DISCRETE SEMICONDUCTORS
DATA SHEET
M3D071
BCV63; BCV63B
NPN general purpose double
transistors
Product data sheet
Supersedes data of 1997 Mar 10
1999 May 21
NXP Semiconductors
Product data sheet
NPN general purpose double transistors
FEATURES
•
Low current (max. 100 mA)
•
Low voltage (max. 30 and 6 V).
APPLICATIONS
•
General purpose switching and amplification
•
For use in Schmitt-trigger applications.
DESCRIPTION
NPN double transistor in a SOT143B plastic package.
PNP complement: BCV64B.
MARKING
TYPE NUMBER
BCV63
BCV63B
MARKING CODE
D95
D96
Top view
1
2
handbook, halfpage
4
BCV63; BCV63B
PINNING
PIN
1
2
3
4
collector TR1
emitter TR1 and TR2
base TR2
DESCRIPTION
collector TR2 and base TR1
3
2
1
TR1
TR2
3
MAM316
4
Fig.1 Simplified outline (SOT143B) and symbol.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
V
CBO
TR1
TR2
V
CEO
collector-emitter voltage
TR1
TR2
V
EBO
I
C
I
CM
I
B
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on a printed-circuit board.
emitter-base voltage
collector current (DC)
peak collector current
base current (DC)
total power dissipation
storage temperature
junction temperature
operating ambient temperature
T
amb
≤
25
°C;
note 1
open collector
open base
−
−
−
−
−
−
−
−65
−
−65
30
6
6
100
200
100
250
+150
150
+150
V
V
V
mA
mA
mA
mW
°C
°C
°C
PARAMETER
collector-base voltage
CONDITIONS
open emitter
−
−
30
6
V
V
MIN.
MAX.
UNIT
1999 May 21
2
NXP Semiconductors
Product data sheet
NPN general purpose double transistors
THERMAL CHARACTERISTICS
SYMBOL
R
th j-a
Note
1. Transistor mounted on a printed-circuit board.
CHARACTERISTICS
T
amb
= 25
°C
unless otherwise specified.
SYMBOL
I
CBO
h
FE
PARAMETER
collector cut-off current
DC current gain
BCV63 TR1
BCV63 TR2
BCV63B TR1
BCV63B TR2
V
CEsat
I
C
= 2 mA; V
CE
= 5 V
I
C
= 2 mA; V
CE
= 700 mV; note 1
I
C
= 2 mA; V
CE
= 5 V
I
C
= 2 mA; V
CE
= 700 mV; note 1
110
110
200
200
−
−
−
I
C
= 10 mA; I
B
= 0.5 mA; note 2
I
C
= 100 mA; I
B
= 5 mA; note 2
−
I
C
= 2 mA; V
CE
= 5 V; note 3
I
C
= 10 mA; V
CE
= 5 V; note 3
I
C
= 2 mA; V
CE
= 700 mV; note 3
I
E
= i
e
= 0; V
CB
= 10 V; f = 1 MHz
−
I
C
= 10 mA; V
CE
= 5 V; f = 100 MHz
100
600
−
−
−
CONDITIONS
I
E
= 0; V
CB
= 30 V
I
E
= 0; V
CB
= 30 V; T
j
= 150
°C
PARAMETER
thermal resistance from junction to ambient
CONDITIONS
note 1
BCV63; BCV63B
VALUE
500
UNIT
K/W
MIN.
−
−
TYP.
−
−
−
−
−
−
75
250
250
700
−850
650
−
700
4
−
MAX.
15
5
800
800
450
450
300
650
−
−
−
750
820
−
−
−
UNIT
nA
μA
collector-emitter saturation voltage I
C
= 10 mA; I
B
= 0.5 mA
collector-emitter saturation voltage I
C
= 100 mA; I
B
= 5 mA
TR1
TR2
mV
mV
mV
mV
mV
mV
mV
mV
pF
MHz
V
BEsat
base-emitter saturation voltage
base-emitter saturation voltage
TR1
V
BE
base-emitter voltage
TR1
TR1
TR2
C
c
f
T
collector capacitance
TR1
transition frequency
TR1
Notes
1. Group selection will be done on TR1. Due to matched dies, h
FE
values for TR2 are the same as for TR1.
2. V
BEsat
decreases by approximately 1.7 mV/K with increasing temperature.
3. V
BE
decreases by approximately 2 mV/K with increasing temperature.
1999 May 21
3
NXP Semiconductors
Product data sheet
NPN general purpose double transistors
APPLICATION INFORMATION
BCV63; BCV63B
handbook, halfpage
Rc
1
4
R1
Rc
2
Vo
TR2
3
R2
TR1
3
Vi
MGD829
Fig.2 Schmitt-trigger application.
1999 May 21
4
NXP Semiconductors
Product data sheet
NPN general purpose double transistors
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
BCV63; BCV63B
SOT143B
D
B
E
A
X
y
v
M
A
HE
e
bp
w
M
B
4
3
Q
A
A1
c
1
b1
e1
2
Lp
detail X
0
1
scale
2 mm
DIMENSIONS (mm are the original dimensions)
UNIT
mm
A
1.1
0.9
A1
max
0.1
bp
0.48
0.38
b1
0.88
0.78
c
0.15
0.09
D
3.0
2.8
E
1.4
1.2
e
1.9
e1
1.7
HE
2.5
2.1
Lp
0.45
0.15
Q
0.55
0.45
v
0.2
w
0.1
y
0.1
OUTLINE
VERSION
SOT143B
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
1999 May 21
5
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