datasheet
EEWORLDEEWORLDEEWORLD
Datasheet
Part Number

Keyword

Search
Keyword

Part Number

Search
Datasheet> All Categories > Discrete semiconductor> The transistor> FDS6570AD84Z
PDF
Preview

FDS6570AD84Z

Description
Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
CategoryDiscrete semiconductor    The transistor   
File Size202KB，8 Pages
ManufacturerFairchild
Websitehttp://www.fairchildsemi.com/
Download Datasheet Parametric Compare View All

FDS6570AD84Z Overview

Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8

FDS6570AD84Z Parametric

Parameter NameAttribute value
MakerFairchild
Parts packaging codeSOT
package instructionSMALL OUTLINE, R-PDSO-G8
Contacts8
Reach Compliance Codeunknown
ECCN codeEAR99
ConfigurationSINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage20 V
Maximum drain current (ID)15 A
Maximum drain-source on-resistance0.0075 Ω
FET technologyMETAL-OXIDE SEMICONDUCTOR
JESD-30 codeR-PDSO-G8
Number of components1
Number of terminals8
Operating modeENHANCEMENT MODE
Maximum operating temperature150 °C
Package body materialPLASTIC/EPOXY
Package shapeRECTANGULAR
Package formSMALL OUTLINE
Polarity/channel typeN-CHANNEL
Certification statusNot Qualified
surface mountYES
Terminal formGULL WING
Terminal locationDUAL
transistor applicationsSWITCHING
Transistor component materialsSILICON

