1N3292B datasheet, PDF - EEWORLD Datasheet

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1N3292B: Description100 A, 500 V, SILICON, RECTIFIER DIODE, DO-8; Categorysemiconductor Discrete semiconductor; File Size126KB，3 Pages; ManufacturerDigitron; Websitehttp://www.digitroncorp.com

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100 A, 500 V, SILICON, RECTIFIER DIODE, DO-8

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DIGITRON SEMICONDUCTORS

1N3288(A)-1N3297(A)

MAXIMUM RATINGS

Maximum peak

repetitive reverse

voltage

Part number

V

RRM

T

C

= -40° to +200°C

V

1N3288

1N3289

1N3290

1N3291

1N3292

1N3293

1N3294

1N3295

1N3296

1N3288A

1N3289A

1N3290A

1N3291A

1N3292B

1N3293A

1N3294A

1N3295A

1N3296A

100

200

300

400

500

600

800

1000

1200

Maximum non-

repetitive peak

reverse voltage

V

RSM

T

C

= 25° to 200°C

V

200

300

400

525

650

800

1050

1300

1600

Maximum direct

reverse voltage

V

R

T

C

= -40° to +200

V

100

200

300

400

500

600

800

1000

1200

Maximum peak reverse

current

I

RRM

T

C

= 130°C

mA

24

21

17

13

11

9

HIGH POWER RECTIFIER

ELECTRICAL CHARACTERISTICS

Characteristics

Average forward current

Maximum surge current

Symbol

I

F(AV)

1500A

1600A

I

FSM

1800A

1900A

11500 A

2

s

Maximum I

2

t for fusing

It

Maximum I t for individual device fusing

Maximum I

2

√t

for individual device fusing

(4)

Maximum peak forward voltage

I

2

√t

V

FM

2

Non-A

suffix

A suffix

100A

2200A

2300A

2600A

2700A

24000 A

2

s

22000 A

2

s

34000 A

2

s

31000 A

2

s

340000 A

2

√s

Test Conditions

180° sinusoidal conduction, T

C

= 130°C

Half cycle, 50Hz

sine wave

Half cycle, 60Hz

sine wave

Half cycle, 50Hz

sine wave

Half cycle, 60Hz

sine wave

t = 10ms

t = 8.3ms

t = 10ms

t = 8.3ms

Following any rated

load condition and

with rated V

RRM

applied

Following any rated

load condition and

with V

RRM

applied

following surge = 0.

With rated V

RRM

applied following

surge, initial

T

J

= 200°C

With V

RRM

= 0

following surge,

initial T

J

= 200°C

10500 A

2

s

16500 A

2

s

15000 A

2

s

165000 A

2

√s

t = 0.1 to 10ms, V

RRM

= 0 following surge

I

FAV

= 100A, T

C

= 130°C

1.5V

THERMAL CHARACTERISTICS

Characteristics

Operating junction and storage temperature range

Maximum thermal resistance

Symbol

T

J

, T

stg

T

J

, T

stg

R

ӨJC

R

ӨCS

Test Conditions

-40° to 200°C

1N3292B = -65° to +200°C

0.4°C/W junction to case

0.1°C/W case to sink

144 Market Street

Kenilworth NJ 07033 USA

phone +1.908.245-7200

fax +1.908.245-0555

sales@digitroncorp.com

www.digitroncorp.com

Rev. 20121217

1N3292B Related Products

	1N3292B	1N3289	1N3291	1N3292	1N3293	1N3294	1N3295	1N3296A
Description	100 A, 500 V, SILICON, RECTIFIER DIODE, DO-8	100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA	100 A, SILICON, RECTIFIER DIODE, DO-8	100 A, SILICON, RECTIFIER DIODE, DO-8	100 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AA	100 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AA	100 A, SILICON, RECTIFIER DIODE, DO-8	DIODE GEN PUR 1.2KV 100A DO205AA
Is it Rohs certified?	-	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible	incompatible
Maker	-	Digitron	Digitron	Digitron	Digitron	Digitron	Digitron	Digitron
Reach Compliance Code	-	unknow	unknow	unknow	unknow	unknow	unknow	unknow

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