SEMICONDUCTOR
8PT Series
Sensitive and Standard SCRs, 8A
RoHS
RoHS
Main Features
Symbol
I
T(RMS)
V
DRM
/V
RRM
I
GT
Value
8
600 to 1000
0.2
to
15
Unit
A
2
2
1
2
3
V
mA
1
2
3
TO-251
(I-PAK)
(8PTxxF)
TO-252
(D-PAK)
(8PTxxG)
2
DESCRIPTION
Available either in sensitive or standard gate
triggering levels, the 8A SCR series is suitable
to fit all modes of control found in applications
such as overvoltage crowbar protection, motor
control circuits in power tools and kitchen aids,
inrush current limiting circuits, capacitive
discharge ignition and voltage regulation circuits.
Available in through-hole or surface-mount
packages, they provide an optimized performance
in a limited space.
1
2
1
3
2
3
TO-220AB
(Non-lnsulated)
(8PTxxA)
2(A)
TO-220AB
(lnsulated)
(8PTxxAI)
3(G)
1(K)
ABSOLUTE MAXIMUM RATINGS
PARAMETER
RMS on-state current full sine wave
(180° conduction angle )
Average on-state current
(180° conduction angle)
Non repetitive surge peak on-state
current
(full
cycle, T
j
initial = 25°C)
I
2
t Value for fusing
Critical rate of rise of on-state current
I
G
= 2xl
GT
, t
r
≤100ns
Peak gate current
Average gate power dissipation
Storage temperature range
Operating junction temperature range
SYMBOL
I
T(RMS)
TEST CONDITIONS
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
T(AV)
TO-251/TO-252/TO-220AB
TO-220AB insulated
I
TSM
I
2
t
dI/dt
I
GM
P
G(AV)
T
stg
T
j
F = 60 Hz
T
p
= 20 µs
T
j
=125ºC
F =50 Hz
F =60 Hz
t
p
= 10 ms
T
j
= 125ºC
T
j
= 125ºC
Tc=110°C
Tc=100°C
Tc=110°C
Tc=100°C
t = 20 ms
t = 16.7 ms
5.1
95
100
45
50
4
1
- 40
to
+ 150
ºC
- 40
to
+ 125
A
A
2
s
A/µs
A
W
A
VALUE
8
UNIT
A
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Page 1 of 7
SEMICONDUCTOR
8PT Series
(T
J
= 25
ºC, unless otherwise specified)
8PTxxxx
TEST CONDITIONS
T
-
2
15
1.3
0.2
25
30
50
1.6
0.85
46
5
1
30
70
150
Min.
Max.
Max.
T
j
= 125°C
Min.
Max.
Max.
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min.
Max.
Max.
Max.
Max.
0.5
5
RoHS
RoHS
STANDARD ELECTRICAL SPECIFICATIONS
SYMBOL
I
GT
V
GT
V
GD
I
H
I
L
dV/dt
V
TM
V
to
R
d
I
DRM
I
RRM
V
D
= V
DRM
, R
L
= 3.3K
Ω
I
T
= 100 mA, gate open
I
G
= 1.2 I
GT
V
D
= 67% V
DRM
, gate open
I
TM
= 16A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM
Unit
V
D
= 12 V, R
L
= 30Ω
mA
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
SENSITIVE ELECTRICAL CHARACTERISTICS
SYMBOL
I
GT
V
GT
V
GD
V
RG
I
H
I
L
dV/dt
V
TM
V
to
R
d
I
DRM
I
RRM
V
D
= 12 V, R
L
= 140Ω
TEST CONDITIONS
(T
j
= 25
ºC, unless otherwise specified)
8PTxxxx-S
Max.
Max.
200
0.8
0.1
8
5
6
5
1.6
0.85
46
5
1
Unit
µA
V
V
V
mA
mA
V/µs
V
V
mΩ
µA
mA
V
D
= V
DRM
, R
L
= 3.3K
Ω,
R
GK
=220Ω
I
RG
= 10
µA
I
T
= 50 mA
,
R
GK
= 1 KΩ
I
G
= 1 mA
,
R
GK
= 1 KΩ
V
D
= 67% V
DRM
, R
GK
= 220Ω
I
TM
= 16A, t
P
= 380 µs
Threshold voltage
Dynamic resistance
V
DRM
= V
RRM,
R
GK
= 220Ω
T
j
= 125°C
Min.
Min.
Max.
Max.
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
T
j
= 125°C
T
j
= 25°C
T
j
= 125°C
Min.
Max.
Max.
Max.
Max.
