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4PTxxA08

Description
Sensitive gate SCRs, 4A
File Size464KB,7 Pages
ManufacturerNell
Websitehttps://www.nellsemi.com
Download Datasheet View All

4PTxxA08 Overview

Sensitive gate SCRs, 4A

SEMICONDUCTOR
4PT Series
Sensitive gate SCRs, 4A
RoHS
RoHS
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
4
600 to 800
10
to
200
Unit
A
2
2
1
2
3
V
µA
1
2
3
TO-251
(I-PAK)
(4PTxxF)
2
TO-252
(D-PAK)
(4PTxxG)
DESCRIPTION
Thanks to highly sensitive triggering levels, the 4PT
series is suitable for all applications where the
available gate current is limited, such as motor
control for hand tools, kitchen aids, capacitive
discharge ignitions, overvoltage crowbar protection
for low power supplies among others.
Available in through-hole or surface-mount packages,
they provide an optimized performance in a limited
space area.
1
2
3
1
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(4PTxxA)
TO-220AB
(lnsulated)
(4PTxxAI)
1
2
3
TO-126
(Non-lnsulated)
(4PTxxAM)
TO-202-3
(4PTxxAT)
3(G)
2(A)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
SYMBOL
TEST CONDITIONS
TO-251/TO-252/TO-220AB
RMS on-state current full sine wave
(180° conduction angle )
I
T(RMS)
TO-220AB insulated
TO-126
TO-202-3
TO-251/TO-252/TO-220AB
Average on-state current
(180° conduction angle)
I
T(AV)
TO-220AB insulated
TO-126
TO-202-3
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Repetitive peak off-state voltage
Repetitive peak reverse voltage
Storage temperature range
Operating junction temperature range
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
V
DRM
V
RRM
T
stg
T
j
T
j
=125ºC
F = 60 Hz
T
p
= 20 µs
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
T
c
=115°C
T
c
=110°C
T
c
=95°C
T
c
=60°C
T
c
=115°C
T
c
=110°C
T
c
=95°C
T
c
=60°C
t = 20 ms
t = 16.7 ms
30
33
4.5
50
1.2
0.2
600
and 800
- 40
to
+ 150
ºC
- 40
to
+ 125
A
A
2
s
A/µs
A
W
V
2.5
A
4
A
VALUE
UNIT
www.nellsemi.com
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