V-Chip Memory Back-Up Capacitors
FEATURES
• DOUBLE LAYER CONSTRUCTION
• POWER BACK-UP FOR CMOS DEVICES
• SURFACE MOUNTABLE V-CHIP STYLE
• LEAD-FREE FINISH
CHARACTERISTICS
Rated Voltage Range
Rated Capacitance Range
Operating Temp. Range
Capacitance Tolerance
Load Life Test
+85°C 240 hours
Temperature Cycling
(5 cycles, -25 ~ +70°C
3.5 & 5.5VDC
0.047F ~ 0.47F (47,000μF ~ 470,000μF)
-40°C ~ +85°C
+80%/-20% (Z)
Δ
Capacitance Change
Maximum ESR
Current at 30 minutes
Δ
Capacitance Change
Maximum ESR
Current at 30 minutes
Δ
Capacitance Change
Maximum ESR
Current at 30 minutes
NEXCW Series
RoHS Compliant
High Temperature Reflow
+260°C
Super
Capacitor
Application
Guide
Within ±30% of initial measured value
Less than 200% of the specified maximum value
Less than 200% of the specified maximum value
Within +80%/-20% of specified value
Less than specified maximum value
Less than specified maximum value
Within ±20% of initial measured value
Less than 120% of the specified maximum value
Less than 120% of the specified maximum value
Humidity Resistance
(240 hours @ 40°C/90% RH)
STANDARD VALUES AND SPECIFICATIONS
NIC P/N
NEXCW104Z3.5V10.7X5.5TRF
NEXCW224Z3.5V10.7X5.5TRF
NEXCW474Z3.5V10.7X8.5TRF
NEXCW473Z5.5V10.7X5.5TRF
NEXCW104Z5.5V10.7X5.5TRF
NEXCW224Z5.5V10.7X8.5TRF
Capacitance
Value (F)
Discharge
0.10
0.22
0.47
0.047
0.10
0.22
Working
Voltage
(VDC)
3.5
3.5
3.5
5.5
5.5
5.5
Max. Current
@ 30 minutes
(mA)
0.090
0.200
0.420
0.071
0.150
0.330
Max. ESR
@ 1KHz
(Ω)
100
50
50
100
50
50
HIGH TEMPERATURE REFLOW PROFILE
Temperature - Deg. C
250
200
150
100
50
25
Time above 170°C
50 sec. max.
Pre-heat
150°C ~ 200°C 150 sec. max.
Time above
217°C
70 sec. max.
Cool Down
Peak Temperature
(260°C)
Peak Temperature
Time above +255°C
Time above +230°C
Time above +220°C
Time above +217°C
150°C ~ +200°C
(with time above +170°C
50 sec. max.)
+260°C
10 sec. max.
45 sec. max.
60 sec. max.
70 sec. max.
150 sec. max.
0
Time
1. The temperatures shown are the surface temperature values on the top of the can and on the capacitor terminals.
2. 2x reflow process maximum. Capacitor should be allowed to return to room temperature before second reflow process.
WASHING is NOT RECOMMENDED. Additional precautions can be found at
www.niccomp.com/precautions
If in doubt or uncertainty, please review your specific application - process details
with NIC’s technical support personnel:
tpmg@niccomp.com
PRECAUTIONS
NIC COMPONENTS CORP.
www.niccomp.com
www.lowESR.com
www.RFpassives.com
www.SMTmagnetics.com
SPECIFICATIONS ARE SUBJECT TO CHANGE
1
V-Chip Memory Back-Up Capacitors
CASE DIMENSIONS (mm)
Case Size
10.7 x 5.5
10.7 x 8.5
Dφ ±
10.7
10.7
L max.
5.5
8.5
A/B ±0.2
10.8
10.8
I
3.9 ±0.5
3.9 ±0.5
W
1.2 ± 0.1
1.2 ± 0.1
P
5.0
5.0
0.3mm max.
Dφ
NEXCW Series
+
w
I
I
I
-
A
L
P
B
LAND PATTERN DIMENSIONS (mm)
Case
Diameter
10.7
R
5.0
S
4.9
T
2.5
T
COMPONENT OUTLINE
S
R
S
CARRIER TAPE DIMENSIONS (mm)
Case Size
10.7 x 5.5
10.7 x 8.5
A
11.4
11.4
B
13.0
13.0
D
1.55
1.55
E
1.75
1.75
F
11.5
11.5
P
4.0
4.0
P
1
16.0
16.0
T
1
0.4
0.4
T
2
6.0
8.4
W
24.0
24.0
Quantity/Reel
1,000
500
P
1.5∅ +0.1/-
D
-
1.75
±
E
F
T
1
W
B
+
A
REEL DIMENSIONS (mm)
Case Size
10.7 x 5.5
10.7 x 8.5
A ± 2.0
380
380
B ± 1.0
80.0
100.0
C ± 0.5
13.0
13.0
D ± 0.8
21.0
21.0
P
1
E ± 0.5
2.0
2.0
Feeding
T
2
t
2.0
2.0
W
25.5 ± 0.5
25.5 ± 1.0
t
C
E
A
B
W
2
NIC COMPONENTS CORP.
www.niccomp.com
www.lowESR.com
www.RFpassives.com
www.SMTmagnetics.com
SPECIFICATIONS ARE SUBJECT TO CHANGE
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