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SMAJ400AM2

Description
Trans Voltage Suppressor Diode, 400W, 400V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size176KB,5 Pages
ManufacturerTaiwan Semiconductor
Websitehttp://www.taiwansemi.com/
Environmental Compliance
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SMAJ400AM2 Overview

Trans Voltage Suppressor Diode, 400W, 400V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

SMAJ400AM2 Parametric

Parameter NameAttribute value
Is it Rohs certified?conform to
MakerTaiwan Semiconductor
package instructionR-PDSO-C2
Reach Compliance Codecompliant
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage494 V
Minimum breakdown voltage447 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
JESD-609 codee3
Humidity sensitivity level1
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-55 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation1 W
Maximum repetitive peak reverse voltage400 V
surface mountYES
technologyAVALANCHE
Terminal surfacePURE TIN
Terminal formC BEND
Terminal locationDUAL
Maximum time at peak reflow temperatureNOT SPECIFIED

SMAJ400AM2 Preview

SMAJ HV SERIES
Taiwan Semiconductor
CREAT BY ART
FEATURES
- Low profile package
- Ideal for automated placement
- Glass passivated junction
- Built-in strain relief
- Excellent clamping capability
- Fast response time: Typically less than
1.0ps from 0 volt to BV min
- Moisture sensitivity level : level 1, per J-STD-020
- Compliant to RoHS Directive 2011/65/EU and
in accordance to WEEE 2002/96/EC
- Halogen-free according to IEC 61249-2-21 definition
Suface Mount Transient Voltage Suppressor
DO-214AC(SMA)
MECHANICAL DATA
Case:
DO-214AC (SMA)
Molding compound, UL flammability classification rating 94V-0
Base P/N with suffix "G" on packing code - Green compound (halogen-free)
Terminal:
Matte tin plated leads, solderable per JESD22-B102
Meet JESD 201 class 1A whisker test
Polarity:
Indicated by cathode band
Weight:
0.06 g (approximately)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS
(T
A
=25
o
C unless otherwise noted)
PARAMETER
Peak power dissipation at T
A
=25
o
C, Tp=1ms(Note 1)
Steady state power dissipation
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
Maximum Instantaneous Forward Voltage at 25 A for
Unidirectional Only
Operating junction temperature range
Storage temperature range
SYMBOL
P
PK
P
D
I
FSM
V
F
T
J
T
STG
o
VALUE
400
1
40
3.5
- 55 to +150
- 55 to +150
UNIT
Watts
Watts
A
Volts
O
O
C
C
Note 1: Non-repetitive Current Pulse Per Fig. 3 and Derated above T
A
=25 C Per Fig. 2
ORDERING INFORMATION
PART NO.
PACKING CODE
R3
R2
M2
Suffix "G"
GREEN COMPOUND
CODE
SMAJxxxx
(Note 1)
SMA
SMA
SMA
1,800 / 7" Plastic reel
7,500 / 13" Paper reel
7,500 / 13" Plastic reel
PACKAGE
PACKING
Note 1: "xxxx" defines voltage from 200V (SMAJ200A) to 400V (SMAJ400A)
EXAMPLE
PREFERRED P/N
SMAJ200A R3
SMAJ200A R3G
PART NO.
SMAJ200A
SMAJ200A
PACKING CODE
R3
R3
G
Green compound
GREEN COMPOUND
CODE
DESCRIPTION
Document Number: DS_D1407003
Version:E14
SMAJ HV SERIES
Taiwan Semiconductor
RATINGS AND CHARACTERISTICS CURVES
(TA=25
o
C unless otherwise noted)
FIG. 1 PEAK PULSE POWER RATING CURVE
100
NON-REPETITIVE
PULSE WAVEFORM
SHOWN in FIG.3
10
125
PEAK PULSE POWER(P
PP
) OR CURRENT (I
PP
)
A
DERATING IN PERCENTAGE (%)
FIG.2 PULSE DERATING CURVE
P
PPM
, PEAK PULSE POWER, KW
100
75
50
1
25
0.1
0.1
1
10
100
1000
10000
tp, PULSE WIDTH, (μs)
0
0
25
50
75
100
125
150
175
200
T
A
, AMBIENT TEMPERATURE (
o
C)
FIG. 3 CLAMPING POWER PULSE WAVEFORM
140
PEAK PULSE CURRENT (%)
120
100
80
60
40
20
0
0
td
0.5
1
1.5
2
t, TIME ms
2.5
3
3.5
4
PULSE WIDTH(td) is DEFINED
as the POINT WHERE the PEAK
CURRENT DECAYS to 50% OF IPPM
FIG. 4 MAXIMUM NON-REPETITIVE FORWARD SURGE
CURRENT UNIDIRECTIONAL ONLY
IFSM, PEAK FORWARD SURGE CURRENT (A)
50
8.3ms Single Half Sine Wave
tr=10μs
Peak Value
I
PPM
40
Half Value-I
PPM
/2
10/1000μs, WAVEFORM
as DEFINED by R.E.A.
30
20
10
0
1
10
NUMBER OF CYCLES AT 60 Hz
100
FIG. 5 TYPICAL JUNCTION CAPACITANCE
10000
CJ, JUNCTION CAPACITANCE (pF)
A
1000
MEASURED AT
ZERO BIAS
100
f=1.0MHz
Vsig=50mVp-p
10
1
10
V(
BR
), BREAKDOWN VOLTAGE (V)
100
MEASURED at
STAND-OFF
VOLTAGE,Vwm
Document Number: DS_D1407003
Version:E14
SMAJ HV SERIES
Taiwan Semiconductor
Working Peak
Reverse
Voltage
V
WM
(V)
200
220
250
300
350
400
Breakdown Voltage
VBR (V)
at I
T
Min
224
246
279
335
391
447
Max
247
272
309
371
432
494
Test
Current
IT
(mA)
1
1
1
1
1
1
324
356
405
486
567
648
Maximum
Clamping
Voltage at I
PPM
Vc(V)
Maximum
Maximum
Reverse Leakage
Peak Pulse
Surge Current
@ V
WM
I
PPM
(A)
I
D
(μA)
1.2
1.1
1.0
0.8
0.7
0.6
1
1
1
1
1
1
Device
Device
Marking
Code
SV
SX
SZ
TE
TG
TK
SMAJ200A
SMAJ220A
SMAJ250A
SMAJ300A
SMAJ350A
SMAJ400A
Notes:
1. Non-repetitive current pulse, per Fig. 3 and derated above T
A
=25
o
C per Fig. 2
2. Measure on 8.3ms single half sine-wave duty cycle=4 pulses per minutes maximum
3. Peak pulse power waveform is 10/1000
μs
Document Number: DS_D1407003
Version:E14
SMAJ HV SERIES
Taiwan Semiconductor
PACKAGE OUTLINE DIMENSIONS
DO-214AC(SMA)
DIM.
A
B
C
D
E
F
G
H
Unit (mm)
Min
1.27
4.06
2.29
1.99
0.90
4.95
0.10
0.15
Max
1.58
4.60
2.83
2.50
1.41
5.33
0.20
0.31
Unit (inch)
Min
0.050
0.160
0.090
0.078
0.035
0.195
0.004
0.006
Max
0.062
0.181
0.111
0.098
0.056
0.210
0.008
0.012
SUGGESTED PAD LAYOUT
Symbol
A
B
C
D
E
Unit (mm)
1.68
1.52
3.93
2.41
5.45
Unit (inch)
0.066
0.060
0.155
0.095
0.215
MARKING DIAGRAM
P/N =
G=
YW =
F=
Device Marking Code
Green Compound
Date Code
Factory Code
Document Number: DS_D1407003
Version:E14
SMAJ HV SERIES
Taiwan Semiconductor
CREAT BY ART
Notice
Specifications of the products displayed herein are subject to change without notice. TSC or anyone on its behalf,
assumes no responsibility or liability for any errors inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied,to
any intellectual property rights is granted by this document. Except as provided in TSC's terms and conditions of
sale for such products, TSC assumes no liability whatsoever, and disclaims any express or implied warranty,
relating to sale and/or use of TSC products including liability or warranties relating to fitness for a particular purpose,
merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or seling these products for use in such applications do so at their own risk and agree to fully
indemnify TSC for any damages resulting from such improper use or sale.
Document Number: DS_D1407003
Version:E14

