector Current
1000
Saturation Voltage---(mV)
Current Gain---
HFE
VCE=5V
1000
Ta=-40°C
Ta=0°C
Ta=25°C
Ta=75°C
Ta=125°C
100
VCE=2V
VCE=1V
100
1
10
Collector Current---IC(mA)
100
10
0.1
1
10
Collector Current--- IC(mA)
100
Cutoff Frequency vs Collector Current
1000
Cutoff Frequency---fT(MHz)
VCE=10V
Capacitance vs Reverse-biased Voltage
100
100
Capacitance---(pF)
Cib
10
Cob
10
0.1
1
10
Collector Current---IC(mA)
100
1
0.1
1
10
Reverse-biased Voltage---VR(V)
100
Power Derating Curve
1000
900
Power Dissipation---PD(mW)
800
700
600
500
400
300
200
100
0
0
50
100
150
Ambient Temperature---TA(℃)
200
BTN5551K3
CYStek Product Specification
CYStech Electronics Corp.
Recommended wave soldering condition
Product
Pb-free devices
Peak Temperature
260 +0/-5
°C
Spec. No. : C208K3
Issued Date : 2012.06.28
Revised Date : 2012.10.02
Page No. : 5/6
Soldering Time
5 +1/-1 seconds
Recommended temperature profile for IR reflow
Profile feature
Average ramp-up rate
(Tsmax to Tp)
Preheat
−Temperature
Min(T
S
min)
−Temperature
Max(T
S
max)
−Time(ts
min
to ts
max
)
Time maintained above:
−Temperature
(T
L
)
−
Time (t
L
)
Peak Temperature(T
P
)
Time within 5°C of actual peak
temperature(tp)
Ramp down rate
Time 25
°C
to peak temperature
Sn-Pb eutectic Assembly
3°C/second max.
100°C
150°C
60-120 seconds
183°C
60-150 seconds
240 +0/-5
°C
10-30 seconds
6°C/second max.
6 minutes max.
Pb-free Assembly
3°C/second max.
150°C
200°C
60-180 seconds
217°C
60-150 seconds
260 +0/-5
°C
20-40 seconds
6°C/second max.
8 minutes max.
Note : All temperatures refer to topside of the package, measured on the package body surface.
BTN5551K3
CYStek Product Specification
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