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FFPF10H60STU

Description
10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, LEAD FREE, TO-220F, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size943KB,8 Pages
ManufacturerRochester Electronics
Websitehttps://www.rocelec.com/
Environmental Compliance  
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FFPF10H60STU Overview

10 A, 600 V, SILICON, RECTIFIER DIODE, TO-220AC, LEAD FREE, TO-220F, 2 PIN

FFPF10H60STU Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerRochester Electronics
Parts packaging codeTO-220AC
package instructionR-PSFM-T2
Contacts3
Reach Compliance Codeunknown
Other featuresFREE WHEELING DIODE, HIGH RELIABILITY
applicationHYPER FAST RECOVERY
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeTO-220AC
JESD-30 codeR-PSFM-T2
JESD-609 codee3
Humidity sensitivity levelNOT APPLICABLE
Maximum non-repetitive peak forward current100 A
Number of components1
Phase1
Number of terminals2
Maximum output current10 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formFLANGE MOUNT
Peak Reflow Temperature (Celsius)NOT APPLICABLE
Certification statusCOMMERCIAL
Maximum repetitive peak reverse voltage600 V
Maximum reverse recovery time0.04 µs
surface mountNO
Terminal surfaceMATTE TIN
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT APPLICABLE

FFPF10H60STU Preview

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FFPF10H60S Hyperfast 2 Rectifier
April 2007
FFPF10H60S
Hyperfast 2 Rectifier
Features
• High Speed Switching ( t
rr
=25ns(Typ.) @ I
F
=10A )
• High Reverse Voltage and High Reliability
• Avalanche Energy Rated
• Low Forward Voltage( V
F
=2.1V(Typ.) @ I
F
=10A )
tm
10A, 600V Hyperfast 2 Rectifier
The FFPF10H60S is hyperfast2 rectifier (t
rr
=25ns(Typ.) @
I
F
=10A). it has half the recovery time of ultrafast rectifier and is
silicon nitride passivated ion-implanted epitaxial planar con-
struction.
This device is intended for use as freewheeling/clamping rectifi-
ers in a variety of switching power supplies and other power
swithching applications. Its low stored charge and hyperfast soft
recovery minimize ringing and electrical noise in many power
switching circuits reducing power loss in the switching transis-
tors.
Applications
• General Purpose
• Switching Mode Power Supply
• Free-wheeling diode for motor application
• Power switching circuits
Pin Assignments
TO-220F-2L
1. Cathode 2. Anode
1
1. Cathode
2
2. Anode
Absolute Maximum Ratings
Symbol
V
RRM
V
RWM
V
R
I
F(AV)
I
FSM
T
J,
T
STG
T
C
= 25°C unless otherwise noted
Parameter
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
Average Rectified Forward Current
Non-repetitive Peak Surge Current
60Hz Single Half-Sine Wave
Operating Junction and Storage Temperature
= 25°C unless otherwise noted
Value
600
600
600
@ T
C
= 85
