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1N647E3

Description
Rectifier Diode, 1 Element, 0.4A, Silicon, DO-35, GLASS PACKAGE-2
CategoryDiscrete semiconductor    diode   
File Size166KB,3 Pages
ManufacturerMicrosemi
Websitehttps://www.microsemi.com
Download Datasheet Parametric View All

1N647E3 Overview

Rectifier Diode, 1 Element, 0.4A, Silicon, DO-35, GLASS PACKAGE-2

1N647E3 Parametric

Parameter NameAttribute value
MakerMicrosemi
package instructionGLASS PACKAGE-2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresMETALLURGICALLY BONDED
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeRECTIFIER DIODE
JEDEC-95 codeDO-35
JESD-30 codeO-LALF-W2
Number of components1
Number of terminals2
Maximum output current0.4 A
Package body materialGLASS
Package shapeROUND
Package formLONG FORM
Maximum power dissipation0.6 W
surface mountNO
Terminal formWIRE
Terminal locationAXIAL

1N647E3 Preview

Silicon Rectifier Diodes
Use Advantages
1N645 to 649
or
1N645-1 to 649-1
DO-35 Glass Package
Used as a general purpose rectifier in power supplies, or for clipping and
steering applications.
High performance alternative to small signal diodes where space does not
permit use of power rectifiers.
May be used in hostile environments where hermeticity and reliability are
important i.e. (Military and Aero/Space). MIL-S- 19500/ 240 approvals.
Available up to JANTXV-1 level.
"S" level screening capability to Source Control Drawings.
Features
D O -3 5 G la ss P a ck a g e
Six Sigma quality
Lead Dia.
0.018-0.022"
Humidity proof glass
0.458-0.558 mm
Metallurgically bonded
Thermally matched system
D ia .
1 .0 "
L e n g th
No thermal fatigue
2 5 .4 m m
mm
(M in .)
1.53-2.28 mm
High surge capability
Sigma Bond™ plated contacts
100% guaranteed solderability
(DO-213AA) SMD MELF commercial (LL) and MIL (UR-1) types available
0.12 0-.200 "
3.05 -5 .08-
0.06 -0 .09"
Absolute Maximum Ratings
Power Dissipation at 3/8" from the body, T
L
= 75
o
C
Average Forward Rectified Current at T
L
Thermal Impedance
Detail Specifications
Reverse
Voltage
(V
R
)
Breakdown
Voltage
(MIN.)
@ 100µA
(B
V
)
Symbol
P
tot
I
AV
T
O&S
Z
qJX
Value
600
400
-65 to 175
35
o
Unit
mWatts
mAmps
o
= 75
o
C
Operating and Storage Temperature Range
C
C/W
Maximum
Forward
Maximum
Average Rectified Current
Voltage
Reverse Leakage Current
_______________
Drop
_______________
(I
O
)
(I
O
)
(V
F
) @ I
F
= 400mA
(I
R
) @ V
R
25° C
150° C (MIN.)
(MAX.) 25° C
100° C
Maximum
Typical
Surge
Junction
Current Capacitance
(I
FSM
)
@ -12V
(NOTE 1)
(C
O
)
Type
Volts
Volts
Amps
Amps
0.15
0.15
0.15
0.15
0.15
Second
Volts
1.0
1.0
1.0
1.0
1.0
µA
0.2
0.2
0.2
0.2
0.2
µA
15
15
20
20
25
Amps
3
3
3
3
3
pF
9
9
9
9
9
1N645,-1
225
275
1N646,-1
300
360
1N647,-1
400
480
1N648,-1
500
600
1N649,-1
600
720
Note 1: Surge Current @T
A
= +25° C to
0.4
0.4
0.4
0.4
0.4
+150° C, for 1
For MELF DO-213AA surface mount package, replace "1N" prefix with "LL" for commercial.
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Silicon Rectifier Diodes
1N645-1
thru
1N649-1
DO-35 Glass Package
DO-35 DERATING (175 C Tj)
D O - 35 PO W ER D ER AT IN G C U R V E
500
400
P ower Dissipated (MilliWatts)
300
200
100
0
0
20
40
60
80
100
120
140
160
180
T e m p e ra tu re ( 3/8" fro m b od y) C
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
Silicon Rectifier Diodes
1N645-1
thru
1N649-1
DO-35 Glass Package
Silicon Rectifier Diodes
1N645-1 thru 1N649-1
1 N 6 4 5 - 6 4 9 R ec tifie r D io d e s
Typ ic al Ir V r = P IV ; Ta = +1 50 C
1N 6 49 -1
6 .9
6 .7
6 .5
6 .3
Ir (Typic al V alues ) mic roA mps
6 .1
5 .9
5 .7
5 .5
5 .3
5 .1
4 .9
4 .7
4 .5
2 00
3 00
4 00
V r - V o lts
5 00
6 00
1N 6 45 -1
1 N 6 46
1N 6 47 -1
1 N 6 48
6 Lake Street - Lawrence, MA 01841
Tel: 978-681-0392 - Fax: 978-681-9135
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