Power Transistors
www.jmnic.com
BD895
Silicon PNP Transistors
Features
﹒With
TO-220 package
﹒With
general-purpose and amplifier applications
BCE
Absolute Maximum Ratings Tc=25
SYMBOL
V
CBO
V
CEO
V
EBO
I
B
I
C
P
C
T
j
T
stg
PARAMETER
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Base collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
8.0
70
150
-55~150
A
W
RATING
45
45
5.0
UNIT
V
V
V
TO-220
Electrical Characteristics Tc=25
SYMBOL
I
CBO
I
EBO
I
CEO
V
CBO
V
(BR)ceo
V
EBO
V
CE(sat-1)
V
CE(sat-2)
h
FE-1
h
FE-2
h
FE-3
V
BE(on)1
V
BE(on)2
f
T
C
ob
PARAMETER
Collector-base cut-off current
Emitter-base cut-off current
Collector-emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltages
Collector-emitter saturation voltages
Forward current transfer ratio
Forward current transfer ratio
Forward current transfer ratio
Base-emitter on voltages
Base-emitter on voltages
Transition frepuency
Output Capacitance
I
C
=3A; V
CE
=3V
2.5
V
I
C
=3A; V
CE
=3V
750
I
C
=3A; I
B
=12mA
2.5
V
I
C
=0.1A; I
B
=0
45
V
CONDITIONS
V
CB
=45V; I
E
=0
V
EB
=5.0V; I
C
=0
V
CE
=45V; I
B
=0
MIN
TYPE
MAX
0.2
2.0
0.5
UNIT
mA
mA
mA
Microcontroller MCU
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