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NLAS4501
Single SPST Analog Switch
The NLAS4501 is an analog switch manufactured in sub-micron
silicon-gate CMOS technology. It achieves very low R
ON
while
maintaining extremely low power dissipation. The device is a bilateral
switch suitable for switching either analog or digital signals, which may
vary from zero to full supply voltage.
The NLAS4501 is pin-for-pin compatible with the MAX4501. The
NLAS4501 can be used as a direct replacement for the MAX4501 in all
2.0 V to 5.5 V applications where a R
ON
performance improvement
is required.
The Enable pin is compatible with standard CMOS outputs when
supply voltage is nominal 5.0 Volts. It is also over-voltage tolerant,
making it a very useful logic level translator.
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MARKING
DIAGRAMS
A2
d
SC70-5/SC-88A/SOT-353
DF SUFFIX
CASE 419A
•
Guaranteed R
ON
of 32
W
at 5.5 V
•
Low Power Dissipation: I
CC
= 2
mA
•
Provides Voltage translation for many different voltage levels
3.3 to 5.0 V, Enable pin may go as high as +5.5 Volts
1.8 to 3.3 V
1.8 to 2.5 V
•
Improved version of MAX4501 (at any voltage between 2 and 5.5 Volts)
5
1
SOT23-5/TSOP-5/SC59-5
DT SUFFIX
CASE 483
d = Date Code
5
A2
d
1
•
Chip Complexity: FETs 11
•
Pb-Free Packages are Available
COM
1
5
V
CC
1
PIN ASSIGNMENT
COM
NO
GND
ENABLE
V
CC
2
3
4
NO
2
GND
3
4
ENABLE
5
FUNCTION TABLE
Figure 1. Pinout
(Top View)
On/Off Enable Input
L
H
State of Analog Switch
Off
On
ORDERING INFORMATION
See detailed ordering and shipping information on page 7 of
this data sheet.
©
Semiconductor Components Industries, LLC, 2007
1
October, 2007 - Rev. 5
Publication Order Number:
NLAS4501/D
NLAS4501
MAXIMUM RATINGS
Symbol
V
CC
V
IN
V
IS
I
IK
T
STG
T
L
T
J
q
JA
P
D
MSL
F
R
V
ESD
Positive DC Supply Voltage
Digital Input Voltage (Enable)
Analog Output Voltage (V
NO
or V
COM
)
DC Current, Into or Out of Any Pin
Storage Temperature Range
Lead Temperature, 1 mm from Case for 10 Seconds
Junction Temperature under Bias
Thermal Resistance
Power Dissipation in Still Air at 85°C
Moisture Sensitivity
Flammability Rating
ESD Withstand Voltage
Oxygen Index: 30% - 35%
Human Body Model (Note 2)
Machine Model (Note 3)
Charged Device Model (Note 4)
Above V
CC
and Below GND at 85°C (Note 5)
SC70-5/SC-88A (Note 1)
TSOP-5
SC70-5/SC-88A
TSOP-5
Parameter
Value
*0.5
to
)7.0
*0.5
to
)7.0
*0.5
to V
CC
)0.5
$20
*65
to
)150
260
)150
350
230
150
200
Level 1
UL-94-VO (0.125 in)
> 2000
> 100
N/A
$300
V
Unit
V
V
V
mA
°C
°C
°C
°C/W
mW
I
Latch-Up
Latch-Up Performance
mA
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. Measured with minimum pad spacing on an FR4 board, using 10 mm-by-1 inch, 2-ounce copper trace with no air flow.
