BZX84C2V4ET1 Series
Zener Voltage Regulators
225 mW SOT−23 Surface Mount
This series of Zener diodes is offered in the convenient, surface
mount plastic SOT−23 package. These devices are designed to provide
voltage regulation with minimum space requirement. They are well
suited for applications such as cellular phones, hand held portables,
and high density PC boards.
Specification Features
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•
•
•
•
•
•
•
225 mW Rating on FR−4 or FR−5 Board
Zener Breakdown Voltage Range − 2.4 V to 75 V
Package Designed for Optimal Automated Board Assembly
Small Package Size for High Density Applications
ESD Rating of Class 3 (>16 kV) per Human Body Model
Peak Power − 225 W (8
X
20
ms)
Pb−Free Package is Available
3
Cathode
1
Anode
3
1
2
SOT−23
CASE 318
STYLE 8
Mechanical Characteristics
CASE:
Void-free, transfer-molded, thermosetting plastic case
FINISH:
Corrosion resistant finish, easily solderable
MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES:
MARKING DIAGRAM
260°C for 10 Seconds
POLARITY:
Cathode indicated by polarity band
FLAMMABILITY RATING:
UL 94 V−0
MAXIMUM RATINGS
Rating
Peak Power Dissipation @ 20
ms
(Note 1)
@ T
L
≤
25°C
Total Power Dissipation on FR−5 Board,
(Note 2) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
Total Power Dissipation on Alumina
Substrate, (Note 3) @ T
A
= 25°C
Derated above 25°C
Thermal Resistance,
Junction−to−Ambient
Junction and Storage
Temperature Range
Symbol
P
pk
P
D
225
1.8
R
qJA
P
D
300
2.4
R
qJA
T
J
, T
stg
417
−65 to
+150
mW
mW/°C
°C/W
°C
556
mW
mW/°C
°C/W
BZX84CxxxET3
Max
225
Unit
Watts
xxxM
xxx = Specific Device Code
M = Date Code
ORDERING INFORMATION
Device
BZX84CxxxET1
BZX84CxxxET1G
Package
SOT−23
SOT−23
(Pb−Free)
SOT−23
Shipping
†
3000/Tape & Reel
3000/Tape & Reel
10,000/Tape & Reel
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
DEVICE MARKING INFORMATION
See specific marking information in the device marking
column of the Electrical Characteristics table on page 2 of
this data sheet.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
1. Nonrepetitive current pulse per Figure 9.
2. FR−5 = 1.0 X 0.75 X 0.62 in.
3. Alumina = 0.4 X 0.3 X 0.024 in, 99.5% alumina.
©
Semiconductor Components Industries, LLC, 2004
1
July, 2004 − Rev. 3
Publication Order Number:
BZX84C2V4ET1/D
BZX84C2V4ET1 Series
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C
unless otherwise noted, V
F
= 0.95 V Max. @ I
F
= 10 mA)
Symbol
V
Z
I
ZT
Z
ZT
I
R
V
R
I
F
V
F
QV
Z
C
Parameter
Reverse Zener Voltage @ I
ZT
Reverse Current
Maximum Zener Impedance @ I
ZT
Reverse Leakage Current @ V
R
Reverse Voltage
Forward Current
Forward Voltage @ I
F
Maximum Temperature Coefficient of V
Z
Max. Capacitance @ V
R
= 0 and f = 1 MHz
V
Z
V
R
I
R
V
F
I
ZT
V
I
F
I
Zener Voltage Regulator
ELECTRICAL CHARACTERISTICS
(Pinout: 1-Anode, 2-No Connection, 3-Cathode) (T
A
= 25°C unless otherwise noted, V
F
= 0.90 V Max. @ I
F
= 10 mA)
(Devices listed in
bold, italic
are ON Semiconductor Preferred devices.)
