Transistors
Manufacturer’s Code Log
AGT
ANA
ADV
AVX
BNS
CRY
DLS
Agilent Technologies
Analog Devices Inc.
Advanced Micro Devices
AVX
Bourns
Crydom Company
Dallas Semiconductor
EPC
FSC
FJS
GIS
HVP
IRF
INT
EPCOS
Fairchild Semiconductor
Fuji Semiconductor
General Semiconductor
High Voltage Power
International Rectifier
Intersil
LIT
MOT
NSC
NTE
ONS
PHA
SDK
Littelfuse
Motorola Semiconductor
National Semiconductor
NTE Electronics
ON Semiconductor
Philips Semiconductors
SanDisk
SEM
TIS
WAS
XCR
XLX
SemiKron
Texas Instruments
Winslow Adaptics
Xicor
Xilinx
Bipolar Transistors (Continued)
Plastic-Encapsulated Multiple Transistors — Quad Surface Mount (Case 751B-SO-16) — NPN/PNP)
Stock
No.
568-4953
568-4960
Mfr.’s
Code
ONS
ONS
Mfr.’s
Type
MMPQ2222A
MMPQ6700
Configuration
NPN
NPN/PNP
V
(BR)CEO
40
40
V
(BR)CBO
75
40
hFE @ I
C
Min.
40
70
The following table is a listing of the most popular multiple devices available in the plastic SOIC surface-mount package. These devices are available in NPN, PNP, and NPN/PNP configurations.
hFE @ I
C
(mA)
500.0
10.0
f
T
@ I
C
(MHz) Min.
200
200
f
T
@ I
C
(mA)
20.0
10.0
No. of
Leads
16
16
Case
Outline
751B-05
751B-05
Package
SOIC
SOIC
EACH
1.21
.95
Small Signal Bipolar Transistors
Leaded
Stock
No.
950-3018
950-3030
950-3032
950-3000
950-3004
950-3038
950-3042
950-3044
950-3046
950-3002
950-3048
950-3006
950-3008
950-3021
950-3023
950-3025
Mfr.’s
Code
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
Mfr.’s
Type
BC547A
BC547B
BC547C
2N3904
2N4401
BC337-40
BC557A
BC557B
BC557C
2N3906
MPSA56
2N4403
MPS2907A
BC327-16
BC327-25
BC327-40
Configuration
NPN
NPN
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
PNP
V
CEO
(V)
45
45
45
40
40
45
45
45
45
40
80
40
40
45
45
45
I
C
(mA)
100
100
100
200
600
800
100
100
100
200
500
600
600
800
800
800
hFE
Min.
—
—
—
100
—
250
—
—
—
100
—
—
—
100
160
250
hFE
Typ.
220
330
600
—
100
400
220
330
600
—
100
100
100
160
250
400
hFE
Max.
—
—
—
300
300
630
—
—
—
300
—
300
300
250
400
630
@V
CE
/I
C
5 V/2 mA
5 V/2 mA
5 V/2 mA
1 V/10 mA
1 V/150 mA
1 V/300 mA
5 V/2 mA
5 V/2 mA
5 V/2 mA
1 V/10 mA
1 V/100 mA
1 V/150 mA
10 V/150 mA
1 V/300 mA
1 V/300 mA
1 V/300 mA
No. of
Leads
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
3
Package
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
EACH
.09
.09
.09
.11
.13
.09
.09
.09
.09
.11
.28
.13
.13
.10
.09
.09
Plastic
950-1034
950-1035
950-1038
950-1036
950-1037
950-1039
GIS
GIS
GIS
GIS
GIS
GIS
BCW60B
BCW60D
BCX70K
BCW61B
BCW61D
BCX71K
NPN
NPN
NPN
PNP
PNP
PNP
32
32
45
32
32
45
100
100
200
100
100
200
180
380
380
180
380
380
—
—
—
—
—
—
310
630
630
310
630
630
5 V/2 mA
5 V/2 mA
5 V/2 mA
5 V/2 mA
5 V/2 mA
5 V/2 mA
3
3
3
3
3
3
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
.09
.09
.08
.09
.09
.08
Surface-Mount
950-3012
950-3033
950-3028
950-3016
950-3037
950-3043
950-3045
950-3047
950-3049
950-3022
950-3019
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
GIS
MMBT3904
BC817-16
BC817-40
MMBT2222A
BCW66G
BC857B
BC857C
BC807-16
BC807-25
MMBT4403
MMBT2907A
NPN
NPN
NPN
NPN
NPN
PNP
PNP
PNP
PNP
PNP
PNP
40
45
45
40
45
45
45
45
45
40
40
200
500
500
600
800
100
100
500
500
600
600
100
100
250
—
160
—
—
100
160
—
—
—
—
—
100
—
330
600
—
—
100
100
300
250
600
300
400
—
—
250
400
300
300
1 V/10 mA
1 V/100 mA
1 V/100 mA
10 V/150 mA
1 V/100 mA
5 V/2 mA
5 V/2 mA
1 V/100 mA
1 V/100 mA
1 V/150 mA
10 V/150 mA
3
3
3
3
3
3
3
3
3
3
3
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
.09
.18
.14
.12
.28
.10
.13
.13
.13
.12
.12
18
Field Effect Transistors
Small Signal JFETs
JFETs operate in the depletion mode. They are available in both P- and N-channel and are offered in both Through-hole
and Surface-Mount Packages. Applications include general-purpose amplified, switches and choppers, and RF amplifiers
and mixers. These devices are economical and very rugged. The drain and source are interchangeable on many typical
FETs.