2. Tested to EIA/JESD22-A114-A.
3. Tested to EIA/JESD22-A115-A.
4. Tested to JESD22-C101-A.
5. Tested to EIA/JESD78.
RECOMMENDED OPERATING CONDITIONS
Symbol
V
CC
V
IN
V
IO
V
IS
T
A
t
r
, t
f
Positive DC Supply Voltage
Digital Input Voltage (Enable)
Static or Dynamic Voltage Across an Off Switch
Analog Input Voltage (NO, COM)
Operating Temperature Range, All Package Types
Input Rise or Fall Time,
(Enable Input)
NORMALIZED FAILURE RATE
V
cc
= 3.3 V + 0.3 V
V
cc
= 5.0 V + 0.5 V
Characteristics
Min
2.0
GND
GND
GND
-55
0
0
Max
5.5
5.5
V
CC
V
CC
+125
100
20
Unit
V
V
V
V
°C
ns/V
DEVICE JUNCTION TEMPERATURE VERSUS TIME
TO 0.1% BOND FAILURES
Junction
Temperature
5C
80
90
100
110
120
130
140
Time, Hours
1,032,200
419,300
178,700
79,600
37,000
17,800
8,900
Time, Years
117.8
47.9
20.4
9.4
4.2
2.0
1.0
FAILURE RATE OF PLASTIC = CERAMIC
UNTIL INTERMETALLICS OCCUR
T
J
= 130°C
T
J
= 120°C
T
J
= 100°C
T
J
= 110°C
T
J
= 90°C
T
J
= 80°C
100
TIME, YEARS
1
1
10
1000
Figure 2. Failure Rate vs. Time Junction Temperature
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2
NLAS4501
DC CHARACTERISTICS - Digital Section
(Voltages Referenced to GND)
-405C to +855C
Symbol
V
IH
Parameter
Minimum High-Level Input Voltage,
Enable Inputs
Condition
V
CC
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
V
IN
= 5.5 V or GND
Enable and VIS = VCC or
GND
0 V to 5.5 V
5.5
Min
1.5
2.1
3.15
3.85
-
-
-
-
-
-
Typ
-
-
-
-
-
-
-
-
+0.1
-
Max
-
-
-
-
0.5
0.9
1.35
1.65
+1.0
1.0
Unit
V
V
IL
Maximum Low-Level Input Voltage,
Enable Inputs
V
I
IN
I
CC
Maximum Input Leakage Current, En‐
able Inputs
Maximum Quiescent Supply Current
(per package)
mA
mA
DC ELECTRICAL CHARACTERISTICS - Analog Section
-405C to +855C
Symbol
R
ON
Parameter
Maximum ON Resistance
(Figures 8 - 12)
Condition
V
IN
= V
IH
V
IS
= V
CC
to GND
I
Is
I = <10.0mA
V
IN
= V
IH
I
Is
I = <10.0mA
V
IS
= 1V, 2V, 3.5V
V
IN
= V
IL
V
NO
= 1.0 V, V
COM
= 4.5 V
or
V
COM
= 1.0 V and V
NO
4.5 V
V
IN
= V
IL
V
NO
= 4.5 V or 1.0 V
V
COM
= 1.0 V or 4.5 V
V
CC
3.0
4.5
5.5
4.5
Min
-
-
-
-
Typ
45
30
25
4.0
Max
50
35
25
4.0
Unit
W
R
FLAT(ON)
ON Resistance Flatness
W
I
NO(OFF)
Off Leakage Current, Pin 2
(Figure 3)
5.5
-
1.0
100
nA
I
COM(OFF)
Off Leakage Current, Pin 1
(Figure 3)
5.5
-
1.0
100
nA
AC ELECTRICAL CHARACTERISTICS
(Input t
r
= t
f
= 3.0 ns)
Guaranteed Max Limit
V
CC
Symbol
t
ON
Parameter
Turn-On Time
Test Conditions
R
L
= 300
W,
C
L
= 35 pF
(Figures 4, 5, and 13)
(V)
2.0
3.0
4.5
5.5
2.0
3.0
4.5
5.5
-55 to 255C
Min
Typ
7.0
5.0
4.5
4.5
11.0
7.0
5.0
5.0
Max
14
10
9
9
22
14
10
10
Min
<855C
Typ
Max
16
12
11
11
24
16
12
12
Min
<1255C
Typ
Max
16
12
11
11
24
16
12
12
Unit
ns
t
OFF
Turn-Off Time
R
L
= 300
W,
C
L
= 35 pF
(Figures 4, 5, and 13)
ns
Typical @ 25, V
CC
= 5.0 V
C
IN
C
NO or
C
NC
C
COM(OFF)
C
COM(ON)
Maximum Input Capacitance, Select Input
Analog I/O (switch off)
Common I/O (switch off)
Feedthrough (switch on)
8
10
10
20
pF
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3
NLAS4501
ADDITIONAL APPLICATION CHARACTERISTICS
(Voltages Referenced to GND Unless Noted)
V
CC
Symbol
BW
Parameter
Maximum On-Channel -3dB Bandwidth or
Minimum Frequency Response
Condition
V
IS
=
0 dBm
V
IS
centered between V
CC
and GND
(Figures 6 and 14)
V
IS
=
0 dBm @ 10 kHz
V
IS
centered between V
CC
and GND
(Figure 6)
f = 100 kHz; V
IS
=
1 V RMS
V
IS
centered between V
CC
and GND
(Figures 6 and 15)
V
IS =
V
CC to
GND, F
IS
= 20 kHz
t
r
= t
f
= 3 ns
R
IS
= 0
W,
C
L
= 1000 pF
Q = C
L
*
DV
OUT
(Figures 7 and 16)
F
IS
= 20 Hz to 1 MHz, R
L
= Rgen = 600
W,
C
L
= 50 pF
V
IS
= 3.0 V
PP
sine wave
V
IS
= 5.0 V
PP
sine wave
(Figure 17)
V
3.0
4.5
5.5
3.0
4.5
5.5
3.0
4.5
5.5
3.0
5.5
Limit
25°C
190
200
220
-2
-2
-2
-93
Unit
MHz
V
ONL
Maximum Feedthrough On Loss
dB
V
ISO
Off-Channel Isolation
dB
Q
Charge Injection
Enable Input to Common I/O
1.5
3.0
pC
THD
Total Harmonic Distortion
THD + Noise
3.3
5.5
0.3
0.15
%
1.00E+05
1.00E+04
1.00E+03
1.00E+02
1.00E+01
1.00E+00
1.00E-01
1.00E-02
1.00E-03
1.00E-04
1.00E-05
1.00E-06
1.00E-07
LEAKAGE (pA)
I
COM(ON)
I
COM(OFF)
I
NO(OFF)
5
25
45
65
85
105 125 145
-55 -35 -15
TEMPERATURE (°C)
Figure 3. Switch Leakage vs. Temperature
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