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ZXMP3A17E6TC

Description
Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN
CategoryDiscrete semiconductor    The transistor   
File Size155KB,7 Pages
ManufacturerDiodes Incorporated
Environmental Compliance  
Download Datasheet Parametric View All

ZXMP3A17E6TC Overview

Small Signal Field-Effect Transistor, 3.2A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 6 PIN

ZXMP3A17E6TC Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerDiodes Incorporated
Parts packaging codeSOT-23
package instructionSOT-23, 6 PIN
Contacts6
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresLOW THRESHOLD
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage30 V
Maximum drain current (ID)3.2 A
Maximum drain-source on-resistance0.07 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G6
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals6
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)260
Polarity/channel typeP-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal surfaceMatte Tin (Sn)
Terminal formGULL WING
Terminal locationDUAL
Maximum time at peak reflow temperature40
transistor applicationsSWITCHING
Transistor component materialsSILICON

ZXMP3A17E6TC Preview

ADVANCE INFORMATION
30V P-CHANNEL ENHANCEMENT MODE MOSFET
ZXMP3A17E6
SUMMARY
V
(BR)DSS
= -30V; R
DS(ON)
= 0.07
I
D
= -4.0A
DESCRIPTION
This new generation of TRENCH MOSFETs from Zetex utilizes a unique structure
that combines the benefits of low on-resistance with fast switching speed. This
makes them ideal for high efficiency, low voltage, power management
applications.
SOT23-6
FEATURES
Low on-resistance
Fast switching speed
Low threshold
Low gate drive
SOT23-6 package
APPLICATIONS
DC - DC Converters
Power Management Functions
Disconnect switches
Motor control
ORDERING INFORMATION
DEVICE
ZXMP3A17E6TA
ZXMP3A17E6TC
REEL
SIZE
7”
13”
TAPE
WIDTH
8mm
8mm
QUANTITY
PER REEL
3000 units
10000 units
PINOUT
DEVICE MARKING
317
Top View
ISSUE 2 - JUNE 2003
1
SEMICONDUCTORS
ZXMP3A17E6
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
Drain-Source Voltage
Gate Source Voltage
Continuous Drain Current V
GS
=10V; T
A
=25°C (b)
V
GS
=10V; T
A
=70°C (b)
V
GS
=10V; T
A
=25°C (a)
Pulsed Drain Current (c)
Continuous Source Current (Body Diode) (b)
Pulsed Source Current (Body Diode) (c)
Power Dissipation at T
A
=25°C (a)
Linear Derating Factor
Power Dissipation at T
A
=25°C (b)
Linear Derating Factor
Operating and Storage Temperature Range
SYMBOL
V
DSS
V
GS
I
D
ADVANCE INFORMATION
LIMIT
-30
20
-4.0
-3.2
-3.2
-14.4
-2.5
-14.4
1.1
8.8
1.7
13.6
-55 to +150
UNIT
V
V
A
I
DM
I
S
I
SM
P
D
P
D
T
j
:T
stg
A
A
A
W
mW/°C
W
mW/°C
°C
THERMAL RESISTANCE
PARAMETER
Junction to Ambient (a)
Junction to Ambient (b)
SYMBOL
R
θJA
R
θJA
VALUE
113
73
UNIT
°C/W
°C/W
NOTES
(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions
(b) For a device surface mounted on FR4 PCB measured at t 5 secs.
(c) Repetitive rating 25mm x 25mm FR4 PCB, D = 0.05, pulse width 10 s - pulse width limited by maximum junction temperature. Refer to
Transient Thermal Impedance graph.
ISSUE 2 - JUNE 2003
SEMICONDUCTORS
2
ADVANCE INFORMATION
CHARACTERISTICS
ZXMP3A17E6
1.2
10
