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SMAJ400A-E

Description
Trans Voltage Suppressor Diode, 400W, 400V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN
CategoryDiscrete semiconductor    diode   
File Size1MB,5 Pages
ManufacturerLittelfuse
Websitehttp://www.littelfuse.com
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SMAJ400A-E Overview

Trans Voltage Suppressor Diode, 400W, 400V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN

SMAJ400A-E Parametric

Parameter NameAttribute value
MakerLittelfuse
package instructionR-PDSO-C2
Reach Compliance Codeunknown
ECCN codeEAR99
Other featuresEXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage494 V
Minimum breakdown voltage447 V
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeTRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 codeDO-214AC
JESD-30 codeR-PDSO-C2
Maximum non-repetitive peak reverse power dissipation400 W
Number of components1
Number of terminals2
Maximum operating temperature150 °C
Minimum operating temperature-65 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
polarityUNIDIRECTIONAL
Maximum power dissipation3.3 W
GuidelineIEC-61000-4-2; IEC-61000-4-4
Maximum repetitive peak reverse voltage400 V
surface mountYES
technologyAVALANCHE
Terminal formC BEND
Terminal locationDUAL
TVS Diodes
Surface Mount – 400W > SMAJ-E Series
SMAJ series
RoHS
SMAJ-E Series
Uni-directional
Description
Pb
e3
The SMAJ-E series is designed specifically to protect
sensitive electronic equipment from voltage transients
induced by lightning and other transient voltage events.
Features
• Excellent clamping
capability
• For surface mounted
applications to optimize
board space
• Low profile package
• Typical failure mode is
short from over-specified
voltage or current
• Whisker test is conducted
based on JEDEC
JESD201A per its table 4a
and 4c
• IEC-61000-4-2 ESD
30kV(Air), 30kV (Contact)
• ESD protection of data
lines in accordance with
IEC 61000-4-2
• EFT protection of data
lines in accordance with
IEC 61000-4-4
• Built-in strain relief
• 400W Peak pulse power
capability at 10/1000µs
waveform, repetition rate
(duty cycle): 0.01%
• Fast response time:
typically less than 1.0ps
from 0 Volts to V
BR
min
• Glass passivated junction
• Low inductance
• High temperature
to reflow soldering
guaranteed: 260°C/40sec
• V
BR
@ T
J
= V
BR
@25°C
x (1+
α
T x (T
J
- 25))
(
α
T:Temperature
Coefficient, typical value
is 0.1%)
• EPI silicon technology
• Meet MSL level1, per
J-STD-020C, LF maximun
peak of 260
°
C
• Matte tin lead–free Plated
• Halogen free and RoHS
compliant
• Pb-free E3 means 2nd
level interconnect is
Pb-free and the terminal
finish material is tin(Sn)
(IPC/JEDEC J-STD-
609A.01)
Maximum Ratings and Thermal Characteristics
(T
A
=25
O
C unless otherwise noted)
Parameter
Peak Pulse Power Dissipation at
T
A
=25ºC by 10/1000µs Waveform
(Fig.2)(Note 1), (Note 2)
Power Dissipation on Infinite Heat
Sink at T
L
=50
O
C
Peak Forward Surge Current, 8.3ms
Single Half Sine Wave (Note 3)
Maximum Instantaneous Forward
Voltage at 25A for Unidirectional
Only
Operating Temperature Range
Storage Temperature Range
Typical Thermal Resistance Junction
to Lead
Typical Thermal Resistance Junction
to Ambient
Symbol
P
PPM
P
D
I
FSM
V
F
T
J
T
STG
R
θJL
R
θJA
Value
400
3.3
60
3.5
-65 to 150
-65 to 175
30
120
Unit
W
W
A
V
°C
°C
°C/W
°C/W
Notes:
1. Non-repetitive current pulse, per Fig.4 and derated above T
J
(initial) =25ºC per Fig. 3.
2. Mounted on 5.0x5.0mm copper pad to each terminal.
3. Measured on 8.3ms single half sine wave or equivalent square wave for unidirectional
device only.
Functional Diagram
Bi-directional
Applications
TVS devices are ideal for the protection of I/O Interfaces,
V
CC
bus and other vulnerable circuits used in Telecom,
Computer, Industrial and Consumer electronic applications.
Cathode
Uni-directional
Anode
©2016 Littelfuse, Inc.
Specifications are subject to change without notice.
Revised: 06/29/16

SMAJ400A-E Related Products

SMAJ400A-E SMAJ300A-E SMAJ350A-E SMAJ600A-E
Description Trans Voltage Suppressor Diode, 400W, 400V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN TVS DIODE SMA SUF MT TR TVS DIODE SMA SUF MT TR Trans Voltage Suppressor Diode, 400W, 600V V(RWM), Unidirectional, 1 Element, Silicon, DO-214AC, SMA, 2 PIN
Maker Littelfuse Littelfuse Littelfuse Littelfuse
package instruction R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Reach Compliance Code unknown unknown unknown unknow
ECCN code EAR99 EAR99 EAR99 EAR99
Other features EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY EXCELLENT CLAMPING CAPABILITY
Maximum breakdown voltage 494 V 371 V 432 V 741 V
Minimum breakdown voltage 447 V 335 V 391 V 670 V
Configuration SINGLE SINGLE SINGLE SINGLE
Diode component materials SILICON SILICON SILICON SILICON
Diode type TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE TRANS VOLTAGE SUPPRESSOR DIODE
JEDEC-95 code DO-214AC DO-214AC DO-214AC DO-214AC
JESD-30 code R-PDSO-C2 R-PDSO-C2 R-PDSO-C2 R-PDSO-C2
Maximum non-repetitive peak reverse power dissipation 400 W 400 W 400 W 400 W
Number of components 1 1 1 1
Number of terminals 2 2 2 2
Maximum operating temperature 150 °C 150 °C 150 °C 150 °C
Minimum operating temperature -65 °C -65 °C -65 °C -65 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
polarity UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL UNIDIRECTIONAL
Maximum power dissipation 3.3 W 3.3 W 3.3 W 3.3 W
Guideline IEC-61000-4-2; IEC-61000-4-4 IEC-61000-4-2; IEC-61000-4-4 IEC-61000-4-2; IEC-61000-4-4 IEC-61000-4-2; IEC-61000-4-4
Maximum repetitive peak reverse voltage 400 V 300 V 350 V 600 V
surface mount YES YES YES YES
technology AVALANCHE AVALANCHE AVALANCHE AVALANCHE
Terminal form C BEND C BEND C BEND C BEND
Terminal location DUAL DUAL DUAL DUAL

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