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1N4295

Description
10 V, SILICON, VOLTAGE REFERENCE DIODE, DO-7
CategoryDiscrete semiconductor    diode   
File Size103KB,2 Pages
ManufacturerDigitron
Websitehttp://www.digitroncorp.com
Download Datasheet Parametric View All

1N4295 Overview

10 V, SILICON, VOLTAGE REFERENCE DIODE, DO-7

1N4295 Parametric

Parameter NameAttribute value
Is it Rohs certified?incompatible
MakerDigitron
Reach Compliance Codeunknow
Shell connectionISOLATED
ConfigurationSINGLE
Diode component materialsSILICON
Diode typeZENER DIODE
Maximum dynamic impedance20 Ω
JEDEC-95 codeDO-35
JESD-30 codeO-XALF-W2
JESD-609 codee0
Number of components1
Number of terminals2
Package body materialUNSPECIFIED
Package shapeROUND
Package formLONG FORM
Peak Reflow Temperature (Celsius)NOT SPECIFIED
polarityUNIDIRECTIONAL
Maximum power dissipation0.4 W
Nominal reference voltage10 V
surface mountNO
technologyZENER
Terminal surfaceTin/Lead (Sn/Pb)
Terminal formWIRE
Terminal locationAXIAL
Maximum time at peak reflow temperatureNOT SPECIFIED
Voltage temperatureCoeff-Max1.2 mV/°C
Maximum voltage tolerance2%
Working test current10 mA
DIGITRON SEMICONDUCTORS
1N4295(A)
MAXIMUM RATING
Characteristic
Maximum zener current, steady state (T = 75°C, free air)
Maximum steady state power dissipation
75°C, free air
Derate above 75°C
Storage temperature range
Lead temperature 1/16” ± 1/32” from case for 10 s
Value
38mAdc
0.4 watts
4.0mW/°C
-65 to +175°C
230°C
TEMPERATURE COMPENSATED REFERENCE DIODES
ELECTRICAL CHARACTERISTICS
Part number
Breakdown
voltage
V
Z
Volts
1N4295
1N4295A
10.0 ± 2%
10.0 ± 1%
Test current
I
T
mAdc
10.0
10.0
Maximum
dynamic
impedance
Ohms
20
20
Temperature
coefficient
range
±%/°C
0. to 0.012
0. to 0.012
Maximum
zener current
mAdc
38
38
Maximum
power
dissipation
Watts
0.40
0.40
MECHANICAL CHARACTERISTICS
Case
Polarity
Marking
DO-35
Cathode band
Alpha numeric
144 Market Street
Kenilworth NJ 07033 USA
phone +1.908.245-7200
fax +1.908.245-0555
sales@digitroncorp.com
www.digitroncorp.com
Rev. 20121112

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