EEWORLDEEWORLDEEWORLD

Part Number

Search

GBL01C2

Description
Bridge Rectifier Diode, 4A, 100V V(RRM),
CategoryDiscrete semiconductor    diode   
File Size192KB,4 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
Download Datasheet Parametric View All

GBL01C2 Overview

Bridge Rectifier Diode, 4A, 100V V(RRM),

GBL01C2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresUL RECOGNIZED
Minimum breakdown voltage100 V
Shell connectionISOLATED
ConfigurationBRIDGE, 4 ELEMENTS
Diode component materialsSILICON
Diode typeBRIDGE RECTIFIER DIODE
Maximum forward voltage (VF)1 V
JESD-30 codeR-PSIP-T4
JESD-609 codee3
Maximum non-repetitive peak forward current150 A
Number of components4
Phase1
Number of terminals4
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Maximum output current3 A
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formIN-LINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
Maximum repetitive peak reverse voltage100 V
surface mountNO
Terminal surfaceMatte Tin (Sn)
Terminal formTHROUGH-HOLE
Terminal locationSINGLE
Maximum time at peak reflow temperatureNOT SPECIFIED
GBL005 thru GBL10
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Glass passivated junction
- Ideal for printed circuit board
- High case dielectric strength
- Typical IR less than 0.1μA
- UL Recognized File # E-326243
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Glass Passivated Single Phase Bridge Rectifiers
GBL
MECHANICAL DATA
Case:
GBL
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
As marked
Weight:
2 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
@T
C
=50
o
C
@T
A
=40
o
C
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Rating for fusing (t<8.3ms)
Maximum instantaneous forward voltage (Note 1)
@2A
@4A
Maximum reverse current @ rated VR
Typical junction capabitance
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: Pulse test with PW=300μs, 1% duty cycle
T
J
=25
o
C
T
J
=125 C
o
SYMBOL
V
RRM
V
RMS
V
DC
I
F(AV)
GBL
005
50
35
50
GBL
01
100
70
100
GBL
02
200
140
200
GBL
04
400
280
400
4
3
150
93
1.0
1.1
5
500
GBL
06
600
420
600
GBL
08
800
560
800
GBL
10
1000
700
1000
Unit
V
V
V
A
I
FSM
I
2
t
V
F
A
A
2
s
V
I
R
Cj
R
θjC
R
θjL
R
θjA
T
J
T
STG
95
μA
40
pF
O
8
13
32
- 55 to +150
- 55 to +150
C/W
O
O
C
C
Document Number: DS_D1408053
Version: I14

Technical ResourceMore

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

Index Files: 2629  2071  1  2562  779  53  42  1  52  16 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号