VISHAY
BCW60 Series
Vishay Semiconductors
Small Signal Transistors (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors
• Suited for low level, low noise, low frequency
applications in hybrid cicuits.
• Low Current, Low Voltage.
• As complementary types, BCW61 Series PNP
transistors are recommended.
18822
2
1
1
B
3
C 3
E 2
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Marking:
BCW60A = AA
BCW60B = AB
BCW60C = AC
BCW60D = AD
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Pinning:
1 = Base, 2 = Emitter, 3 = Collector
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector-emitter voltage
Emitter-base voltage
Collector current (DC)
Collector peak current
Base current (DC)
Power dissipation
T
A
= 25 °C
Test condition
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
P
tot
Value
32
32
5.0
100
200
50
250
Unit
V
V
V
mA
mA
mA
mW
Maximum Thermal Resistance
Parameter
Maximum junction temperature
Storage temperature range
Thermal resistance junction to
ambient air
1)
Test condition
Symbol
T
j
T
S
R
θJA
Value
150
- 65 to + 150
500
1)
Unit
°C
°C
°C/W
Mounted on FR-4 printed-circuit board.
Document Number 85116
Rev. 1.2, 19-Aug-04
www.vishay.com
1
BCW60 Series
Vishay Semiconductors
Electrical DC Characteristics
Parameter
DC current gain
Test condition
V
CE
= 5 V, I
C
= 10
µA
Part
BCW60A
BCW60B
BCW60C
BCW60D
V
CE
= 5 V, I
C
= 2 mA
BCW60A
BCW60B
BCW60C
BCW60D
V
CE
= 1 V, I
C
= 50 mA
BCW60A
BCW60B
BCW60C
BCW60D
Collector - emitter saturation
voltage
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
Base - emitter saturation voltage I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
Base - emitter voltage
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 10
µA
V
CE
= 1 V, I
C
= 50 mA
Collector-emitter cut-off current
V
CE
= 32 V, V
BE
= 0 V
V
CE
= 32 V, V
BE
= 0 V,
T
A
= 150 °C
Emitter - base cut - off current
V
EB
= 4 V, I
C
= 0
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
BE
V
BE
V
BE
I
CES
I
CES
i
EBO
20
40
100
120
180
250
380
50
70
90
100
50
100
600
700
550
650
520
780
20
20
20
350
550
850
220
310
460
630
Min
Typ
Max
VISHAY
Unit
mV
mV
mV
mV
mV
mV
mV
nA
µA
nA
1050
750
Electrical AC Characteristics
Parameter
Gain - bandwidth product
Collector - base capacitance
Emitter - base capacitance
Noise figure
Test condition
V
CE
= 5 V, I
C
= 10 mA,
f = 100 MHz
V
CB
= 10 V, f = 1 MHz, I
E
= 0
V
EB
= 0.5 V, f = 1 MHz, I
C
= 0
V
CE
= 5 V, I
C
= 200
µA,
R
S
= 2 kΩ, f = 1 kHz,
B = 200 Hz
V
CE
= 5 V, I
C
= 2 mA, f = 1.0 kHz BCW60A
BCW60B
BCW60C
BCW60D
Turn - on time
R
L
= 990
Ω
(see fig.1)
V
CC
= 10 V, I
C
= 10 mA,
I
B(on)
= - I
B(off)
= 1 mA
R
L
= 990
Ω
(see fig.1)
V
CC
= 10 V, I
C
= 10 mA,
I
B(on)
= - I
B(off)
= 1 mA
Part
Symbol
f
T
C
CBO
C
EBO
F
Min
100
Typ
250
2.5
8
2
6
Max
Unit
MHz
pF
pF
dB
Small signal current gain
h
fe
h
fe
h
fe
h
fe
t
on
200
260
330
520
85
150
ns
Turn - off time
t
off
480
800
ns
www.vishay.com
2
Document Number 85116
Rev. 1.2, 19-Aug-04
BCW60 Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85116
Rev. 1.2, 19-Aug-04
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