FDS6570AD84Z Preview

FDS6570A
March 2000
FDS6570A
Single N-Channel 2.5V Specified PowerTrench
MOSFET
General Description
This N-Channel 2.5V specified MOSFET is produced
using Fairchild Semiconductor's advanced
PowerTrench process that has been especially tailored
to minimize on-state resistance and yet maintain superior
switching performance.
These devices are well suited for low voltage and battery
powered applications where low in-line power loss and
fast switching are required.
Features
•
15 A, 20 V. R
DS(on)
= 0.0075
Ω
@ V
GS
= 4.5 V
R
DS(on)
= 0.010
Ω
@ V
GS
= 2.5 V.
•
•
•
•
Low gate charge (47nC typical).
Fast switching speed.
High performance trench technology for extremely
low R
DS(ON)
.
High power and current handling capability.
Applications
•
•
•
DC/DC converter
Load switch
Battery protection
D
D
D
D
5
6
4
3
2
1
SO-8
S
S
S
G
7
8
T
A
= 25°C unless otherwise noted
Absolute Maximum Ratings
Symbol
V
DSS
V
GSS
I
D
P
D
Drain-Source Voltage
Gate-Source Voltage
Drain Current
- Continuous
- Pulsed
Parameter
FDS6570A
20
(Note 1a)
Units
V
V
A
W
±
8
15
50
2.5
1.2
1
-55 to +150
Power Dissipation for Single Operation
(Note 1a)
(Note 1b)
(Note 1c)
T
J
, T
stg
Operating and Storage Junction Temperature Range
°
C
Thermal Characteristics
R
θ
JA
R
θ
JC
Thermal Resistance, Junction-to-Ambient
Thermal Resistance, Junction-to-Case
(Note 1a)
(Note 1)
50
25
°
C/W
°
C/W
Package Outlines and Ordering Information
Device Marking
FDS6570A
Device
FDS6570A
Reel Size
13’’
Tape Width
12mm
Quantity
2500 units
2000
Fairchild Semiconductor Corporation
FDS6570A Rev. C
FDS6570A
Electrical Characteristics
Symbol
BV
DSS
∆BV
DSS
∆T
J
I
DSS
I
GSSF
I
GSSR
T
A
= 25°C unless otherwise noted
Parameter
Drain-Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate-Body Leakage Current, Forward
Test Conditions
V
GS
= 0 V, I
D
= 250
µA
I
D
= 250µA, Referenced to 25°C
V
DS
= 16 V, V
GS
= 0 V
V
GS
= 8 V, V
DS
= 0 V
Min Typ
20
29
Max
Units
V
mV/°C
Off Characteristics
1
100
-100
µA
nA
nA
Gate-Body Leakage Current, Reverse V
GS
= -8 V, V
DS
= 0 V
(Note 2)
On Characteristics
V
GS(th)
∆V
GS(th)
∆T
J
R
DS(on)
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain-Source
On-Resistance
V
DS
= V
GS
, I
D
= 250
µA
I
D
= 250µA, Referenced to 25°C
V
GS
= 4.5 V, I
D
=15 A
V
GS
= 4.5 V, I
D
=15 A,
T
J
=125°C
V
GS
= 2.5 V, I
D
=12 A
V
GS
= 4.5 V, V
DS
= 5.0 V
V
DS
= 5 V, I
D
= 15 A
0.4
0.9
-4
0.006
0.009
0.008
1.5
V
mV/°C
0.0075
0.0130
0.0100
Ω
I
D(on)
g
FS
On-State Drain Current
Forward Transconductance
25
70
A
S
Dynamic Characteristics
C
iss
C
oss
C
rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(Note 2)
V
DS
= 10 V, V
GS
= 0 V,
f = 1.0 MHz
4700
850
310
pF
pF
pF
Switching Characteristics
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
Turn-On Delay Time
Turn-On Rise Time
Turn-Off Delay Time
Turn-Off Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 10 V, I
D
= 1 A,
V
GS
= 4.5 V, R
GEN
= 6
Ω
20
27
95
35
32
44
133
56
66
ns
ns
ns
ns
nC
nC
nC
V
DS
= 10 V, I
D
= 15 A,
V
GS
= 5 V,
47
7
10.5
Drain-Source Diode Characteristics and Maximum Ratings
I
S
V
SD
Maximum Continuous Drain-Source Diode Forward Current
Drain-Source Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.1 A
(Note 2)
2.1
0.65
1.2
A
V
Notes:
1.
R
θJA
is the sum of the junction-to-case and case-to-ambient resistance where the case thermal reference is defined as the solder mounting surface of the
drain pins. R
θJC
is guaranteed by design while R
θJA
is determined by the user's board design.
a) 50° C/W when
mounted on a 0.5 in
2
pad of 2 oz. copper.
b) 105° C/W when
mounted on a 0.02 in
2
pad of 2 oz. copper.
c) 125° C/W when
mounted on a 0.003 in
2
pad of 2 oz. copper.
Scale 1 : 1 on letter size paper
2.
Pulse Test: Pulse Width
≤
300
µs,
Duty Cycle
≤
2.0%
FDS6570A Rev. C
FDS6570A
Typical Characteristics
50
V
GS
= 4.5V
2.5V
I
D
, DRAIN CURRENT (A)
40
3.0V
30
2.0V
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
2.5
2
1.5
V
GS
= 2.0V
2.5V
3.0V
20
1
4.5V
10
1.5V
0
0
0.4
0.8
1.2
1.6
2
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
0.5
0
10
20
30
40
50
I
D
, DRAIN CURRENT (A)
Figure 1. On-Region Characteristics.
Figure 2. On-Resistance Variation
with Drain Current and Gate Voltage.
0.03
R
DS(ON)
, ON RESISTANCE (OHM)
1.6
R
DS(ON)
, NORMALIZED
DRAIN-SOURCE ON-RESISTANCE
I
D
= 15A
V
GS
= 4.5V
I
D
= 7.0A
0.024
1.4
1.2
0.018
1
0.012
T
J
= 125 C
25 C
o
o
0.8
0.006
0.6
-50
-25
0
25
50
75
