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BTN5551K3-0-TB-G

Description
General Purpose NPN Epitaxial Planar Transistor
File Size203KB,6 Pages
ManufacturerCYSTEKEC
Websitehttp://www.cystekec.com/
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BTN5551K3-0-TB-G Overview

General Purpose NPN Epitaxial Planar Transistor

CYStech Electronics Corp.
General Purpose NPN Epitaxial Planar Transistor
Spec. No. : C208K3
Issued Date : 2012.06.28
Revised Date : 2012.10.02
Page No. : 1/6
BTN5551K3
Features
High breakdown voltage, BV
CEO
160V
Pb-free lead plating package
Symbol
BTN5551K3
Outline
TO-92L
B:Base
C:Collector
E:Emitter
Absolute Maximum Ratings
(Ta=25°C)
Parameter
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current (DC)
Collector Current (pulse)
Base Current
Power Dissipation
Thermal Resistance, Junction to Ambient
Operating Junction and Storage Temperature Range
Note : Pulse test, pulse width≤300μs, duty cycle≤2%
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
CP
I
B
P
D
R
θJA
Tj ; Tstg
Limits
180
160
6
600
2
(Note)
200
900
139
-55~+150
Unit
V
V
V
mA
A
mA
mW
°C/W
°C
BTN5551K3
CYStek Product Specification

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