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1N3293

Description
100 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AA
CategoryDiscrete semiconductor    diode   
File Size126KB,3 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
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1N3293 Overview

100 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AA

1N3293 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
Reach Compliance Codeunknow
DIGITRON SEMICONDUCTORS
1N3288(A)-1N3297(A)
MAXIMUM RATINGS
Maximum peak
repetitive reverse
voltage
Part number
V
RRM
T
C
= -40° to +200°C
V
1N3288
1N3289
1N3290
1N3291
1N3292
1N3293
1N3294
1N3295
1N3296
1N3288A
1N3289A
1N3290A
1N3291A
1N3292B
1N3293A
1N3294A
1N3295A
1N3296A
100
200
300
400
500
600
800
1000
1200
Maximum non-
repetitive peak
reverse voltage
V
RSM
T
C
= 25° to 200°C
V
200
300
400
525
650
800
1050
1300
1600
Maximum direct
reverse voltage
V
R
T
C
= -40° to +200
V
100
200
300
400
500
600
800
1000
1200
Maximum peak reverse
current
I
RRM
T
C
= 130°C
mA
24
24
24
24
21
17
13
11
9
HIGH POWER RECTIFIER
ELECTRICAL CHARACTERISTICS
Characteristics
Average forward current
Maximum surge current
Symbol
I
F(AV)
1500A
1600A
I
FSM
1800A
1900A
11500 A
2
s
Maximum I
2
t for fusing
It
Maximum I t for individual device fusing
Maximum I
2
√t
for individual device fusing
(4)
Maximum peak forward voltage
I
2
√t
V
FM
2
2
Non-A
suffix
A suffix
100A
2200A
2300A
2600A
2700A
24000 A
2
s
22000 A
2
s
34000 A
2
s
31000 A
2
s
340000 A
2
√s
Test Conditions
180° sinusoidal conduction, T
C
= 130°C
Half cycle, 50Hz
sine wave
Half cycle, 60Hz
sine wave
Half cycle, 50Hz
sine wave
Half cycle, 60Hz
sine wave
t = 10ms
t = 8.3ms
t = 10ms
t = 8.3ms
Following any rated
load condition and
with rated V
RRM
applied
Following any rated
load condition and
with V
RRM
applied
following surge = 0.
With rated V
RRM
applied following
surge, initial
T
J
= 200°C
With V
RRM
= 0
following surge,
initial T
J
= 200°C
10500 A
2
s
16500 A
2
s
15000 A
2
s
165000 A
2
√s
t = 0.1 to 10ms, V
RRM
= 0 following surge
I
FAV
= 100A, T
C
= 130°C
1.5V
THERMAL CHARACTERISTICS
Characteristics
Operating junction and storage temperature range
Operating junction and storage temperature range
Maximum thermal resistance
Maximum thermal resistance
Symbol
T
J
, T
stg
T
J
, T
stg
R
ӨJC
R
ӨCS
Test Conditions
-40° to 200°C
1N3292B = -65° to +200°C
0.4°C/W junction to case
0.1°C/W case to sink
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121217

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Description 100 A, 600 V, SILICON, RECTIFIER DIODE, DO-205AA 100 A, 200 V, SILICON, RECTIFIER DIODE, DO-205AA 100 A, SILICON, RECTIFIER DIODE, DO-8 100 A, SILICON, RECTIFIER DIODE, DO-8 100 A, 500 V, SILICON, RECTIFIER DIODE, DO-8 100 A, 800 V, SILICON, RECTIFIER DIODE, DO-205AA 100 A, SILICON, RECTIFIER DIODE, DO-8 DIODE GEN PUR 1.2KV 100A DO205AA
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Maker Digitron Digitron Digitron Digitron - Digitron Digitron Digitron
Reach Compliance Code unknow unknow unknow unknow - unknow unknow unknow
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