V
Z1
(V)
@ I
ZT1
= 5 mA
(Note 4)
Device
BZX84C3V3ET1
Device
Mark-
ing
BA4
Min
3.1
Nom
3.3
Max
3.5
V
Z2
(V)
@ I
ZT2
= 1 mA
(Note 4)
Min
2.3
Max
2.9
V
Z3
(V)
@ I
ZT3
=20 mA
(Note 4)
Min
3.6
Max
4.2
Max
Reverse
Leakage
Current
V
I
R
@
R
mA
(V)
5
1
q
VZ
C (pF)
(mV/k)
@
@ I
ZT1
=5 mA
V
R
= 0
f=
Min Max 1 MHz
−3.5
0
450
Z
ZT1
(W)
@ I
ZT1
=
5 mA
95
Z
ZT2
(W)
@ I
ZT2
=
1 mA
600
Z
ZT3
(W)
@
I
ZT3
=
20 mA
40
BZX84C4V7ET1
BZX84C5V1ET1
BZX84C5V6ET1
BZX84C6V2ET1, G*
BZX84C6V8ET1
BZX84C7V5ET1
BZX84C10ET1
BA9
BB1
BB2
BB3
BB4
BB5
BB8
4.4
4.8
5.2
5.8
6.4
7
9.4
4.7
5.1
5.6
6.2
6.8
7.5
10
5
5.4
6
6.6
7.2
7.9
10.6
80
60
40
10
15
15
20
3.7
4.2
4.8
5.6
6.3
6.9
9.3
4.7
5.3
6
6.6
7.2
7.9
10.6
500
480
400
150
80
80
150
4.5
5
5.2
5.8
6.4
7
9.4
5.4
5.9
6.3
6.8
7.4
8
10.7
15
15
10
6
6
6
10
3
2
1
3
2
1
0.2
2
2
2
4
4
5
7
−3.5
−2.7
−2.0
0.4
1.2
2.5
4.5
0.2
1.2
2.5
3.7
4.5
5.3
8.0
260
225
200
185
155
140
130
BZX84C12ET1
BZX84C15ET1
BZX84C16ET1
BC1
BC3
BC4
11.4
14.3
15.3
12
15
16
12.7
15.8
17.1
25
30
40
11.2
13.7
15.2
12.7
15.5
17
150
200
200
11.4
13.9
15.4
12.9
15.7
17.2
10
20
20
0.1
0.05
0.05
8
10.5
11.2
6.0
9.2
10.4
10.0
13.0
14.0
130
110
105
BZX84C18ET1
BZX84C24ET1
BC5
BC8
16.8
22.8
18
24
19.1
25.6
45
70
16.7
22.7
19
25.5
225
250
16.9
22.9
19.2
25.7
20
25
0.05
0.05
12.6
16.8
12.4
18.4
16.0
22.0
100
80
Device
BZX84C27ET1
BZX84C43ET1
Device
Mark-
ing
BC9
BK6
V
Z1
Below
@ I
ZT1
= 2 mA
Min
25.1
40
Nom
27
43
Max
28.9
46
Z
ZT1
Below
@ I
ZT1
=
2 mA
80
150
V
Z2
Below
@ I
ZT2
=
0.1 mA
Min
25
39.7
Max
28.9
46
Z
ZT2
Below
@ I
ZT4
=
0.5 mA
300
375
V
Z3
Below
@ I
ZT3
= 10 m
A
Min
25.2
40.1
Max
29.3
46.5
Z
ZT3
Below
@ I
ZT3
=
10 mA
45
80
Max
Reverse
Leakage
Current
V
I
R
@
R
mA
(V)
0.05
0.05
18.9
30.1
q
VZ
(mV/k) Be-
low
@ I
ZT1
= 2
mA
Min
21.4
37.6
Max
25.3
46.6
C (pF)
@ V
R
=0
f=
1 MHz
70
40
* The “G” suffix indicates Pb−Free package available.
