VISHAY
BCX70 Series
Vishay Semiconductors
Small Signal Transistor (NPN)
Features
• NPN Silicon Epitaxial Planar Transistors for
switching and AF amplifier applications.
• Suited for low level, low noise, low frequency
applications in hybrid circuits.
• Low current, low voltage.
• As complementary types, BCX71 Series PNP
transistors are recommended.
2
1
1
B
3
18822
C 3
E 2
Mechanical Data
Case:
SOT-23 Plastic case
Weight:
approx. 8.8 mg
Marking:
BCX70G = AG
BCX70H = AH
BCX70J = AJ
BCX70K = AK
Packaging Codes/Options:
GS18 / 10 k per 13" reel (8 mm tape), 10 k/box
GS08 / 3 k per 7" reel (8 mm tape), 15 k/box
Pinning:
1 = Base, 2 = Emitter, 3 = Collector
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Parameter
Collector - base voltage
Collector - emitter voltage
Emitter - base voltage
Collector current
Base peak current
Power dissipation
Test condition
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
BM
P
tot
Value
45
45
5.0
200
50
250
Unit
V
V
V
mA
mA
mW
Maximum Thermal Resistance
Parameter
Thermal resistance junction to
ambient air
Junction temperature
Storage temperature range
1)
Test condition
Symbol
R
θJA
T
j
T
S
Value
500
1)
150
- 65 to + 150
Unit
°C/W
°C
°C
Mounted on FR-4 printed-circuit board.
Document Number 85119
Rev. 1.2, 19-Aug-04
www.vishay.com
1
BCX70 Series
Vishay Semiconductors
Electrical DC Characteristics
Parameter
DC current gain
Test condition
V
CE
= 5 V, I
C
= 10
µA
Part
BCX70G
BCX70H
BCX70J
BCX70K
V
CE
= 5 V, I
C
= 2 mA
BCX70G
BCX70H
BCX70J
BCX70K
V
CE
= 1 V, I
C
= 50 mA
BCX70G
BCX70H
BCX70J
BCX70K
Collector - emitte saturation
voltage
I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
Base - emitter saturation voltage I
C
= 10 mA, I
B
= 0.25 mA
I
C
= 50 mA, I
B
= 1.25 mA
Base - emitter voltage
V
CE
= 5 V, I
C
= 2 mA
V
CE
= 5 V, I
C
= 2
µA
V
CE
= 1 V, I
C
= 50 mA
Collector-base cut-off current
V
CB
= 45 V, V
BE
= 0 V
V
CB
= 45 V, V
BE
= 0 V,
T
A
= 150 °C
Emitter-base cut-off current
V
EB
= 4 V, I
C
= 0
Symbol
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
V
CEsat
V
CEsat
V
BEsat
V
BEsat
V
BE
V
BE
V
BE
I
CBO
I
CBO
I
EBO
30
40
100
120
180
250
380
50
70
90
100
50
100
600
700
550
650
520
780
20
20
20
350
550
850
220
310
460
630
Min
Typ
Max
VISHAY
Unit
mV
mV
mV
mV
mV
mV
mV
nA
µA
nA
1050
750
Electrical AC Characteristics
Parameter
Gain - bandwidth product
Collector - base capacitance
Emitter - base capacitance
Noise figure
Test condition
V
CE
= 5 V, I
C
= 10 mA,
f = 100 MHz
V
CB
= 10 V, f = 1 MHz, I
E
= 0
V
CB
= 0.5 V, f = 1 MHz, I
C
= 0
V
CE
= 1 V, I
C
= 200
µA,
R
S
= 2 kΩ, f = 1 kHz,
B = 200 Hz
V
CE
= 5 V, I
C
= 2 mA, f = 1 kHz
BCX70G
BCX70H
BCX70J
BCX70K
Turn - on time (see fig.1)
V
Cc
= 10 V, I
C
= 10 mA,
I
B(on)
= - I
B(off)
= 1 mA,
R
L
= 990
Ω
V
Cc
= 10 V, I
C
= 10 mA,
I
B(on)
= - I
B(off)
= 1 mA,
R
L
= 990
Ω
Part
Symbol
f
T
C
CBO
C
EBO
F
Min
100
Typ
250
2.5
8
2
6
Max
Unit
MHz
pF
pF
dB
Small signall current gain
h
fe
h
fe
h
fe
h
fe
t
on
200
260
330
520
85
150
ns
Turn - off time (see fig.1)
t
off
480
800
ns
www.vishay.com
2
Document Number 85119
Rev. 1.2, 19-Aug-04
BCX70 Series
Vishay Semiconductors
Ozone Depleting Substances Policy Statement
It is the policy of
Vishay Semiconductor GmbH
to
1. Meet all present and future national and international statutory requirements.
VISHAY
2. Regularly and continuously improve the performance of our products, processes, distribution and
operatingsystems with respect to their impact on the health and safety of our employees and the public, as
well as their impact on the environment.
It is particular concern to control or eliminate releases of those substances into the atmosphere which are
known as ozone depleting substances (ODSs).
The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs
and forbid their use within the next ten years. Various national and international initiatives are pressing for an
earlier ban on these substances.
Vishay Semiconductor GmbH
has been able to use its policy of continuous improvements to eliminate the
use of ODSs listed in the following documents.
1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments
respectively
2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental
Protection Agency (EPA) in the USA
3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively.
Vishay Semiconductor GmbH
can certify that our semiconductors are not manufactured with ozone depleting
substances and do not contain such substances.
We reserve the right to make changes to improve technical design
and may do so without further notice.
Parameters can vary in different applications. All operating parameters must be validated for each
customer application by the customer. Should the buyer use Vishay Semiconductors products for any
unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all
claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal
damage, injury or death associated with such unintended or unauthorized use.
Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany
Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423
www.vishay.com
4
Document Number 85119
Rev. 1.2, 19-Aug-04
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