UPD43256BCZ-85LL datasheet, PDF

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UPD43256BCZ-85LL: DescriptionStandard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28; Categorystorage storage; File Size185KB，24 Pages; ManufacturerNEC Electronics

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UPD43256BCZ-85LL Overview

Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28

UPD43256BCZ-85LL Parametric

Parameter Name	Attribute value
Maker	NEC Electronics
Parts packaging code	DIP
package instruction	DIP,
Contacts	28
Reach Compliance Code	unknown
ECCN code	EAR99
Maximum access time	85 ns
Other features	BATTERY BACKUP
JESD-30 code	R-PDIP-T28
memory density	262144 bit
Memory IC Type	STANDARD SRAM
memory width	8
Number of functions	1
Number of terminals	28
word count	32768 words
character code	32000
Operating mode	ASYNCHRONOUS
Maximum operating temperature	70 °C
Minimum operating temperature
organize	32KX8
Package body material	PLASTIC/EPOXY
encapsulated code	DIP
Package shape	RECTANGULAR
Package form	IN-LINE
Parallel/Serial	PARALLEL
Certification status	Not Qualified
Maximum seat height	5.72 mm
Maximum supply voltage (Vsup)	5.5 V
Minimum supply voltage (Vsup)	4.5 V
Nominal supply voltage (Vsup)	5 V
surface mount	NO
technology	CMOS
Temperature level	COMMERCIAL
Terminal form	THROUGH-HOLE
Terminal pitch	2.54 mm
Terminal location	DUAL
width	15.24 mm

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DATA SHEET

MOS INTEGRATED CIRCUIT

PD43256B

256K-BIT CMOS STATIC RAM

32K-WORD BY 8-BIT

Description

The

PD43256B is a high speed, low power, and 262, 144 bits (32,768 words by 8 bits) CMOS static RAM.

Battery backup is available (L, LL, A, and B versions). And A and B versions are wide voltage operations.

The

PD43256B is packed in 28-pin plastic DIP, 28-pin plastic SOP and 28-pin plastic TSOP (I).

Features

• 32,768 words by 8 bits organization

• Fast access time: 70, 85, 100, 120, 150 ns (MAX.)

• Wide voltage range (A version: V

= 3.0 to 5.5 V, B version: V

= 2.7 to 5.5 V)

• 2 V data retention

• OE input for easy application

Operating

supply voltage

4.5 to 5.5

Operating

temperature

°C

0 to 70

Standby

supply current

A (MAX.)

3.0 to 5.5

2.7 to 5.5

Data retention

supply current

Note 1

A (MAX.)

Part number

Access time

ns (MAX.)

70, 85

85, 100

Note 2

, 120

Note 2

100, 120, 150

PD43256B-L

PD43256B-LL

PD43256B-A

PD43256B-B

Note 2

Notes 1.

≤

40 ˚C, V

= 3 V

Access time : 85 ns (MAX.) (V

= 4.5 to 5.5 V)

Version X and P

This data sheet can be applied to the version X and P. Each version is identified with its lot number. Letter X in

the fifth character position in a lot number signifies version X, letter P, version P.

JAPAN

D43256B

Lot number

The information in this document is subject to change without notice.

Document No. M10770EJ9V0DS00 (9th edition)

Date Published May 1997 N

Printed in Japan

The mark

shows major revised points.

1990, 1993, 1994

UPD43256BCZ-85LL Related Products

	UPD43256BCZ-85LL	UPD43256BGW-85LL-9JL	UPD43256BGU-85LL	UPD43256BGW-85LL-9KL	UPD43256BGW-A85-9JL	UPD43256BCZ-85L	UPD43256BGW-B10-9KL	UPD43256BGW-B15-9KL
Description	Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP1-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 0.450 INCH, PLASTIC, SOP-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, REVERSE, TSOP1-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, TSOP1-28	Standard SRAM, 32KX8, 85ns, CMOS, PDIP28, 0.600 INCH, PLASTIC, DIP-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, REVERSE, TSOP1-28	Standard SRAM, 32KX8, 85ns, CMOS, PDSO28, 8 X 13.40 MM, PLASTIC, REVERSE, TSOP1-28
Parts packaging code	DIP	TSOP	SOIC	TSOP	TSOP	DIP	TSOP	TSOP
package instruction	DIP,	TSOP1,	SOP,	TSOP1-R,	TSOP1,	DIP,	TSOP1-R,	TSOP1-R,
Contacts	28	28	28	28	28	28	28	28
Reach Compliance Code	unknown	compliant	compliant	compliant	compliant	unknown	compliant	compliant
ECCN code	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99	EAR99
Maximum access time	85 ns	85 ns	85 ns	85 ns	85 ns	85 ns	85 ns	85 ns
Other features	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP	BATTERY BACKUP
JESD-30 code	R-PDIP-T28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDSO-G28	R-PDIP-T28	R-PDSO-G28	R-PDSO-G28
memory density	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit	262144 bit
Memory IC Type	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM	STANDARD SRAM
memory width	8	8	8	8	8	8	8	8
Number of functions	1	1	1	1	1	1	1	1
Number of terminals	28	28	28	28	28	28	28	28
word count	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words	32768 words
character code	32000	32000	32000	32000	32000	32000	32000	32000
Operating mode	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS	ASYNCHRONOUS
Maximum operating temperature	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C	70 °C
organize	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8	32KX8
Package body material	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY	PLASTIC/EPOXY
encapsulated code	DIP	TSOP1	SOP	TSOP1-R	TSOP1	DIP	TSOP1-R	TSOP1-R
Package shape	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR	RECTANGULAR
Package form	IN-LINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE	IN-LINE	SMALL OUTLINE, THIN PROFILE	SMALL OUTLINE, THIN PROFILE
Parallel/Serial	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL	PARALLEL
Certification status	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified	Not Qualified
Maximum seat height	5.72 mm	1.2 mm	2.95 mm	1.2 mm	1.2 mm	5.72 mm	1.2 mm	1.2 mm
Maximum supply voltage (Vsup)	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V	5.5 V
Minimum supply voltage (Vsup)	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V	4.5 V
Nominal supply voltage (Vsup)	5 V	5 V	5 V	5 V	5 V	5 V	5 V	5 V
surface mount	NO	YES	YES	YES	YES	NO	YES	YES
technology	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS	CMOS
Temperature level	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL	COMMERCIAL
Terminal form	THROUGH-HOLE	GULL WING	GULL WING	GULL WING	GULL WING	THROUGH-HOLE	GULL WING	GULL WING
Terminal pitch	2.54 mm	0.55 mm	1.27 mm	0.55 mm	0.55 mm	2.54 mm	0.55 mm	0.55 mm
Terminal location	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL	DUAL
width	15.24 mm	8 mm	8.4 mm	8 mm	8 mm	15.24 mm	8 mm	8 mm
Maker	NEC Electronics	NEC Electronics	-	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics	NEC Electronics
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	-	incompatible	incompatible
JESD-609 code	-	e0	e0	e0	e0	-	e0	e0
length	-	11.8 mm	18 mm	11.8 mm	11.8 mm	-	11.8 mm	11.8 mm
Peak Reflow Temperature (Celsius)	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED
Terminal surface	-	TIN LEAD	TIN LEAD	TIN LEAD	TIN LEAD	-	TIN LEAD	TIN LEAD
Maximum time at peak reflow temperature	-	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	NOT SPECIFIED	-	NOT SPECIFIED	NOT SPECIFIED

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