4. Zener voltage is measured with a pulse test current I
Z
at an ambient temperature of 25°C
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2
BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
8
7
6
5
4
3
2
1
0
V
Z
@ I
ZT
TYPICAL T
C
VALUES
100
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
TYPICAL T
C
VALUES
θ
VZ, TEMPERATURE COEFFICIENT (mV/
°
C)
V
Z
@ I
ZT
10
−1
−2
−3
2
3
4
5
6
7
8
9
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
11
12
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
Figure 1. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
Figure 2. Temperature Coefficients
(Temperature Range − 55°C to +150°C)
1000
Z ZT, DYNAMIC IMPEDANCE (
Ω
)
I
Z
= 1 mA
T
J
= 255C
I
Z(AC)
= 0.1 I
Z(DC)
f = 1 kHz
1000
IF, FORWARD CURRENT (mA)
75 V (MMBZ5267BLT1)
91 V (MMBZ5270BLT1)
100
5 mA
20 mA
10
100
10
150°C
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE
100
1
0.4
0.5
75°C 25°C
0°C
1.1
1.2
0.6
0.7
0.8
0.9
1.0
V
F
, FORWARD VOLTAGE (V)
Figure 3. Effect of Zener Voltage on
Zener Impedance
Figure 4. Typical Forward Voltage
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3
BZX84C2V4ET1 Series
TYPICAL CHARACTERISTICS
1000
0 V BIAS
C, CAPACITANCE (pF)
1 V BIAS
T
A
= 25°C
1000
I R , LEAKAGE CURRENT (
µ
A)
100
10
1
0.1
+150°C
100
BIAS AT
50% OF V
Z
NOM
10
0.01
+ 25°C
−55°C
0
10
20
30
40
50
60
70
V
Z
, NOMINAL ZENER VOLTAGE (V)
80
90
0.001
0.0001
1
1
10
V
Z
, NOMINAL ZENER VOLTAGE (V)
100
0.00001
Figure 5. Typical Capacitance
Figure 6. Typical Leakage Current
100
I Z, ZENER CURRENT (mA)
T
A
= 25°C
I Z , ZENER CURRENT (mA)
10
100
T
A
= 25°C
10
1
1
0.1
0.1
0.01
0
2
4
6
8
V
Z
, ZENER VOLTAGE (V)
10
12
0.01
10
30
50
70
V
Z
, ZENER VOLTAGE (V)
90
Figure 7. Zener Voltage versus Zener Current
(V
Z
Up to 12 V)
100
% OF PEAK PULSE CURRENT
90
80
70
60
50
40
30
20
10
0
0
20
40
t
P
t
r
Figure 8. Zener Voltage versus Zener Current
(12 V to 91 V)
PEAK VALUE I
RSM
@ 8
ms
PULSE WIDTH (t
P
) IS DEFINED
AS THAT POINT WHERE THE
PEAK CURRENT DECAY = 8
ms
HALF VALUE I
RSM
/2 @ 20
ms
60
80
t, TIME (ms)
Figure 9. 8
×
20
ms
Pulse Waveform
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4
BZX84C2V4ET1 Series
PACKAGE DIMENSIONS
SOT−23
TO−236AB
CASE 318−09
ISSUE AJ
A
L
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3. MAXIUMUM LEAD THICKNESS INCLUDES LEAD
FINISH THICKNESS. MINIMUM LEAD THICKNESS
IS THE MINIMUM THICKNESS OF BASE
MATERIAL.
4. 318−01, −02, AND −06 OBSOLETE, NEW
STANDARD 318−09.
INCHES
MIN
MAX
0.1102 0.1197
0.0472 0.0551
0.0385 0.0498
0.0140 0.0200
0.0670 0.0826
0.0040 0.0098
0.0034 0.0070
0.0180 0.0236
0.0350 0.0401
0.0830 0.0984
0.0177 0.0236
MILLIMETERS
MIN
MAX
2.80
3.04
1.20
1.40
0.99
1.26
0.36
0.50
1.70
2.10
0.10
0.25
0.085
0.177
0.45
0.60
0.89
1.02
2.10
2.50
0.45
0.60
3
1
2
B
S
V
G
C
D
H
K
J
DIM
A
B
C
D
G
H
J
K
L
S
V
STYLE 8:
PIN 1. ANODE
2. NO CONNECTION
3. CATHODE
SOLDERING FOOTPRINT*
0.95
0.037
0.95
0.037
2.0
0.079
0.9
0.035
0.8
0.031
SCALE 10:1
mm
inches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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5
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