BAT41
Vishay Semiconductors
formerly General Semiconductor
Schottky Diode
DO-204AH (DO-35 Glass)
Features
• For general purpose applications
• This diode features low turn-on voltage and high
breakdown voltage. This device is protected by a
PN junction guard ring against excessive voltage,
such as electrostatic discharges
• This diode is also available in a MiniMELF case
with type designation LL41
Mechanical Data
Dimensions in inches
and (millimeters)
Case:
DO-35 Glass Case
Weight:
approx. 0.13g
Packaging Codes/Options:
D7/10K per 13” reel (52mm tape), 20K/box
D8/10K per Ammo tape (52mm tape), 20K/box
Maximum Ratings & Thermal Characteristics
Parameter
Repetitive Peak Reverse Voltage
Forward Continuous Current at T
amb
= 25°C
Repetitive Peak Forward Current
at t
p
< 1s, @ < 0.5, T
amb
= 25°C
Surge Forward Current at t
p
= 10 ms, T
amb
= 25°C
Power Dissipation at T
amb
= 25°C
Thermal Resistance Juntion to Ambient Air
Junction Temperature
Ambient Operating Temperature Range
Storage Temperature Range
Symbol
V
RRM
I
F
I
FRM
I
FSM
P
tot
R
θJA
T
j
T
amb
T
S
Ratings at 25°C ambient temperature unless otherwise specified.
Value
100
100
(1)
350
(1)
750
(1)
400
(1)
300
(1)
125
–65 to +125
–65 to +150
Unit
V
mA
mA
A
mW
°C/W
°C
°C
°C
Electrical Characteristics
(T
Parameter
Reverse Breakdown Voltage
(2)
Leakage Curren t
(2)
Forward Voltage
(2)
Capacitance
Reverse Recovery Time
J
= 25°C unless otherwise noted)
Symbol
V
(BR)R
I
R
V
F
C
tot
t
rr
Test Condition
I
R =
100µA
V
R
= 50V, Tj = 25°C
V
R
= 50V, Tj = 100°C
I
F
= 1mA
I
F
= 200mA
V
R
= 1 V, f = 1MHz
I
F
= 10 mA, I
R =
10mA
I
rr
= 1 mA, R
L
= 100
Ω
Min
100
—
—
—
—
—
—
Typ
110
—
—
0.40
—
2
5
Max
—
100
20
0.45
1.0
—
—
Unit
V
nA
µA
V
pF
ns
Notes:
(1) Valid provided that leads at a distance of 4mm from case are kept at ambient temperature
(2) Pulse test, t
p
= 300µs
Document Number 88136
07-Feb-02
www.vishay.com
1
ARM Technology
京公网安备 11010802033920号
EEWORLD