100
o
125
150
0
1
1.5
2
2.5
3
3.5
4
4.5
5
V
GS
, GATE TO SOURCE VOLTAGE (V)
T
J
, JUNCTION TEMPERATURE ( C)
Figure 3. On-Resistance Variation
with Temperature.
50
V
DS
= 5V
I
D
, DRAIN CURRENT (A)
40
T
J
= -55 C
125 C
o
o
Figure 4. On-Resistance Variation
with Gate-to-Source Voltage.
100
25 C
o
I
S
, REVERSE DRAIN CURRENT (A)
V
GS
= 0
10
T
J
=125 C
1
o
o
30
25 C
125 C
o
20
0.1
10
0.01
0
0.5
1
1.5
2
2.5
0.001
0
0.2
0.4
0.6
0.8
1
1.2
V
GS
, GATE TO SOURCE VOLTAGE (V)
V
SD
, BODY DIODE VOLTAGE (V)
Figure 5. Transfer Characteristics.
Figure 6. Body Diode Forward Voltage
Variation with Source Current
and Temperature.
FDS6570A Rev. C
FDS6570A
Typical Characteristics
5
V
GS
, GATE-SOURCE VOLTAGE (V)
I
D
= 13A
(continued)
7000
6000
4
CAPACITANCE (pF)
V
DS
= 5V
10V
15V
5000
C
iss
4000
3000
2000
1000
0
C
oss
C
rss
0
4
8
12
16
20
3
2
1
0
0
10
20
30
40
50
Q
g
, GATE CHARGE (nC)
V
DS
, DRAIN TO SOURCE VOLTAGE (V)
Figure 7. Gate Charge Characteristics.
Figure 8. Capacitance Characteristics.
100
R
DS(ON)
Limit
I
D
, DRAIN CURRENT (A)
1ms
10
1s
10s
DC
V
GS
= 4.5V
SINGLE
PULSE
R
θ
JA
= 125 C/W
0.01
0.01
0.1
1
10
100
o
50
100
µ
s
SINGLE PULSE
40
POWER (W)
R
θ
JA
=125 C/W
T
A
=25 C
30
o
o
10ms
100ms
1
20
0.1
10
0
0.001
0.01
0.1
1
10
100
1000
V
DS
, DRAIN-SOURCE VOLTAGE (V)
SINGLE PULSE TIME (SEC)
Figure 9. Maximum Safe Operating Area.
Figure 10. Single Pulse Maximum
Power Dissipation.
1
TRANSIENT THERMAL RESISTANCE
0.5
0.2
0.1
0.05
0.02
0.01
0.005
0.002
0.001
0.0001
0.001
0.01
0.1
t
1
, TIME (sec)
1
10
D = 0.5
0.2
0.1
0.05
P(pk)
0.02
0.01
Single Pulse
r(t), NORMALIZED EFFECTIVE
R
θ
JA
(t) = r(t) * R
θ
JA
R
θ
JA
= 125°C/W
t
1
t
2
T
J
- T
A
= P * R
θ
JA (t)
Duty Cycle, D = t
1
/t
2
100
300
Figure 11. Transient Thermal Response Curve.
Thermal characterization performed using the conditions described in Note 1c.
Transient themal response will change depending on the circuit board design.
FDS6570A Rev. C
SO-8 Tape and Reel Data and Package Dimensions
SOIC(8lds) Packaging
Configuration:
Figure 1.0
Packaging Description:
EL ECT ROST AT IC
SEN SIT IVE DEVICES
DO NO T SHI P OR STO RE N EAR ST RO NG EL ECT ROST AT IC
EL ECT RO M AGN ETI C, M AG NET IC O R R ADIO ACT IVE FI ELD S
TNR D ATE
PT NUMB ER
PEEL STREN GTH MIN ___ __ ____ __ ___gms
MAX ___ ___ ___ ___ _ gms
Antistatic Cover Tape
ESD Label
SOIC-8 parts are shipped in tape. The carrier tape is
made from a dissipative (carbon filled) polycarbonate
resin. The cover tape is a multilayer film (Heat Activated
Adhesive in nature) primarily composed of polyester film,
adhesive layer, sealant, and anti-static sprayed agent.
These reeled parts in standard option are shipped with
2,500 units per 13" or 330cm diameter reel. The reels are
dark blue in color and is made of polystyrene plastic (anti-
static coated). Other option comes in 500 units per 7" or
177cm diameter reel. This and some other options are
further described in the Packaging Information table.
These full reels are individually barcode labeled and
placed inside a standard intermediate box (illustrated in
figure 1.0) made of recyclable corrugated brown paper.
One box contains two reels maximum. And these boxes
are placed inside a barcode labeled shipping box which
comes in different sizes depending on the number of parts
shipped.
Static Dissipative
Embossed Carrier Tape
F63TNR
Label
Customized
Label
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
F852
NDS
9959
SOIC (8lds) Packaging Information
Packaging Option
Packaging type
Qty per Reel/Tube/Bag
Reel Size
Box Dimension (mm)
Max qty per Box
Weight per unit (gm)
Weight per Reel (kg)
Note/Comments
Standard
(no flow code)
TNR
2,500
13" Dia
343x64x343
5,000
0.0774
0.6060
L86Z
Rail/Tube
95
-
530x130x83
30,000
0.0774
-
F011
TNR
4,000
13" Dia
343x64x343
8,000
0.0774
0.9696
D84Z
TNR
500
7" Dia
184x187x47
1,000
0.0774
0.1182
F852
NDS
9959
Pin 1
SOIC-8 Unit Orientation
343mm x 342mm x 64mm
Standard Intermediate box
ESD Label
F63TNR Label sample
LOT: CBVK741B019
FSID: FDS9953A
QTY: 2500
SPEC:
F63TNLabel
F63TN Label
ESD Label
(F63TNR)3
D/C1: D9842
D/C2:
QTY1:
QTY2:
SPEC REV:
CPN:
N/F: F
SOIC(8lds) Tape Leader and Trailer
Configuration:
Figure 2.0
Carrier Tape
Cover Tape
Components
Trailer Tape
640mm minimum or
80 empty pockets
Leader Tape
1680mm minimum or
210 empty pockets
July 1999, Rev. B
More (Only the first 5 pages are displayed. Please Download Datasheet to view the full content.) >

