UNISONIC TECHNOLOGIES CO., LTD
2SD2686
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
SILICON NPN EPITAXIAL TYPE
(DARLINGTON POWER)
DESCRIPTION
The UTC
2SD2686
is a silicon NPN epitaxial type transistors,
including a zener diode between collector and base. it uses UTC’s
advanced technology to provide customers high DC current gain.
The UTC
2SD2686
is suitable for solenoid drive and motor drive
applications.
FEATURES
* High DC current gain
* Zener diode included between collector and base
EQUIVALENT CIRCUIT
Collector
Base
≈5kΩ
≈300Ω
Emitter
ORDERING INFORMATION
Ordering Number
Lead Free
2SD2686L-AB3-R
2SD2686L-AB3-R
Halogen Free
2SD2686G-AB3-R
Package
SOT-89
Pin Assignment
1
2
3
B
C
E
Packing
Tape Reel
(1)Packing Type
(2)Package Type
(3)Halogen Free
(1) R: Tape Reel
(2) AB3: SOT-89
(3) L: Lead Free, G: Halogen Free
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
1 of 3
QW-R208-050.a
2SD2686
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS
(T
A
=25°C, unless otherwise specified)
SYMBOL
RATINGS
UNIT
V
CBO
50
V
V
CEO
60±10
V
V
EBO
8
V
1
A
DC
I
C
Collector Current
Pulse
I
CP
3
A
Base Current
I
B
0.5
A
Power Dissipation (Note 2)
P
D
500
mW
Junction Temperature
T
J
150
°C
Storage Temperature
T
STG
-55~+150
°C
Note: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Mounted on an FR4 board (glass-epoxy; 1.6mm thick; Cu area, 645mm
2
)
ELECTRICAL CHARACTERISTICS
(T
A
=25°C, unless otherwise specified)
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
DC Current Gain
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Turn-On Time
Storage Time
Fall Time
SYMBOL
BV
CEO
I
CBO
I
CEO
I
EBO
h
FE
V
CE(sat)
V
BE(sat)
t
ON
t
STG
t
F
TEST CONDITIONS
I
C
=10mA, I
B
=0
V
CB
=45V, I
E
=0
V
CE
=45V, I
E
=0
V
EB
=8V, I
C
=0
V
CE
=2V, I
C
=1.0A
I
C
=0.5A, I
B
=1mA
I
C
=1.0A, I
B
=1mA
I
C
=1.0A, I
B
=1mA
See specified test circuit.
MIN
50
TYP MAX UNIT
60
70
V
10
μA
10
μA
4.0
mA
1.2
1.5
2.0
0.4
4.0
0.6
V
V
V
μs
μs
μs
0.8
2000
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 3
QW-R208-050.a
2SD2686
Preliminary
NPN EPITAXIAL SILICON TRANSISTOR
SWITCHING TIME TEST CIRCUIT & TIMING CHART
V
CC
≈30V
20µs
Input
30Ω
Output
Duty cycle<1%
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R208-050.a
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