°C
10
100
- 65 to +150
Units
V
V
V
A
A
°C
Thermal Characteristics
T
Symbol
R
θJC
C
Parameter
Maximum Thermal Resistance, Junction to Case
Max
3.4
Units
°C/W
Package Marking and Ordering Information
Device Marking
F10H60S
Device
FFPF10H60STU
Package
TO-220F
Reel Size
-
Tape Width
-
Quantity
50
©2006 Fairchild Semiconductor Corporation
1
www.fairchildsemi.com
FFPF10H60S Rev. A
FFPF10H60S Hyperfast 2 Rectifier
Electrical Characteristics
T
Parameter
V
FM1
I
RM1
t
rr
I
F
= 10A
I
F
= 10A
V
R
= 600V
V
R
= 600V
C
= 25°C unless otherwise noted
Conditions
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 125
°C
T
C
= 25
°C
T
C
= 25
°C
T
C
= 25
°C
T
C
= 25
°C
T
C
= 25
°C
T
C
= 25
°C
Min.
-
-
-
-
-
-
-
-
-
-
20
Typ.
2.1
-
-
-
-
25
21
15
10
9.0
-
Max
2.5
2.2
1
2
35
40
-
-
-
-
-
Units
V
V
mA
mA
ns
ns
ns
ns
ns
nC
mJ
I
F
=1A, di/dt = 100A/µs, V
CC
= 30V
I
F
=10A, di/dt = 50A/µs, V
CC
= 390V
I
F
=10A, di/dt = 200A/µs, V
CC
= 390V
I
F
=10A, di/dt = 50A/µs, V
CC
= 390V
t
a
t
b
Q
rr
W
AVL
Avalanche Energy (L = 40mH)
Notes:
1. Pulse : Test Pulse width = 300µs, Duty Cycle = 2%
Test Circuit and Waveforms
2
FFPF10H60S Rev. A
www.fairchildsemi.com
FFPF10H60S Hyperfast 2 Rectifier
Typical Performance Characteristics
T
Figure 1. Typical Forward Voltage Drop
100
C
= 25°C unless otherwise noted
Figure 2. Typical Reverse Current
1E-4
FPRWARD CURRENT, I
F
[A]
REVERSE CURRENT, I
R
[A]
1E-5
T
C
= 125 C
o
o
10
T
C
=125 C
o
T
C
=25 C
o
1E-6
T
C
= 75 C
1E-7
1
T
C
=75 C
o
1E-8
T
C
= 25 C
o
0.1
0.0
1E-9
0.4
0.8
1.2
1.6
2.0
2.4
2.8
3.2
0
100
200
300
400
500
600
FORWARD VOLTAGE, V
F
[V]
REVERSE VOLTAGE, V
R
[V]
Figure 3. Typical Junction Capacitance
70
Figure 4. Typical Reverse Recovery Time
100
REVERSE RECOVERY TIME, trr [ns]
f = 1MHz
JUNCTION CAPACITANCE, C
J
[pF]
60
90
80
70
60
50
40
30
20
10
0
50
I
F
= 10A
50
T
C
= 125 C
o
40
30
T
C
= 75 C
o
20
10
T
C
= 25 C
o
0
1
10
100
1000
100
150
200
250
300 350 400 450500
REVERSE VOLTAGE, V
R
[V]
di/dt [A/
µ
s]
Figure 5. Typical Reverse Recovery Current
REVERSE RECOVERY CURRENT, Irr [A]
10
9
8
7
6
5
4
3
2
1
0
50
Figure 6. Forward Current Deration Curve
AVERAGE FORWARD CURRENT, I
F(AV)
[A]
16
14
12
10
8
I
F
= 10A
T
C
= 125 C
o
o
DC
6
4
2
0
50
T
C
= 25 C
T
C
= 75 C
100
150
200
250
300 350 400 450500
o
60
70
80
90
100
110
120
o
130
140
150
di/dt [A/
µ
s]
CASE TEMPERATURE, T
C
[ C]
3
FFPF10H60S Rev. A
www.fairchildsemi.com
FFPF10H60S Hyperfast 2 Rectifier
Mechanical Dimensions
TO-220F 2L
10.16
±0.20
ø3.18
±0.10
2.54
±0.20
(0.70)
3.30
±0.10
6.68
±0.20
15.80
±0.20
(1.00x45°)
(6.50)
(1.80)
9.75
±0.30
12.00
±0.20
MAX1.47
0.80
±0.10
2.76
±0.20
0.35
±0.10
2.54TYP
[2.54
±0.20
]
2.54TYP
[2.54
±0.20
]
+0.10
0.50
–0.05
9.40
±0.20
4.70
±0.20
Dimensions in Millimeters
4
FFPF10H60S Rev. A
15.87
±0.20
www.fairchildsemi.com

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