FDS6570A
March 2000
FDS6570A
Single N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
15 A, 20 V. R
DS(on)
= 0.0075
Ω
@ V
GS
= 4.5 V
R
DS(on)
= 0.010
Ω
@ V
GS
= 2.5 V.
•
•
•
•
Low gate charge (47nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
•
•
•
DC/DC converter
Load switch
Battery protection
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
T
A
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
FDS6570A
20
(Note 1a)
Units
V
V
A
W
±
8
15
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
FDS6570A
Device
FDS6570A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
FDS6570A Rev. C
FDS6570A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250µA, Referenced to 25°C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
Min Typ
20
29
Max
Units
V
mV/°C
Off Characteristics
1
100
-100
µA
nA
nA
Gate-Body Leakage Current, Reverse V
GS
= -8 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250µA, Referenced to 25°C
V
GS
= 4.5 V, I
D
=15 A
V
GS
= 4.5 V, I
D
=15 A,
T
J
=125°C
V
GS
= 2.5 V, I
D
=12 A
V
GS
= 4.5 V, V
DS
= 5.0 V
V
DS
= 5 V, I
D
= 15 A
0.4
0.9
-4
0.006
0.009
0.008
1.5
V
mV/°C
0.0075
0.0130
0.0100
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
25
70
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
4700
850
310
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
20
27
95
35
32
44
133
56
66
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 15 A,
V
GS
= 5 V,
47
7
10.5
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
2.1
0.65
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.
a) 50° C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a 0.003 in
2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDS6570A Rev. C
FDS6570A
Typical Characteristics
50
V
GS
= 4.5V
2.5V
I
D
, DRAIN CURRENT (A)
40
3.0V
30
2.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
2
1.5
V
GS
= 2.0V
2.5V
3.0V
20
1
4.5V
10
1.5V
0
0
0.4
0.8
1.2
1.6
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.5
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.03
R
DS(ON)
, ON RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 15A
V
GS
= 4.5V
I
D
= 7.0A
0.024
1.4
1.2
0.018
1
0.012
T
J
= 125 C
25 C
o
o
0.8
0.006
0.6
-50
-25
0
25
50
75
100
o
125
150
0
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
50
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
40
T
J
= -55 C
125 C
o
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
25 C
o
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0
10
T
J
=125 C
1
o
o
30
25 C
125 C
o
20
0.1
10
0.01
0
0.5
1
1.5
2
2.5
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6570A Rev. C
FDS6570A
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 13A
(continued)
7000
6000
4
CAPACITANCE (pF)
V
DS
= 5V
10V
15V
5000
C
iss
4000
3000
2000
1000
0
C
oss
C
rss
0
4
8
12
16
20
3
2
1
0
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
R
DS(ON)
Limit
I
D
, DRAIN CURRENT (A)
1ms
10
1s
10s
DC
V
GS
= 4.5V
SINGLE
PULSE
R
θ
JA
= 125 C/W
0.01
0.01
0.1
1
10
100
o
50
100
µ
s
SINGLE PULSE
40
POWER (W)
R
θ
JA
=125 C/W
T
A
=25 C
30
o
o
10ms
100ms
1
20
0.1
10
0
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
Single Pulse
r(t), NORMALIZED EFFECTIVE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6570A Rev. C
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration:
Figure 1.0
Packaging Description:
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no flow code)
TNR
2,500
13" Dia
343x64x343
5,000
0.0774
0.6060
L86Z
Rail/Tube
95
-
530x130x83
30,000
0.0774
-
F011
TNR
4,000
13" Dia
343x64x343
8,000
0.0774
0.9696
D84Z
TNR
500
7" Dia
184x187x47
1,000
0.0774
0.1182
F852
NDS
9959
Pin 1
SOIC-8 Unit Orientation
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
LOT: CBVK741B019
FSID: FDS9953A
QTY: 2500
SPEC:
F63TNLabel
F63TN Label
ESD Label
(F63TNR)3
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
SOIC(8lds) Tape Leader and Trailer
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
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