THERMAL RESISTANCE
SYMBOL
Parameter
IPAK/DPAK/TO-220AB
Junction to case
(DC)
TO-220AB insulated
S = 0.5 cm
2
R
th(j-a)
Junction to ambient (DC)
D-PAK
I-PAK
TO-220AB, TO-220AB insulated
4.6
70
100
60
°C/W
VALUE
1.3
°C/W
UNIT
R
th(j-c)
S=Copper surface under tab
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Page 2 of 7
SEMICONDUCTOR
8PT Series
RoHS
RoHS
PRODUCT SELECTOR
VOLTAGE
(x
x)
PART NUMBER
600
V
8PTxxA-S/8PTxxAl-S
8PTxxA-T/8PTxxAl-T
8PTxxA/8PTxxAl
8PTxxF-S
8PTxxF-T
8PTxxF
8PTxxG-S
8PTxxG-T
8PTxxG
V
V
V
V
V
V
V
V
V
800
V
V
V
V
V
V
V
V
V
V
1000
V
V
V
V
V
V
V
V
V
V
200
µA
0.5~5
mA
2~15
mA
200
µA
0.5~5
mA
2~15
mA
200
µA
0.5~5
mA
2~15
mA
TO-220AB
TO-220AB
TO-220AB
I-PAK
I-PAK
I-PAK
D-PAK
D-PAK
D-PAK
SENSITIVITY
PACKAGE
ORDERING INFORMATION
ORDERING TYPE
8PTxxA-y
8PTxxAI-y
8PTxxF-y
8PTxxG-y
Note:
xx
=
voltage, y
=
sensitivity
MARKING
8PTxxA-y
8PTxxAI-y
8PTxxF-y
8PTxxG-y
PACKAGE
TO-220AB
TO-220AB (insulated)
TO-251(I-PAK)
TO-252(D-PAK)
WEIGHT
2.0g
2.3g
0.40g
0.38g
BASE Q,TY
50
50
80
80
DELIVERY MODE
Tube
Tube
Tube
Tube
ORDERING INFORMATION SCHEME
8 PT 06
Current
8 = 8A,
I
T(RMS)
- S
SCR series
Voltage Code
06 = 600V
08 = 800V
10 = 1000V
Package type
A
=
TO-220AB (non-insulated)
AI
=
TO-220AB ( insulated)
F = TO-251 (IPAK)
G = TO-252 (DPAK)
I
GT
Sensitivity
S = 70~200 µA
T = 0.5~5 mA
Blank = 2~15 mA
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Page 3 of 7
SEMICONDUCTOR
8PT Series
RoHS
RoHS
Fig.1 Maximum average power dissipation versus
average on-state current
P(W)
8
7
6
5
4
3
360°
α=180°
10
9
8
7
6
5
4
3
2
1
0
6
Fig.2 Average and DC on-state current versus
case temperature
I
T(AV)
(A)
DPAK IPAK
DC
TO-220AB
α=180°
TO-220AB
Insulated
2
1
0
0
1
2
α
I
T(AV)
(A)
3
4
5
T case (°C)
0
25
50
75
100
125
Fig.3 Average and DC on-state current versus
ambient temperature
2.5
2.0
1.5
1.0
0.5
0.0
0
25
50
DPAK
IPAK
Fig.4 Relative variation of thermal impedance
junction to case versus pulse duration
K=[Zth(j-c)/Rth(j-c)]
I
T
(AV)(A)
DC
α=180°
Recommended pad layout
Fr4 printed circuit board
1.0
TO-220AB
TO-220AB Insulated
0.5
0.2
T amb (°C)
75
100
125
0.1
1E+3
t p (s)
1E+2
1E+1
1E+0
Fig.5 Relative variation of thermal impedance
junction to ambient versus pulse duration
K=[Zth(j-a)/Rth(j-a)]
1.00
Recommended pad layout,
FR4 printed circuit board
Fig.6 Relative variation of gate trigger current
and holding current versus junction
temperature for I
GT
=200µA
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-40
l
H
& I
L
R
GK
=1KΩ
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj=25°C]
I
GT
DPAK
0.10
TO-220AB
TO-220AB Insulated
0.01
1E-2
t p (s)
1E-1
1E+0
1E+1
1E+2
5E+2
T j (°C)
-20
0
20
40
60
80
100
120
140
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Page 4 of 7
SEMICONDUCTOR
8PT Series
RoHS
RoHS
Fig.7 Relative variation of gate trigger and
holding current versus junction
temperature
Fig.8 Relative variation of holding current
versus gate-cathode resistance
(typical values)
I
H
[R
GK
] / I
H
[R
GK
=1KΩ]
T j =25°C
2.4
2.2
I
GT
2.0
1.8
1.6
1.4
l
H
& I
L
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
-40 -20
I
GT
,I
H
,I
L
[Tj] / I
GT
,I
H
,I
L
[Tj=25°C]
5mA & 15mA
T j (°C)
20
40
60
80
100
120 140
6.0
5.5
I
GT =200µA
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
1E-2
R
GK
(KΩ)
1E-1
1E+0
1E+1
Fig.9 Relative variation of dV/dt immunity
versus gate-cathode resistance
(typical values) for I
G
=200µA
10.00
Fig.10 Relative variation of dV/dt immunity
versus gate-cathode capacitance
(typical values) for I
GT
=200µA
15.0
12.5
10.0
7.5
5.0
2.5
dV/dt[R
GK
] / dV/dt[R
GK
=220Ω]
T
j
=125°C
V
D
=0.67 X V
DRM
dV/dt[C
GK
] / dV/dt[R
GK
=220Ω]
V
D
=0.67 X V
DRM
T
j
=125°C
R
GK
=220Ω
1.00
0.10
0.01
0
200
R
GK
(KΩ)
0.0
0
20
40
60
80
C
GK
(nF)
100 120 140 160 180 200 220
400 600 800 1000 1200 1400 1600 1800 2000
Fig.11 Surge peak on-state current versus
number of cycles
I
STM
(A)
100
90
80
70
60
50
40
30
20
10
0
1
Repetitive
Tc=110°C
Non repetitive
T
j
initial=25°C
Fig.12 Non-repetitive surge peak on-state current
and corresponding values of l²t
I
TSM
(A),I²t(A²s)
Tj inital=25°C
1000
t
p
=10ms
One cycle
I
TSM
dI/dt Iimitation
100
Sinusoidal pulse with width tp< 10ms
I²t
Number of cycles
10
100
1000
10
0.01
0.10
t p (ms)
1.00
10.00
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Page 5 of 7
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