Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
FEATURES
• Low forward volt drop
• Fast switching
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
PBYR1045CTD series
SYMBOL
QUICK REFERENCE DATA
V
R
= 40 V/ 45 V
I
O(AV)
= 10 A
V
F
≤
0.6 V
SOT428
DESCRIPTION
tab
a1
1
k 2
a2
3
GENERAL DESCRIPTION
Dual schottky rectifier diodes
intended for use as output rectifiers
in low voltage, high frequency
switched mode power supplies.
The PBYR1045CTD series is
supplied in the SOT428 surface
mounting package.
PINNING
PIN
1
2
3
tab
anode 1
cathode
1
anode 2
2
cathode
1
3
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134)
SYMBOL PARAMETER
V
RRM
V
RWM
V
R
I
O(AV)
I
FRM
I
FSM
Peak repetitive reverse
voltage
Working peak reverse
voltage
Continuous reverse voltage
Average rectified forward
current (both diodes
conducting)
Repetitive peak forward
current per diode
Non-repetitive peak forward
current per diode
Peak repetitive reverse
surge current per diode
Operating junction
temperature
Storage temperature
CONDITIONS
PBYR10
-
-
T
mb
≤
108 ˚C
square wave;
δ
= 0.5;
T
mb
≤
127 ˚C
square wave;
δ
= 0.5;
T
mb
≤
127 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; T
j
= 125 ˚C prior to
surge; with reapplied V
RRM(max)
pulse width and repetition rate
limited by T
j max
-
-
-
-
-
-
-
- 65
MIN.
MAX.
40CTD
40
40
40
10
10
100
110
1
150
175
45CTD
45
45
45
UNIT
V
V
V
A
A
A
A
A
˚C
˚C
I
RRM
T
j
T
stg
1
it is not possible to make connection to pin 2 of the SOT428 package
July 1998
1
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
R
th j-a
Thermal resistance junction
to mounting base
Thermal resistance junction
to ambient
CONDITIONS
per diode
both diodes
pcb mounted, minimum footprint, FR4
board
PBYR1045CTD series
MIN.
-
-
-
TYP. MAX. UNIT
-
-
50
4.5
3
-
K/W
K/W
K/W
ELECTRICAL CHARACTERISTICS
All characteristics are per diode at T
j
= 25 ˚C unless otherwise specified
SYMBOL PARAMETER
V
F
I
R
C
d
Forward voltage
Reverse current
Junction capacitance
CONDITIONS
I
F
= 5 A; T
j
= 125˚C
I
F
= 10 A; T
j
= 125˚C
I
F
= 10 A
V
R
= V
RWM
V
R
= V
RWM
; T
j
= 100˚C
V
R
= 5 V; f = 1 MHz, T
j
= 25˚C to 125˚C
MIN.
-
-
-
-
-
-
TYP. MAX. UNIT
0.52
0.7
0.72
0.06
6
155
0.6
0.77
0.87
0.5
15
-
V
V
V
mA
mA
pF
July 1998
2
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
PBYR1045CTD series
5
4
3
2
Forward dissipation, PF (W) PBYR1045CTD
Vo = 0.43 V
Rs = 0.034 Ohms
0.5
0.2
0.1
Tmb(max) / C
137.5
D = 1.0
132
146.5
100
Reverse current, IR (mA)
PBYR645CT
10
125 C
100 C
1
I
t
p
D=
t
p
T
t
75 C
50 C
Tj = 25 C
141
155.5
1
T
0.1
0
0
1
2
3
4
5
6
Average forward current, IF(AV) (A)
7
150
8
0.01
0
25
Reverse voltage, VR (V)
50
Fig.1. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; square current waveform where
I
F(AV)
=I
F(RMS)
x
√
D.
Forward dissipation, PF (W) PBYR1045CTD Tmb(max) / C
137.5
Vo = 0.43 V
Rs = 0.034 Ohms
a = 1.57
4
132
1.9
2.2
2.8
3
146.5
4
5
2
1
0
141
155.5
150
5
Fig.4. Typical reverse leakage current per diode;
I
R
= f(V
R
); parameter T
j
Cd / pF
1000
PBYR645CT
100
10
0
1
2
3
4
Average forward current, IF(AV) (A)
1
10
VR / V
100
Fig.2. Maximum forward dissipation P
F
= f(I
F(AV)
) per
diode; sinusoidal current waveform where a = form
factor = I
F(RMS)
/ I
F(AV)
.
BYV118
Fig.5. Typical junction capacitance per diode;
C
d
= f(V
R
); f = 1 MHz; T
j
= 25˚C to 125 ˚C.
20
Forward current, IF (A)
Tj = 25 C
Tj = 125 C
10
Transient thermal impedance, Zth j-mb (K/W)
15
1
typ
10
max
5
0.1
P
D
t
p
D=
t
p
T
t
T
0
0.01
0
0.2
0.4
0.6
0.8
1
Forward voltage, VF (V)
1.2
1.4
1us
10us
100us
1ms
10ms 100ms
1s
pulse width, tp (s)
BYV118
10s
Fig.3. Typical and maximum forward characteristic
I
F
= f(V
F
); parameter T
j
Fig.6. Transient thermal impedance; per diode;
Z
th j-mb
= f(t
p
).
July 1998
3
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
MECHANICAL DATA
Dimensions in mm : Net Mass: 1.4 g
seating plane
6.73 max
1.1
2.38 max
0.93 max
PBYR1045CTD series
5.4
tab
4 min
6.22 max
10.4 max
4.6
2
1
3
0.5 min
0.3
0.5
0.5
0.8 max
(x2)
2.285 (x2)
Fig.7. SOT428 : centre pin connected to mounting base.
MOUNTING INSTRUCTIONS
Dimensions in mm
7.0
7.0
2.15
2.5
1.5
4.57
Fig.8. SOT428 : soldering pattern for surface mounting.
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
damage to MOS gate oxide.
2. Epoxy meets UL94 V0 at 1/8".
July 1998
4
Rev 1.200
Philips Semiconductors
Product specification
Rectifier diodes
Schottky barrier
DEFINITIONS
Data sheet status
Objective specification
Product specification
Limiting values
PBYR1045CTD series
This data sheet contains target or goal specifications for product development.
This data sheet contains final product specifications.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
©
Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
July 1998
5
Rev 1.200
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