ESH3B, ESH3C & ESH3D
New Product
Vishay General Semiconductor
Surface Mount Ultrafast Plastic Rectifiers
Major Ratings and Characteristics
I
F(AV)
V
RRM
t
rr
V
F
T
J
max.
3A
100 V, 150 V, 200 V
25 ns
0.90 V
175 °C
DO-214AB (SMC)
Features
•
•
•
•
•
•
•
Glass passivated chip junction
Ideal for automated placement
Ultrafast recovery times for high efficiency
Low forward voltage, low power loss
High forward surge capability
Meets MSL level 1 per J-STS-020C
Solder Dip 260 °C, 40 seconds
Mechanical Data
Case:
DO-214AB (SMC)
Epoxy meets UL 94V-0 Flammability rating
Terminals:
Matte tin plated leads, solderable per
J-STD-002B and JESD22-B102D
E3 suffix for commercial grade, HE3 suffix for high
reliability grade (AEC Q101 qualified)
Polarity:
Color band denotes cathode end
Typical Applications
For use in high frequency rectification and freewheel-
ing application in switching mode converter and
inverter for both cosnumer and automotive.
Maximum Ratings
T
A
= 25 °C, unless otherwise specified
Parameter
Device marking code
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current (Fig. 1)
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
Operating junction and storage temperature range
V
RMM
V
RMS
V
DC
I
F(AV)
I
FSM
T
J
, T
STG
Symbol
ESH3B
EHB
100
70
100
ESH3C
EHC
150
105
150
3.0
125
- 55 to + 175
ESH3D
EHD
200
140
200
V
V
V
A
A
°C
Unit
Document Number 84648
17-Oct-05
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ESH3B, ESH3C & ESH3D
Vishay General Semiconductor
Electrical Characteristics
T
A
= 25 °C, unless otherwise specified
Parameter
Maximum instantaneous forward voltage at I = 3 A
(1)
F
Maximum DC reverse current at rated
DC blocking voltage
Maximum reverse recovery time
Typical reverse recovery time
Typical stored charge
Typical junction capacitance
Note:
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
T
A
= 25 °C
T
A
= 125 °C
at I
F
= 0.5 A, I
R
= 1 A, I
rr
= 0.25 A
at I
F
= 3 A, V
R
= 30 V di/dt = 50 A/µs, I
rr
= 10 % IRM T
J
= 25 °C
T
J
= 100 °C
at I
F
= 3 A, V
R
= 30 V di/dt = 50 A/µs, I
rr
= 10 % IRM T
J
= 25 °C
T
J
= 100 °C
at 4.0 V, 1 MHz
Test condition
Symbo
l
V
F
I
R
t
rr
t
rr
Q
rr
C
J
Value
0.90
5.0
150
25
40
55
25
60
70
Unit
V
µA
ns
ns
nC
pF
Thermal Characteristics
T
A
= 25 °C, unless otherwise specified
Parameter
Typical thermal resistance
(1)
Note:
(1) Units mounted on P.C.B. with 12.0 x 12.0 mm land areas.
Symbol
R
θJA
R
θJL
ESH3B
ESH3C
50
15
ESH3D
Unit
°C/W
Ratings and Characteristics Curves
(T
A
= 25
°C
unless otherwise specified)
3.5
125
Average Forward Rectified Current (A)
3
2.5
2
1.5
Peak Forward Surge Current (A)
0
25
50
75
100
125
150
175
100
75
50
1
0.5
0
25
0
1
10
100
Lead Temperature (°C)
Number
of Cycles at 60 Hz
Figure 1. Maximum Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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Document Number 84648
17-Oct-05
ESH3B, ESH3C & ESH3D
Vishay General Semiconductor
100
1000
T
J
= 175 °C
10
T
J
= 150 °C
T
J
= 125 °C
1
Instantaneous Forward Current (A)
Junction Capacitance (pF)
1
1.2
100
T
J
= 25 °C
0.10
10
0.01
0.2
1
0.4
0.6
0.8
0.1
1
10
100
Instantaneous Forward
Voltage
(V)
Reverse
Voltage
(V)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 5. Typical Junction Capacitance
1000
T
J
= 150 °C
100
T
J
= 125 °C
10
100
Transient Thermal Impedance (°C/W)
80
100
T
J
= 175 °C
Instantaneous Reverse Leakage
Current (µA)
10
1
T
J
= 25 °C
0.1
0.01
0
20
40
60
1
0.01
0.1
1
10
100
Percent of Rated Peak Reverse
Voltage
(%)
t - Pulse Duration (sec.)
Figure 4. Typical Reverse Leakage Characteristics
Figure 6. Typical Transient Thermal Impedance
Package dimensions in inches (millimeters)
DO-214AB (SMC)
Mounting Pad Layout
Cathode Band
0.185 MAX.
(4.69 MAX.)
0.126 (3.20)
0.114 (2.90)
0.246 (6.22)
0.220 (5.59)
0.126 MIN.
(3.20 MIN.)
0.280 (7.11)
0.260 (6.60)
0.012 (0.305)
0.006 (0.152)
0.103 (2.62)
0.079 (2.06)
0.060 MIN.
(1.52 MIN.)
0.320 REF
0.060 (1.52)
0.030 (0.76)
0.008 (0.2)
0 (0)
0.320 (8.13)
0.305 (7.75)
Document Number 84648
17-Oct-05
www.vishay.com
3
Legal Disclaimer Notice
Vishay
Notice
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc.,
or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
Document Number: 91000
Revision: 08-Apr-05
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