FDS6570AD84Z Related Products

FDS6570AD84Z FDS6570AF011 FDS6570AL86Z
Description Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Small Signal Field-Effect Transistor, 15A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
Maker Fairchild Fairchild Fairchild
Parts packaging code SOT SOT SOT
package instruction SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8 SMALL OUTLINE, R-PDSO-G8
Contacts 8 8 8
Reach Compliance Code unknown unknown unknown
ECCN code EAR99 EAR99 EAR99
Configuration SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE SINGLE WITH BUILT-IN DIODE
Minimum drain-source breakdown voltage 20 V 20 V 20 V
Maximum drain current (ID) 15 A 15 A 15 A
Maximum drain-source on-resistance 0.0075 Ω 0.0075 Ω 0.0075 Ω
FET technology METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR METAL-OXIDE SEMICONDUCTOR
JESD-30 code R-PDSO-G8 R-PDSO-G8 R-PDSO-G8
Number of components 1 1 1
Number of terminals 8 8 8
Operating mode ENHANCEMENT MODE ENHANCEMENT MODE ENHANCEMENT MODE
Maximum operating temperature 150 °C 150 °C 150 °C
Package body material PLASTIC/EPOXY PLASTIC/EPOXY PLASTIC/EPOXY
Package shape RECTANGULAR RECTANGULAR RECTANGULAR
Package form SMALL OUTLINE SMALL OUTLINE SMALL OUTLINE
Polarity/channel type N-CHANNEL N-CHANNEL N-CHANNEL
Certification status Not Qualified Not Qualified Not Qualified
surface mount YES YES YES
Terminal form GULL WING GULL WING GULL WING
Terminal location DUAL DUAL DUAL
transistor applications SWITCHING SWITCHING SWITCHING
Transistor component materials SILICON SILICON SILICON

Recommended Resources

Circuit diagram of a regulated power supply that outputs -5V DC voltage

Electrical schematic diagram of B2012A gantry planer (4)