Surface-Mount Choppers/Switches JFETs
Stock
No.
568-1902
Mfr.’s
Code
ONS
Mfr.’s
Type
MMBF4393LT1
Pinout: 1 — Drain, 2 — Source, 3 — Gate (Case 318-07 — TO-236AB (SOT-23)) — N-Channel
The following is a listing of small-signal surface-mount JFET devices intended for switching and chopper applications.
Marking
6G
R
DS(on)
(Ω)
Max.
100
t
off
ns
Max.
50
V
(BR)GSS
(V)
30.0
V
GS(off)
(V)
Min.
0.5
V
GS(off)
(V)
Max.
3.0
I
DSS
(mA)
Min.
5.0
I
DSS
(mA)
Max.
30
No. of
Leads
3
Case
Outline
318-08
Package
SOT-23 (TO-236AB)
EACH
.24
Surface-Mount Choppers/Switches JFETs
568-7123
568-2263
ONS
ONS
MMBFJ175LT1
MMBFJ177LT1
Pinout: 1 — Drain, 2 — Source, 3 — Gate (Case 318-07 — TO-236AB (SOT-23) —P-Channel)
6W
6Y
125
300
—
—
3.0
–30.0
6.0
0.8
30.0
2.5
7.0
1.5
60
20
3
3
318-08
318-08
SOT-23 (TO-236AB)
SOT-23 (TO-236AB)
.21
.31
JFET High-Frequency Amplifiers (Case 29-04 — TO-226AA (TO-92) — N-Channel)
Stock
No.
568-1096
568-1097
568-1883
568-1884
1
Typical.
The following is a listing of small signal JFETs that are intended for high-frequency applications. These are candidates for VHF/UHF oscillators, mixers and front-end amplifiers.
Mfr.’s
Code
ONS
ONS
ONS
ONS
Mfr.’s
Type
2N5485
2N5486
J309
J310
R
e
Y
fs
@ f
mmho
Min.
3.0
3.5
12.0
1
12.0
1
R
e
Y
fs
@ f
(kHz)
400
400
100
100
R
e
Y
os
@ f
µmho
Max.
100
100
250
1
250
1
R
e
Y
os
@ f
(kHz)
400
400
100
100
C
iss
(pF)
Max.
5.0
5.0
7.5
7.5
C
rss
(pF)
Min.
1.0
1.0
2.5
2.5
V
(BR)GSS
V
(BR)GDO
(V)
Min.
4.0
4.0
1.5
1
1.5
1
N
F
@ R
G
=1 K
dB
Max.
400.00
400.00
100.00
100.00
N
F
@ R
G
=1 K
f
(MHz)
25.0
25.0
25.0
25.0
V
GS(off)
(V)
Min.
0.5
2.0
1.0
2.0
V
GS(off)
(V)
Max.
4.0
6.0
4.0
6.5
I
DSS
(mA)
Min.
4
8
12
24
I
DSS
(mA)
Max.
10
20
30
60
No. of
Leads
3
3
3
3
Case
Outline
29-11
29-11
29-11
29-11
Package
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
TO-92 (TO-226AA)
EACH
.33
.33
.30
.33
848
ALLIED
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