OM6508SA
OM6509SA
INSULATED GATE BIPOLAR TRANSISTOR
(IGBT) IN A HERMETIC TO-254AA PACKAGE
500 Volt, 5 And 10 Amp, N-Channel IGBT
With a Soft Recovery Diode
In A Hermetic Metal Package
FEATURES
•
•
•
•
•
•
•
•
•
Isolated Hermetic Metal Package
High Input Impedance
Low On-Voltage
High Current Capability
Fast Turn-Off
Low Conductive Losses
Available Screened To MIL-S-19500, TX, TXV And S Levels
Free Wheeling Diode
Ceramic Feedthroughs Available
DESCRIPTION
This power module includes an IGBT power transistor which features a high
impedance insulated gate and the low on-resistance characteristics of bipolar
transistor with a free wheeling diode connected across the emitter and collector.
These devices are ideally suited for motor drives, UPS converters, power supplies
and resonant power converters.
MAXIMUM RATINGS
@ 25°C Unless Specified Otherwise
PART
NUMBER
OM6508SA
OM6509SA
I
C
(Cont.)
@ 90°C, A
5
10
V
(BR)CES
V
500
500
V
CE (sat)
(Typ.)
V
2.8
2.8
T
f
(Typ.)
ns
400
400
q
JC
°C/W
3.8
3.0
P
D
W
35
42
T
J
°C
150
150
3.1
SCHEMATIC
Collector
MECHANICAL OUTLINE
.144 DIA.
.545
.535
.050
.040
.685
.665
.800
.790
.550
.530
1
C
2
E
3
G
Gate
PIN CONNECTION
Pin 1: Collector
Pin 2: Emitter
Pin 3: Gate
.550
.510
.045
.035
.150 TYP.
.260
.249
.005
Emitter
.150 TYP.
PACKAGE OPTIONS
MOD PAK
Z-TAB
6 PIN SIP
Standard Products are supplied with glass feedthroughs. For ceramic feedthroughs, add the letter “C” to the part number. Example - OMXXXXCSA.
IGBTs are also available in Z-Tab, dual and quad pak styles - Please call the factory for more information.
4 11 R2
Supersedes 2 07 R1
3.1 - 147
3.1
PRELIMINARY DATA: OM6509SA
IGBT CHARACTERISTICS
Min. Typ. Max. Units Test Conditions
500
0.25
1.0
±100
V
mA
mA
nA
V
CE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
I
GES
Gate Emitter Leakage
Current
Parameter - ON
V
GE(th)
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
g
fs
C
ies
C
oes
C
res
T
d(on)
t
r
t
r(Volt)
t
f
t
cross
E
off
V
f
I
r
t
rr
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Off Voltage Rise Time
Fall Time
Cross-Over Time
Turn-Off Losses
Maximum Forward Voltage
Maximum Reverse Current
Reverse Recovery Time
2.0
260
50
20
37
150
.35
.81
1.2
.95
1.5
1.4
150
1.5
35
S
pF
pF
pF
nS
nS
µS
µS
µS
mJ
V
V
µA
mA
nS
I
F
= 8 A, T
C
= 25°C
I
F
= 8 A, T
C
= 150°C
V
R
= 600 V, T
C
= 25°C
V
R
= 480 V, T
C
= 125°C
I
F
= 1 A, d
i
/ d
t
= -15 A µ/S
V
R
= 30 V, T
j
= 25°C
t
rr
Note 1: Limited by diode I
r
characteristic.
Reverse Recovery Time
I
r
Maximum Reverse Current
V
CE
= 20 V, I
C
= 5 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
V
CC
= 400 V, I
C
= 5 A
V
GE
= 15 V, R
g
= 47
V
CEclamp
= 400 V, I
C
= 5 A
V
GE
= 15 V, R
g
= 100
L = 0.1 mH, T
j
= 100°C
2.8
3.0
V
2.0
3.0
4.0
V
V
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 15 V, I
C
= 5 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 5 A
T
C
= 100°C
g
fs
C
ies
C
oes
C
res
T
d(on)
T
r
T
d(off)
T
f
T
d(off)
t
f
t
cross
E
off
V
f
V
CE(sat)
Collector Emitter
V
GE
= ±20 V
V
CE
= 0 V
V
GE(th)
I
GES
Gate Emitter Leakage
Current
Parameter - ON
Gate Threshold Voltage
Saturation Voltage
V
CE(sat)
Collector Emitter
Saturation Voltage
Dynamic
Forward Transductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-Off Delay Time
Fall Time
Cross-Over Time
Turn-Off Losses
Maximum Forward Voltage
2.5
950
140
80
150
1000
700
1500
1.2
1.5
2.0
4.0
1.4
1.5
500
3.0
35
S
pF
pF
pF
nS
nS
nS
nS
µS
µS
µS
mJ
V
V
µA
mA
nS
I
F
= 16 A, T
C
= 25°C
I
F
= 16 A, T
C
= 150°C
V
R
= 600 V, T
C
= 25°C
V
R
= 480 V, T
C
= 125°C
I
F
= 1 A, d
i
/ d
t
= -15 A µ/S
V
R
= 30 V, T
j
= 25°C
Note 1: Limited by diode I
r
characteristic.
V
CEclamp
= 350 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 100
L = 180 µH, T
j
= 100°C
V
CC
= 400 V, I
C
= 10 A
V
GE
= 15 V, R
g
= 100
V
CE
= 20 V, I
C
= 10 A
V
GE
= 0
V
CE
= 25 V
f = 1 mHz
2.8
3.0
V
2.0
3.0
4.0
2.7
V
V
V
CE
= V
GE
, I
C
= 250 µA
V
GE
= 15 V, I
C
= 10 A
T
C
= 25°C
V
GE
= 15 V, I
C
= 10 A
T
C
= 100°C
V
CE(sat)
Collector Emitter
±100
nA
I
CES
Parameter - OFF
(see Note 1)
V
(BR)CES
Collector Emitter
Breakdown Voltage
Zero Gate Voltage
Drain Current
0.25
1.0
mA
mA
Min. Typ. Max. Units Test Conditions
500
V
V
CE
= 0
I
C
= 250 µA
V
CE
= Max. Rat., V
GE
= 0
V
CE
= 0.8 Max. Rat., V
GE
= 0
T
C
= 125°C
V
GE
= ±20 V
V
CE
= 0 V
OM6508SA - OM6509SA
PRELIMINARY DATA: OM6508SA
IGBT CHARACTERISTICS
Parameter - OFF
(see Note 1)
V
(BR)CES
Collector Emitter
Breakdown Voltage
I
CES
Zero Gate Voltage
Drain Current
205 Crawford Street, Leominster, MA 01453 USA (508) 534-5776 FAX (508) 537-4246
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