Output positive and negative polarity conversion circuit diagram

Visual doorbell for the deaf

High Frequency Sine Wave Generator

Color TV remote control 38

Wince Bluetooth adapter problem
I plugged a Bluetooth adapter into a single-board computer with a wince operating system. My phone can find the Bluetooth adapter, but the Bluetooth program that comes with wince can never find the Bl...
kkhtkkht Embedded System
Use Tantalum Capacitors with Caution
Someone's capacitor exploded. Here is a picture. This is a terrifying scene collected on the Internet. Tantalum capacitors exploded and they would catch fire, so many manufacturers dare not use them.C...
qwqwqw2088 Analogue and Mixed Signal
[SC8905 EVM Evaluation] + MCU I2C Communication Experiment
I have been preparing to use the Qinheng CH579 development board to do the I2C communication experiment of SC8905EVM, so that one experiment can complete two evaluations. But it took a lot of time to ...
hujj Power technology
Hikvision responds to US ban: All components used have alternatives
According to domestic media reports, in response to investors' questions about the "US procurement ban", Hikvision stated on the interactive platform that there was a relatively long preparation perio...
eric_wang Domestic Chip Exchange
Does anyone have the PCB data for the button battery base package (22mm diameter)? Can you send me one?
Does anyone have the PCB data for the button battery base package (22mm diameter)? Can you send me one?...
yukaixuan PCB Design
How to implement BLUENRG1/2 Bluetooth MESH and BLE REMOTE at the same time?
[i=s]This post was last edited by skys2000 on 2021-3-4 11:55[/i]There is a Bluetooth MESH lamp on Taobao that can be paired with the remote control within 5 seconds of turning on the lamp, so that MES...
skys2000 ST - Low Power RF
Shortcut:   00 01 02 03 04 05 06 07 08 09 0A 0C 0F 0J 0L 0M 0R 0S 0T 0Z 10 11 12 13 14 15 16 17 18 19 1A 1B 1C 1D 1E 1F 1H 1K 1M 1N 1P 1S 1T 1V 1X 1Z 20 21 22 23 24 25 26 27 28 29 2A 2B 2C 2D 2E 2F 2G 2K 2M 2N 2P 2Q 2R 2S 2T 2W 2Z 30 31 32 33 34 35 36 37 38 39 3A 3B 3C 3D 3E 3F 3G 3H 3J 3K 3L 3M 3N 3P 3R 3S 3T 3V 40 41 42 43 44 45 46 47 48 49 4A 4B 4C 4D 4M 4N 4P 4S 4T 50 51 52 53 54 55 56 57 58 59 5A 5B 5C 5E 5G 5H 5K 5M 5N 5P 5S 5T 5V 60 61 62 63 64 65 66 67 68 69 6A 6C 6E 6F 6M 6N 6P 6R 6S 6T 70 71 72 73 74 75 76 77 78 79 7A 7B 7C 7M 7N 7P 7Q 7V 7W 7X 80 81 82 83 84 85 86 87 88 89 8A 8D 8E 8L 8N 8P 8S 8T 8W 8Y 8Z 90 91 92 93 94 95 96 97 98 99 9A 9B 9C 9D 9F 9G 9H 9L 9S 9T 9W

Popular Components

  1. 240-031-3-9SCA2R5U
  2. FW-22-02-L-D-250-100
  3. 717DFCG37PAVFM
  4. LCS011S26WC26CW
  5. SH010M15K0A2S51836
  6. RWR89S2000DMS73
  7. SR71S0-26E5-180
  8. GUB-GM7BLF-01-5901-D-B
  9. MMSZ5266BS
  10. BZM5227DT/R7
  11. 1.5SMC16-AU_R2_100A1
  12. A2543WRD-24P-BK-G15

Popular Articles

  1. Configuration and use of GPIO (MC9S08AW60)
  2. [Technical Expert Test Notes Series] Part 4: Multimeter to measure power supply transient recovery
  3. Element14 Releases: Growing Demand for Low-Cost Single Board Computers for Industrial and IoT Applications
  4. A brief discussion on the classification and principle of motor working modes
  5. Overview of automobile industry-related policy information (2021.09.06—09.12)
  6. SAIC-GM-Wuling to launch "Wuling chip"
  7. OPPO's mysterious new phone gets approval from the Ministry of Industry and Information Technology to come with a 6.5-inch screen
  8. EMCORE launches new MEMS inertial measurement unit for autonomous driving and other fields
  9. Is the effect comparable to that of iPad? Check out the models equipped with OLED screens
  10. How to use electronic insulation megohmmeter

Technical ResourceMore

  1. Principles and Development and Application of DSP Chips (3rd Edition)
  2. Konka P29MV103 EPROM data
  3. Strategies and techniques for preventing ARP attacks
  4. LM324 Introduction and Application
  5. Design of BIT software under partition operating system
  6. Lenovo LXB-L15C LCD Color Display (PWPC Board Repair) Repair Manual
  7. Stepper Motor Handouts
  8. Steps to train embedded software engineers
  9. Use of MCU I/O Ports
  10. LED display production method tutorial

EEWorld
subscription
account

EEWorld
service
account

Automotive
development
circle

Robot
development
community

About Us Customer Service Contact Information Datasheet Sitemap LatestNews
Index Files: 1111  440  741  1995  1906  23  9  15  41  39 
Datasheet   0 1 2 3 4 5 6 7 8 9 A B C D E F G H I J K L M N O P Q R S T U V W X Y Z
Room 1530, 15th Floor, Building B, No. 18 Zhongguancun Street, Haidian District, Beijing Telephone: (010) 82350740 Postal Code: 100190
Copyright © 2005-2026 EEWORLD.com.cn, Inc. All rights reserved 京ICP证060456号 京ICP备10001474号-1 电信业务审批[2006]字第258号函 京公网安备 11010802033920号