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S9014-D-BP

Description
Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3
CategoryDiscrete semiconductor    The transistor   
File Size266KB,2 Pages
ManufacturerMicro Commercial Components (MCC)
Environmental Compliance  
Download Datasheet Parametric View All

S9014-D-BP Overview

Small Signal Bipolar Transistor, 0.1A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, ROHS COMPLIANT, PLASTIC PACKAGE-3

S9014-D-BP Parametric

Parameter NameAttribute value
Is it lead-free?Lead free
Is it Rohs certified?conform to
MakerMicro Commercial Components (MCC)
Parts packaging codeTO-92
package instructionCYLINDRICAL, O-PBCY-T3
Contacts3
Reach Compliance Codecompliant
ECCN codeEAR99
Maximum collector current (IC)0.1 A
Collector-emitter maximum voltage45 V
ConfigurationSINGLE
Minimum DC current gain (hFE)400
JEDEC-95 codeTO-92
JESD-30 codeO-PBCY-T3
JESD-609 codee3
Humidity sensitivity level1
Number of components1
Number of terminals3
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeROUND
Package formCYLINDRICAL
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Polarity/channel typeNPN
Certification statusNot Qualified
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationBOTTOM
Maximum time at peak reflow temperatureNOT SPECIFIED
Transistor component materialsSILICON
Nominal transition frequency (fT)150 MHz
MCC
Micro Commercial Components
TM
  omponents
20736 Marilla
Street Chatsworth

  !"#
$ %    !"#
S9014-B
S9014-C
S9014-D
Features
TO-92 Plastic-Encapsulate Transistors
Capable of 0.4Watts(Tamb=25
O
C) of Power Dissipation.
Collector-current 0.1A
Collector-base Voltage 50V
Operating and storage junction temperature range: -55
O
C to +150
O
C
Marking : S9014
Lead Free Finish/RoHS Compliant ("P" Suffix designates
RoHS Compliant. See ordering information)
Epoxy meets UL 94 V-0 flammability rating
Moisure Sensitivity Level 1
Halogen
free available upon request by adding suffix "-HF"
NPN Silicon
Transistors
TO-92
A
E
Electrical Characteristics @ 25
O
C Unless Otherwise Specified
Symbol
Parameter
Collector-Base Breakdown Voltage
(I
C
=100uAdc, I
E
=0)
Collector-Emitter Breakdown Voltage
(I
C
=0.1mAdc, I
B
=0)
Emitter-Base Breakdown Voltage
(I
E
=100uAdc, I
C
=0)
Collector Cutoff Current
(V
CB
=50Vdc, I
E
=0)
Collector Cutoff Current
(V
CE
=35Vdc, I
B
=0)
Emitter Cutoff Current
(V
EB
=3.0Vdc, I
C
=0)
DC Current Gain
(I
C
=1.0mAdc, V
CE
=5.0Vdc)
Collector-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=5.0mAdc)
Base-Emitter Saturation Voltage
(I
C
=100mAdc, I
B
=5.0mAdc)
Transistor Frequency
(I
C
=10mAdc, V
CE
=5.0Vdc, f=30MHz)
Min
50
45
5.0
---
---
---
Max
---
---
---
0.1
0.1
0.1
Units
Vdc
Vdc
Vdc
uAdc
uAdc
uAdc
D
B
OFF CHARACTERISTICS
V
(BR)CBO
V
(BR)CEO
V
(BR)EBO
I
CBO
I
CEO
I
EBO
C
ON CHARACTERISTICS
h
FE
V
CE(sat)
V
BE(sat)
60
---
---
1000
0.3
1.0
---
Vdc
E
E
B
C
B
Vdc
G
C
SMALL-SIGNAL CHARACTERISTICS
f
T
150
---
MHz
DIM
A
B
C
D
E
G
STRAIGHT LEAD BENT LEAD
BULK PACK
AMMO PACK
DIMENSIONS
CLASSIFICATION OF H
FE
Rank
Range
B
100-300
C
200-600
D
400-1000
INCHES
MIN
.175
.175
.500
.016
.135
.095
.173
MM
MAX
.185
.185
---
.020
.145
.105
.220
MIN
4.45
4.45
12.70
0.41
3.43
2.42
4.40
MAX
4.70
4.70
---
0.63
3.68
2.67
5.60
NOTE
Straight Lead
Bent Lead
* For ammo packing detailed specification, click here to visit our website
of product packaging for details.
www.mccsemi.com
Revision:
D
1 of 2
2013/01/01
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