K4J52324QE-BJ1A0 datasheet, PDF

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K4J52324QE-BJ1A0: DescriptionDDR DRAM, 16MX32, 0.2ns, CMOS, PBGA136, FBGA-136; Categorystorage storage; File Size1MB，58 Pages; ManufacturerSAMSUNG; Websitehttp://www.samsung.com/Products/Semiconductor/; Environmental Compliance

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K4J52324QE-BJ1A0 Overview

DDR DRAM, 16MX32, 0.2ns, CMOS, PBGA136, FBGA-136

K4J52324QE-BJ1A0 Parametric

Parameter Name	Attribute value
Is it Rohs certified?	conform to
Maker	SAMSUNG
Parts packaging code	BGA
package instruction	TFBGA, BGA136,12X17,32
Contacts	136
Reach Compliance Code	unknown
ECCN code	EAR99
access mode	MULTI BANK PAGE BURST
Maximum access time	0.2 ns
Other features	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	1000 MHz
I/O type	COMMON
interleaved burst length	4,8
JESD-30 code	R-PBGA-B136
JESD-609 code	e1
length	14 mm
memory density	536870912 bit
Memory IC Type	DDR DRAM
memory width	32
Humidity sensitivity level	3
Number of functions	1
Number of ports	1
Number of terminals	136
word count	16777216 words
character code	16000000
Operating mode	SYNCHRONOUS
Maximum operating temperature	85 °C
Minimum operating temperature
organize	16MX32
Output characteristics	3-STATE
Package body material	PLASTIC/EPOXY
encapsulated code	TFBGA
Encapsulate equivalent code	BGA136,12X17,32
Package shape	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260
power supply	1.9 V
Certification status	Not Qualified
refresh cycle	8192
Maximum seat height	1.2 mm
self refresh	YES
Continuous burst length	4,8
Maximum standby current	0.11 A
Maximum slew rate	1.52 mA
Maximum supply voltage (Vsup)	2 V
Minimum supply voltage (Vsup)	1.8 V
Nominal supply voltage (Vsup)	1.9 V
surface mount	YES
technology	CMOS
Temperature level	COMMERCIAL EXTENDED
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)
Terminal form	BALL
Terminal pitch	0.8 mm
Terminal location	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED
width	11 mm

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K4J52324QE

512M GDDR3 SDRAM

512Mbit GDDR3 SDRAM

Revision 1.3

Feb 2008

INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS,

AND IS SUBJECT TO CHANGE WITHOUT NOTICE.

NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE,

EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

TO ANY INTELLECTUAL PROPERTY RIGHTS IN SAMSUNG PRODUCTS OR TECHNOLOGY. ALL

INFORMATION IN THIS DOCUMENT IS PROVIDED

ON AS "AS IS" BASIS WITHOUT GUARANTEE OR WARRANTY OF ANY KIND.

1. For updates or additional information about Samsung products, contact your nearest Samsung office.

2. Samsung products are not intended for use in life support, critical care, medical, safety equipment, or similar

applications where Product failure could result in loss of life or personal or physical harm, or any military or

defense application, or any governmental procurement to which special terms or provisions may apply.

* Samsung Electronics reserves the right to change products or specification without notice.

- 1/58 -

Rev. 1.3 Feb 2008

K4J52324QE-BJ1A0 Related Products

	K4J52324QE-BJ1A0	K4J52324QE-BJ110	K4J52324QE-BC140	K4J52324QE-BC120
Description	DDR DRAM, 16MX32, 0.2ns, CMOS, PBGA136, FBGA-136	DDR DRAM, 16MX32, 0.22ns, CMOS, PBGA136, FBGA-136	DDR DRAM, 16MX32, 0.26ns, CMOS, PBGA136, FBGA-136	DDR DRAM, 16MX32, 0.23ns, CMOS, PBGA136, FBGA-136
Is it Rohs certified?	conform to	conform to	conform to	conform to
Parts packaging code	BGA	BGA	BGA	BGA
package instruction	TFBGA, BGA136,12X17,32	TFBGA, BGA136,12X17,32	TFBGA, BGA136,12X17,32	TFBGA, BGA136,12X17,32
Contacts	136	136	136	136
Reach Compliance Code	unknown	compliant	unknown	unknown
ECCN code	EAR99	EAR99	EAR99	EAR99
access mode	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST	MULTI BANK PAGE BURST
Maximum access time	0.2 ns	0.22 ns	0.26 ns	0.23 ns
Other features	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH	AUTO/SELF REFRESH
Maximum clock frequency (fCLK)	1000 MHz	900 MHz	700 MHz	800 MHz
I/O type	COMMON	COMMON	COMMON	COMMON
interleaved burst length	4,8	4,8	4,8	4,8
JESD-30 code	R-PBGA-B136	R-PBGA-B136	R-PBGA-B136	R-PBGA-B136
length	14 mm	14 mm	14 mm	14 mm
memory density	536870912 bit	536870912 bit	536870912 bit	536870912 bit
Memory IC Type	DDR DRAM	DDR DRAM	DDR DRAM	DDR DRAM
memory width	32	32	32	32
Number of functions	1	1	1	1
Number of ports	1	1	1	1
Number of terminals	136	136	136	136
word count	16777216 words	16777216 words	16777216 words	16777216 words
character code	16000000	16000000	16000000	16000000
Operating mode	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS	SYNCHRONOUS
Maximum operating temperature	85 °C	85 °C	85 °C	85 °C
organize	16MX32	16MX32	16MX32	16MX32
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	TFBGA	TFBGA	TFBGA	TFBGA
Encapsulate equivalent code	BGA136,12X17,32	BGA136,12X17,32	BGA136,12X17,32	BGA136,12X17,32
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH	GRID ARRAY, THIN PROFILE, FINE PITCH
Peak Reflow Temperature (Celsius)	260	NOT SPECIFIED	260	260
power supply	1.9 V	1.9 V	1.8 V	1.8 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
refresh cycle	8192	8192	8192	8192
Maximum seat height	1.2 mm	1.2 mm	1.2 mm	1.2 mm
self refresh	YES	YES	YES	YES
Continuous burst length	4,8	4,8	4,8	4,8
Maximum standby current	0.11 A	0.1 A	0.08 A	0.09 A
Maximum slew rate	1.52 mA	1.27 mA	0.89 mA	1.13 mA
Maximum supply voltage (Vsup)	2 V	2 V	1.9 V	1.9 V
Minimum supply voltage (Vsup)	1.8 V	1.8 V	1.7 V	1.7 V
Nominal supply voltage (Vsup)	1.9 V	1.9 V	1.8 V	1.8 V
surface mount	YES	YES	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL EXTENDED	COMMERCIAL EXTENDED	COMMERCIAL EXTENDED	COMMERCIAL EXTENDED
Terminal form	BALL	BALL	BALL	BALL
Terminal pitch	0.8 mm	0.8 mm	0.8 mm	0.8 mm
Terminal location	BOTTOM	BOTTOM	BOTTOM	BOTTOM
Maximum time at peak reflow temperature	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED
width	11 mm	11 mm	11 mm	11 mm
Maker	SAMSUNG	-	SAMSUNG	SAMSUNG
JESD-609 code	e1	-	e1	e1
Humidity sensitivity level	3	-	3	3
Terminal surface	Tin/Silver/Copper (Sn/Ag/Cu)	-	Tin/Silver/Copper (Sn/Ag/Cu)	Tin/Silver/Copper (Sn/Ag/Cu)

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