IMS1223S-35M datasheet, PDF - EEWORLD Datasheet

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IMS1223S-35M: DescriptionStandard SRAM, 1KX4, 35ns, CMOS, CDIP18,; Categorystorage storage; File Size282KB，8 Pages; ManufacturerInmos Corporation

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IMS1223S-35M Overview

Standard SRAM, 1KX4, 35ns, CMOS, CDIP18,

IMS1223S-35M Parametric

Parameter Name	Attribute value
Is it Rohs certified?	incompatible
Maker	Inmos Corporation
Reach Compliance Code	unknown
Maximum access time	35 ns
I/O type	COMMON
JESD-30 code	R-XDIP-T18
JESD-609 code	e0
memory density	4096 bit
Memory IC Type	STANDARD SRAM
memory width	4
Number of terminals	18
word count	1024 words
character code	1000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	125 °C
Minimum operating temperature	-55 °C
organize	1KX4
Output characteristics	3-STATE
Package body material	CERAMIC
encapsulated code	DIP
Encapsulate equivalent code	DIP18,.3
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
power supply	5 V
Certification status	Not Qualified
Filter level	38535Q/M;38534H;883B
Maximum standby current	0.005 A
Minimum standby current	4.5 V
Maximum slew rate	0.11 mA
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL

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IMS1223S-35M Related Products

	IMS1223S-35M	IMS1223S-45M	IMS1223A-35M	IMS1223A-45M
Description	Standard SRAM, 1KX4, 35ns, CMOS, CDIP18,	Standard SRAM, 1KX4, 45ns, CMOS, CDIP18,	Standard SRAM, 1KX4, 35ns, CMOS, CDFP18,	Standard SRAM, 1KX4, 45ns, CMOS, CDFP18,
Is it Rohs certified?	incompatible	incompatible	incompatible	incompatible
Maker	Inmos Corporation	Inmos Corporation	Inmos Corporation	Inmos Corporation
Reach Compliance Code	unknown	unknown	unknown	unknown
Maximum access time	35 ns	45 ns	35 ns	45 ns
I/O type	COMMON	COMMON	COMMON	COMMON
JESD-30 code	R-XDIP-T18	R-XDIP-T18	R-XDFP-F18	R-XDFP-F18
JESD-609 code	e0	e0	e0	e0
memory density	4096 bit	4096 bit	4096 bit	4096 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	4	4	4	4
Number of terminals	18	18	18	18
word count	1024 words	1024 words	1024 words	1024 words
character code	1000	1000	1000	1000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	125 °C	125 °C	125 °C	125 °C
Minimum operating temperature	-55 °C	-55 °C	-55 °C	-55 °C
organize	1KX4	1KX4	1KX4	1KX4
Output characteristics	3-STATE	3-STATE	3-STATE	3-STATE
Package body material	CERAMIC	CERAMIC	CERAMIC	CERAMIC
encapsulated code	DIP	DIP	DFP	DFP
Encapsulate equivalent code	DIP18,.3	DIP18,.3	FL18,.3	FL18,.3
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	IN-LINE	FLATPACK	FLATPACK
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL
power supply	5 V	5 V	5 V	5 V
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Filter level	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B	38535Q/M;38534H;883B
Maximum standby current	0.005 A	0.005 A	0.005 A	0.005 A
Minimum standby current	4.5 V	4.5 V	4.5 V	4.5 V
Maximum slew rate	0.11 mA	0.11 mA	0.11 mA	0.11 mA
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V
surface mount	NO	NO	YES	YES
technology	CMOS	CMOS	CMOS	CMOS
Temperature level	MILITARY	MILITARY	MILITARY	MILITARY
Terminal surface	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)	Tin/Lead (Sn/Pb)
Terminal form	THROUGH-HOLE	THROUGH-HOLE	FLAT	FLAT
Terminal pitch	2.54 mm	2.54 mm	1.27 mm	1.27 mm
Terminal location	DUAL	DUAL	DUAL	DUAL

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