Max Power Dissipation (W)
-I
D
Drain Current (A)
R
DS(ON)
Limited
1.0
0.8
0.6
0.4
0.2
0.0
0
25
50
75
100
125
150
1
DC
1s
100ms
10ms
1ms
100us
100m
10m
0.1
Single Pulse, T
amb
=25°C
1
10
P-channel Safe Operating Area
-V
DS
Drain-Source Voltage (V)
Temperature (°C)
Derating Curve
Thermal Resistance (°C/W)
100
80
D=0.5
60
40
20
0
100µ 1m
10m 100m
Single Pulse
D=0.2
D=0.05
D=0.1
MaximumPower (W)
100
Single Pulse
T
amb
=25°C
10
1
100µ 1m
10m 100m
1
10
100
1k
1
10
100
1k
Pulse Width (s)
Pulse Width (s)
Transient Thermal Impedance
Pulse Power Dissipation
ISSUE 2 - JUNE 2003
3
SEMICONDUCTORS
ZXMP3A17E6
PARAMETER
STATIC
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Body Leakage
Gate-Source Threshold Voltage
Static Drain-Source On-State
Resistance
(1)
Forward Transconductance
(1)(3)
DYNAMIC
(3)
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
SWITCHING
(2) (3)
ADVANCE INFORMATION
ELECTRICAL CHARACTERISTICS
(at T
A
= 25°C unless otherwise stated).
SYMBOL
MIN.
TYP.
MAX. UNIT CONDITIONS.
V
(BR)DSS
I
DSS
I
GSS
V
GS(th)
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
g
Q
gs
Q
gd
V
SD
t
rr
Q
rr
-30
-0.5
100
-1.0
0.070
0.110
6.4
V
A
nA
V
I
D
=-250 A, V
GS
=0V
V
DS
=-30V, V
GS
=0V
V
GS
= 20V, V
DS
=0V
I =-250 A, V
DS
= V
GS
D
V
GS
=-10V, I
D
=-3.2A
V
GS
=-4.5V, I
D
=-2.5A
V
DS
=-15V,I
D
=-3.2A
S
630
113
78
pF
pF
pF
V
DS
=-15V, V
GS
=0V,
f=1MHz
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Gate Charge
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
SOURCE-DRAIN DIODE
Diode Forward Voltage
(1)
Reverse Recovery Time
(3)
Reverse Recovery Charge
(3)
1.74
2.87
29.2
8.72
8.28
15.8
1.84
2.8
ns
ns
ns
ns
nC
nC
nC
nC
V
DS
=-15V,V
GS
=-10V,
I
D
=-3.2A
V
DS
=-15V,V
GS
=-5V,
I
D
=-3.2A
V
DD
=-15V, I
D
=-1A
R
G
≅6.0
, V
GS
=-10V
-0.85
19.5
16.3
-1.2
V
ns
nC
T
J
=25°C, I
S
=-2.5A,
V
GS
=0V
T
J
=25°C, I
F
=-1.7A,
di/dt= 100A/µs
NOTES
(1) Measured under pulsed conditions. Width=300µs. Duty cycle
2% .
(2) Switching characteristics are independent of operating junction temperature.
(3) For design aid only, not subject to production testing.
ISSUE 2 - JUNE 2003
SEMICONDUCTORS
4
ADVANCE INFORMATION
TYPICAL CHARACTERISTICS
ZXMP3A17E6
T = 25°C
10V
5V
T = 150°C
10V
-I
D
Drain Current (A)
1
2.5V
-V
GS
2V
-I
D
Drain Current (A)
10
4V
5V
3.5V
3V
10
4V
3.5V
3V
2.5V
2V
1
-V
GS
1.5V
0.1
0.1
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
0.01
0.1
-V
DS
Drain-Source Voltage (V)
1
10
Output Characteristics
1.4
Normalised R
DS(on)
and V
GS(th)
Output Characteristics
V
GS
= -10V
I
D
= -3.2A
R
DS(on)
10
-I
D
Drain Current (A)
1.2
1.0
T = 150°C
1
T = 25°C
V
GS(th)
0.8
V
GS
= V
DS
I
D
= -250uA
0.1
1
2
-V
DS
= 10V
3
4
0.6
-50
0
50
100
150
-V
GS
Gate-Source Voltage (V)
Tj Junction Temperature (°C)
Typical Transfer Characteristics
R
DS(on)
Drain-Source On-Resistance
(Ω)
2V
-V
GS
T = 25°C
2.5V
3V
3.5V
Normalised Curves v Temperature
10
-I
SD
Reverse Drain Current (A)
10
T = 150°C
1
T = 25°C
1
4V
5V
10V
0.1
0.1
0.1
1
10
0.01
0.2
On-Resistance v Drain Current
-I
D
Drain Current (A)
-V
SD
Source-Drain Voltage (V)
0.4
0.6
0.8
1.0
1.2
Source-Drain Diode Forward Voltage
ISSUE 2 - JUNE 2003
5
SEMICONDUCTORS
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