PHB8ND50E118 datasheet, PDF - EEWORLD Datasheet

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PHB8ND50E118: DescriptionTRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power; CategoryDiscrete semiconductor The transistor; File Size268KB，6 Pages; ManufacturerNXP; Websitehttps://www.nxp.com

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PHB8ND50E118 Overview

TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power

PHB8ND50E118 Parametric

Parameter Name	Attribute value
Maker	NXP
package instruction	SMALL OUTLINE, R-PSSO-G2
Reach Compliance Code	unknown
Other features	FREDFET, FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	510 mJ
Shell connection	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V
Maximum drain current (ID)	8.5 A
Maximum drain-source on-resistance	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2
Number of components	1
Number of terminals	2
Operating mode	ENHANCEMENT MODE
Maximum operating temperature	150 °C
Package body material	PLASTIC/EPOXY
Package shape	RECTANGULAR
Package form	SMALL OUTLINE
Polarity/channel type	N-CHANNEL
Maximum pulsed drain current (IDM)	34 A
Certification status	Not Qualified
surface mount	YES
Terminal form	GULL WING
Terminal location	SINGLE
transistor applications	SWITCHING
Transistor component materials	SILICON

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PHB8ND50E118 Related Products

	PHB8ND50E118	PHP8ND50E127	PHW8ND50E127
Description	TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power	TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, FET General Purpose Power	TRANSISTOR 8.5 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, FET General Purpose Power
Maker	NXP	NXP	NXP
package instruction	SMALL OUTLINE, R-PSSO-G2	FLANGE MOUNT, R-PSFM-T3	FLANGE MOUNT, R-PSFM-T3
Reach Compliance Code	unknown	unknown	unknown
Other features	FREDFET, FAST SWITCHING	FREDFET, FAST SWITCHING	FREDFET, FAST SWITCHING
Avalanche Energy Efficiency Rating (Eas)	510 mJ	510 mJ	510 mJ
Shell connection	DRAIN	DRAIN	DRAIN
Configuration	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE	SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage	500 V	500 V	500 V
Maximum drain current (ID)	8.5 A	8.5 A	8.5 A
Maximum drain-source on-resistance	0.85 Ω	0.85 Ω	0.85 Ω
FET technology	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR	METAL-OXIDE SEMICONDUCTOR
JESD-30 code	R-PSSO-G2	R-PSFM-T3	R-PSFM-T3
Number of components	1	1	1
Number of terminals	2	3	3
Operating mode	ENHANCEMENT MODE	ENHANCEMENT MODE	ENHANCEMENT MODE
Maximum operating temperature	150 °C	150 °C	150 °C
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	SMALL OUTLINE	FLANGE MOUNT	FLANGE MOUNT
Polarity/channel type	N-CHANNEL	N-CHANNEL	N-CHANNEL
Maximum pulsed drain current (IDM)	34 A	34 A	34 A
Certification status	Not Qualified	Not Qualified	Not Qualified
surface mount	YES	NO	NO
Terminal form	GULL WING	THROUGH-HOLE	THROUGH-HOLE
Terminal location	SINGLE	SINGLE	SINGLE
transistor applications	SWITCHING	SWITCHING	SWITCHING
Transistor component materials	SILICON	SILICON	SILICON
JEDEC-95 code	-	TO-220AB	TO-247

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