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HN2A01FU-Y(T5LCK,F

Description
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon
CategoryDiscrete semiconductor    The transistor   
File Size241KB,3 Pages
ManufacturerToshiba Semiconductor
Websitehttp://toshiba-semicon-storage.com/
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HN2A01FU-Y(T5LCK,F Overview

Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 2-Element, PNP, Silicon

HN2A01FU-Y(T5LCK,F Parametric

Parameter NameAttribute value
MakerToshiba Semiconductor
package instructionSMALL OUTLINE, R-PDSO-G6
Reach Compliance Codeunknown
Maximum collector current (IC)0.15 A
Collector-based maximum capacity7 pF
Collector-emitter maximum voltage50 V
ConfigurationSEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE)120
JESD-30 codeR-PDSO-G6
Number of components2
Number of terminals6
Maximum operating temperature125 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typePNP
Maximum power consumption environment0.2 W
Maximum power dissipation(Abs)0.2 W
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsAMPLIFIER
Transistor component materialsSILICON
Nominal transition frequency (fT)80 MHz
VCEsat-Max0.3 V
HN2A01FU
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN2A01FU
Audio Frequency General Purpose Amplifier Applications
Small package (dual type)
High voltage and high current : V
CEO
=
−50V,
I
C
=
−150mA
(max)
: h
FE
= 120 to 400
High h
FE
:
Excellent h
FE
linearity
h
FE
(I
C
=
−0.1mA)
/ (I
C
=
−2mA)
= 0.95 (typ.)
Unit: mm
(Q1, Q2 Common)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Junction temperature
Storage temperature range
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
*
T
j
T
stg
Rating
−50
−50
−5
−150
−30
200
125
−55
to 125
Unit
V
V
V
mA
mA
mW
°C
°C
JEDEC
JEITA
Note: Using continuously under heavy loads (e.g. the application of high
TOSHIBA
2-2J1B
temperature/current/voltage and the significant change in
Weight: 6.8 mg (typ.)
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
* Total rating
Electrical Characteristics
(Ta = 25°C) (Q1, Q2 Common)
Characteristics
Collector cut-off current
Emitter cut-off current
DC current gain
Collector-emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE (Note)
V
CE (sat)
f
T
C
ob
Test
Circuit
Test Condition
V
CB
=
−50V,
I
E
= 0
V
EB
=
−5V,
I
C
= 0
V
CE
=
−6V,
I
C
=
−2mA
I
C
=
−100mA,
I
B
=
−10mA
V
CE
=
−10V,
I
C
=
−1mA
V
CB
=
−10V,
I
E
= 0, f = 1MH
z
Min
120
80
Typ.
−0.1
4
Max
−0.1
−0.1
400
−0.3
7
Unit
μA
μA
V
MH
z
pF
Note: h
FE
classification
Y(Y): 120 to 240, GR(G): 200 to 400
( ) marking symbol
Marking
Equivalent Circuit
(top view)
Start of commercial production
1992-01
1
2014-03-01

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Maker Toshiba Semiconductor Toshiba Semiconductor - Toshiba Semiconductor Toshiba Semiconductor
package instruction SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6 - SMALL OUTLINE, R-PDSO-G6 SMALL OUTLINE, R-PDSO-G6
Reach Compliance Code unknown unknown - unknown unknow
Maximum collector current (IC) 0.15 A 0.15 A - 0.15 A 0.15 A
Collector-based maximum capacity 7 pF 7 pF - 7 pF 7 pF
Collector-emitter maximum voltage 50 V 50 V - 50 V 50 V
Configuration SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS - SEPARATE, 2 ELEMENTS SEPARATE, 2 ELEMENTS
Minimum DC current gain (hFE) 120 200 - 120 200
JESD-30 code R-PDSO-G6 R-PDSO-G6 - R-PDSO-G6 R-PDSO-G6
Number of components 2 2 - 2 2
Number of terminals 6 6 - 6 6
Maximum operating temperature 125 °C 125 °C - 125 °C 125 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY - PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR - RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE - SMALL OUTLINE SMALL OUTLINE
Polarity/channel type PNP PNP - PNP PNP
Maximum power consumption environment 0.2 W 0.2 W - 0.2 W 0.2 W
Maximum power dissipation(Abs) 0.2 W 0.2 W - 0.2 W 0.2 W
surface mount YES YES - YES YES
Terminal form GULL WING GULL WING - GULL WING GULL WING
Terminal location DUAL DUAL - DUAL DUAL
transistor applications AMPLIFIER AMPLIFIER - AMPLIFIER AMPLIFIER
Transistor component materials SILICON SILICON - SILICON SILICON
Nominal transition frequency (fT) 80 MHz 80 MHz - 80 MHz 80 MHz
VCEsat-Max 0.3 V 0.3 V - 0.3 V 0.3 V

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