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SMAJ400AM2 SMAJ400AR2 SMAJ400AR3 SMAJ300AM2 SMAJ300AR3 SMAJ220AM2 SMAJ220AR3 SMAJ250AM2 SMAJ250AR2
Description Trans Voltage Suppressor Diode, 400W, 400V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 400V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 400V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 300V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 300V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 220V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 220V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 250V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN Trans Voltage Suppressor Diode, 400W, 250V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN
Is it Rohs certified? conform to conform to conform to conform to conform to conform to conform to conform to conform to
Maker Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor Taiwan Semiconductor
package instruction R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code compliant compliant compliant compliant compliant compli compli compli compli
ECCN code EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99 EAR99
Other features EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage 494 V 494 V 494 V 371 V 371 V 272 V 272 V 309 V 309 V
Minimum breakdown voltage 447 V 447 V 447 V 335 V 335 V 246 V 246 V 279 V 279 V
Configuration SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC DO-214AC
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
JESD-609 code e3 e3 e3 e3 e3 e3 e3 e3 e3
Humidity sensitivity level 1 1 1 1 1 1 1 1 1
Maximum non-repetitive peak reverse power dissipation 400 W 400 W 400 W 400 W 400 W 400 W 400 W 400 W 400 W
Number of components 1 1 1 1 1 1 1 1 1
Number of terminals 2 2 2 2 2 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C -55 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Peak Reflow Temperature (Celsius) NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 1 W 1 W 1 W 1 W 1 W 1 W 1 W 1 W 1 W
Maximum repetitive peak reverse voltage 400 V 400 V 400 V 300 V 300 V 220 V 220 V 250 V 250 V
surface mount YES YES YES YES YES YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal surface PURE TIN PURE TIN PURE TIN PURE TIN PURE TIN PURE TIN PURE TIN PURE TIN PURE TIN
Terminal form C BEND C BEND C BEND C BEND C BEND C BEND C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL DUAL
Maximum time at peak reflow temperature NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED NOT SPECIFIED
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