UNISONIC TECHNOLOGIES CO., LTD
2SB936
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
SILICON PNP EPITAXIAL
PLANAR TYPE
DESCRIPTION
The UTC
2SB936
is a silicon PNP epitaxial planar type, it uses
UTC’s advanced technology to provide the customers with high DC
current gain, low collector to emitter saturation voltage and high
switch speed, etc.
The UTC
2SB936
is suitable for small electronic equipment and
printed circuit board, etc.
FEATURES
* High DC current gain
* Low collector to emitter saturation voltage
* High switch speed
ORDERING INFORMATION
Pin Assignment
1
2
3
B
C
E
B
C
E
Packing
Tube
Tape Reel
Ordering Number
Package
Lead Free
Halogen Free
2SB936L-TN3-T
2SB936G-TN3-T
TO-252
2SB936L-TN3-R
2SB936G-TN3-R
TO-252
Note: Pin Assignment: B: Base C: Collector
E: Emitter
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
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2SB936
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Peak Collector Current
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
C
=25°C)
SYMBOL
V
CBO
V
CEO
V
EBO
I
C
I
CP
RATINGS
UNIT
-40
V
-20
V
-5
V
-10
A
-20
A
T
C
=25°C
40
W
P
C
Collector Power Dissipation
T
A
=25°C
1.3
W
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55 ~+150
°C
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS
(T
C
=25°C)
SYMBOL
BV
CBO
BV
CEO
BV
EBO
I
CBO
I
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
t
on
t
s
t
r
TEST CONDITIONS
I
C
=-10mA, I
E
=0
I
C
=-10mA, I
B
=0
I
C
=-10mA, I
C
=0
V
CB
=-40V, I
E
=0
V
EB
=-5V, I
C
=0
V
CE
=-2V, I
C
=-0.1A
V
CE
=-2V, I
C
=-3 A
I
C
=-10A, I
B
=-0.33A
I
C
=-10A, I
B
=-0.33A
V
CE
=-10V, f=10MHz, I
C
=-0.5A
V
CB
=-10V, f=1MHz, I
E
=0
I
C
=-3A, I
B1
=-0.1A, I
B2
=0.1A
MIN
-40
-20
-5
TYP
MAX UNIT
V
V
V
-50
µA
-50
µA
PARAMETER
Collector-Base Breakdown Voltage
Collector-Emitter Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Transition Frequency
Output Capacitance
Turn-On Time
Storage Time
Fall Time
45
90
-0.6
-1.5
100
400
0.1
0.5
0.1
V
V
MHz
pF
μs
μs
μs
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-029.a
2SB936
Preliminary
PNP EPITAXIAL SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R209-029.a
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